Download or read book Two dimensional Submicron Semiconductor Device TCAD by Hydrodynamic and Numerical Boltzmann Simulation written by Wenchao Liang and published by . This book was released on 1996 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current and Next Generation TCAD written by Chien-Hwa Chang and published by . This book was released on 1999 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Multi band and Two dimensional Submicron Semiconductor Device Modeling by Direct Solution to the Boltzmann Transport Equation written by Yu-Jen Wu and published by . This book was released on 1994 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simulation and Modeling of Submicron Semiconductor Devices by a New Hydrodynamic Method written by Qi Lin (Ph. D.) and published by . This book was released on 1994 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Two dimensional Numerical Simulation of Semiconductor Devices written by Craig Harlan Price and published by . This book was released on 1982 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two-dimensional numerical simulation is a necessary tool for modern semiconductor device design. Analytical models and judicious application of one-dimensional simulation cannot accurately represent the highly two-dimensional impurity profiles and structures of VLSI devices. Moreover, the allowable device structures and bias conditions of existing two-dimensional simulation programs are too restrictive to provide the necessary design information. A two-dimensional numerical simulation program, PISCES, has been written in order to study various aspects of device simulation. The program uses vectorized LU decomposition to alternately solve Poison's equation and the electron current continuity equation (Gummels method). The program is extremely flexible and useful in evaluating two-dimensional simulation concerns such as grid allocation, boundary conditions, convergence characteristics and physical models. (Author).

Download or read book 2D Semiconductor Device Simulations by WENO Boltzmann Schemes Efficiency Boundary Conditions and Comparison to Monte Carlo Methods written by and published by . This book was released on 2006 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: We develop and demonstrate the capability of a high order accurate finite difference weighted essentially non-oscillatory (WENO) solver for the direct numerical simulation of transients for a two space dimensional Boltzmann transport equation (BTE) coupled with the Poisson equation modeling semiconductor devices such as the MESFET and MOSFET. We compare the simulation results with those obtained by a direct simulation Monte Carlo (DSMC) solver for the same geometry. The main goal for this work is to benchmark and clarify the implementation of boundary conditions for both, deterministic and Monte Carlo numerical schemes modeling these devices, to explain the boundary singularities for both the electric field and mean velocities associated to the solution of the transport equation, and to demonstrate the overall excellent behavior of the deterministic code through the good agreement between the Monte Carlo results and the coarse grid results of the deterministic WENO-BTE scheme.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1997 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Two dimensional Numerical Simulation of Semiconductor Devices Using Finite difference Method written by Milind R. Gokhale and published by . This book was released on 1992 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Download or read book Numerical Simulation of Semiconductor Devices written by Ansgar Jüngel and published by . This book was released on 1998 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Download or read book Nuclear Electronics with Quantum Cryogenic Detectors written by Vladimir Polushkin and published by John Wiley & Sons. This book was released on 2022-08-08 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: NUCLEAR ELECTRONICS WITH QUANTUM CRYOGENIC DETECTORS An ideal, comprehensive reference on quantum cryogenic detector instrumentation for the semiconductor and nuclear electronics industries Quantum nuclear electronics is an important scientific and technological field that overviews the development of the most advanced analytical instrumentation. This instrumentation covers a broad range of applications such as astrophysics, fundamental nuclear research facilities, chemical nano-spectroscopy laboratories, remote sensing, security systems, forensic investigations, and more. In the years since the first edition of this popular resource, the discipline has developed from demonstrating the unprecedented energy resolving power of individual devices to building large frame cameras with hundreds of thousands of pixel arrays capable of measuring and processing massive information flow. Building upon its first edition, the second edition of Nuclear Electronics with Quantum Cryogenic Detectors reflects the latest advances by focusing on novel microwave kinetic inductance detection devices (MKIDs), the microwave superconducting quantum interferometers (MSQUIDs) extending by orders of magnitude the scalability of cryogenic detectors implementing newly developed multiplexing techniques and decoding algorithms. More, it reflects on the interaction of quantum cryogenic detectors—which in turn can be paired with semiconductor large frame cameras to provide a broad picture of a sky or chemical sample—and quantum devices, making this second edition of Nuclear Electronics a one-stop reference for the combined technologies. The book also provides an overview of latest developments in front-end electronics, signal processing channels, and cryogenics—all components of quantum spectroscopic systems—and provides guidance on the design and applications of the future quantum cryogenic ultra-high-resolution spectrometers. Nuclear Electronics with Quantum Cryogenic Detectors readers will also find: Fully revised material from the first edition relating to cryogenic requirements Brand new chapters on semiconductor radiation sensors, cooling and magnetic shielding for cryogenic detector systems; front-end readout electronic circuits for quantum cryogenic detectors; energy resolution of quantum cryogenic spectrometers; and applications of spectrometers based on cryogenic detectors A number of brand-new chapters dedicated to applications using MSQUID multiplexing technique, an area that will dominate the cryogenic detector field in the next decades Nuclear Electronics with Quantum Cryogenic Detectors provides a comprehensive overview of the entire discipline for researchers, industrial engineers, and graduate students involved in the development of high-precision nuclear measurements, nuclear analytical instrumentation, and advanced superconductor primary sensors. It is also a helpful resource for electrical and electronic engineers and physicists in the nuclear industry, as well as specialist researchers or professionals working in cryogenics applications like biomagnetism, quantum computing, gravitation measurement, and more.

Download or read book 3D TCAD Simulation for Semiconductor Processes Devices and Optoelectronics written by Simon Li and published by Springer Science & Business Media. This book was released on 2011-10-01 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 1997 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Tunnel Field effect Transistors TFET written by Jagadesh Kumar Mamidala and published by John Wiley & Sons. This book was released on 2016-09-27 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.

Download or read book Computational Electronics written by Karl Hess and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.