Download or read book Two Dimensional Numerical Simulation of a Non isothermal GaAs MESFET written by Angela A. Lin and published by . This book was released on 1992 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low thermal conductivity of gallium arsenide compared to silicon results in self-heating effects in GaAs MESFETs that limit the electrical performance of such devices for high power applications. To date, analytical thermal models of self heating in GaAs MESFETs are based on the assumption of a uniformly heated channel. This thesis presents a two dimensional analysis of the electrothermal effect of this device based on the two dimensional power density distribution in the channel under various bias conditions. The numerical simulation is performed using the finite difference technique. The results of the simulation of an isothermal MESFET without heat effects is compared with various one dimensional analytical models in the literature. Electro thermal effects into the two-dimensional isothermal MESFET model allowed close examination of the temperature profile within the MESFET. The large gradient in power distribution results in a localized heat source within the channel which increases the overall channel temperature, which shows that the assumption of a uniformly heated channel is erroneous, and may lead to an underestimation of the maximum channel temperature.
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 38 (thesis year 1993) a total of 13,787 thesis titles from 22 Canadian and 164 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 38 reports theses submitted in 1993, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Download or read book Two dimensional Numerical Modeling of Ion Implanted GaAs MESFET Devices written by Mustafa Fituri Abusaid and published by . This book was released on 1984 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Masters Theses in the Pure and Applied Sciences written by Sade H Shafer and published by Springer Science & Business Media. This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cited in Sheehy, Chen, and Hurt . Volume 38 (thesis year 1993) reports a total of 13,787 thesis titles from 22 Canadian and 164 US universities. As in previous volumes, thesis titles are arranged by discipline and by university within each discipline. Any accredited university or college with a grad
Download or read book Circular written by and published by . This book was released on 1991 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development and Experimental Verification of a Two Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFETs written by Jean-Claude Ramirez and published by . This book was released on 1988 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: The results of a combined experimental and analytical investigation of the effects of mechanical stress on DC electrical parameters, particularly threshold voltage, in MESFETs are reported. The theoretical aspect of this study involves a two-dimensional finite element simulation of the same device structure on which measurements were made. In contrast with an approximate analytical calculation reported in the literature in which the stress concentrations which occur at the gate edges were represented by concentrated line forces acting in the plane of the substrate surface, the substrate stresses and resultant piezoelectric charge distributions calculated in this study take into account the two-dimensional nature of the geometry of the gate. Accounting for the two-dimensional nature of the overlayer yields piezoelectric charge distributions that differ from those predicted using the more approximate concentrated force model. The experimental portion of this study involves measurement of DC parameters of devices during the application of external mechanical loads. These loads are intended to simulate mechanical stresses which arise during device processing. By introducing this stress without any additional thermal processing, the impact of residual stresses via the piezoelectric effect on parameters such as threshold voltage can be examined separately from other effects, such as stress enhanced diffusion. It is found that the piezoelectric effect can account for most of the anomalous shift in threshold voltage observed in real GaAs devices.
Download or read book Master s Theses Directories written by and published by . This book was released on 1992 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductors 1996 Proceedings of the Twenty Third INT Symposium on Compound Semiconductors held in St Petersburg Russia 23 27 September 1996 written by Shur and published by CRC Press. This book was released on 1997-01-01 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nonlinear Circuit Simulation and Modeling written by José Carlos Pedro and published by Cambridge University Press. This book was released on 2018-06-14 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.
Download or read book Numerical Simulation of GaAs MESFET and GaAs AlGaAsTEGFET Structur Es written by Urban Westergren and published by . This book was released on 1987 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A study of GaAs MESFET modeling by numerical simulation written by Nag Un Song and published by . This book was released on 1986 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physical Simulation a Tool for Technological Evaluation and Optimization of GaAs MESFET Devices written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. two-dimensional physical DC and small-signal simulator (MESS). Two examples are discussed, the first concerning the dose and recess optimization of an analog device, the second, the recess optimization of a MESFET series or parallel switch.
Download or read book Two dimensional Hot electron Modeling for Submicrometer Gate Length GaAs MESFET s written by Jang Jyegal and published by . This book was released on 1993 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Two dimensional Electrothermal Model for GaAs MESFETs written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new physical-based electrothermal model for GaAs MESFET is presented. The 2-D electrical model based on the accurate velocity-electric field Chang-Fetterman expression is coupled to a thermal simulator which is able to take into account the thermal dependence of GaAs thermal conductivity and the multilayer structure of a typical chip. The simulator has been compared with the results of a 3-D FDM simulator and measurements. The accuracy is to be considered satisfactory and the CAD tool can easily perform the simulation on a common PC.
Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 1996 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
