Download or read book Tunnelling in Metal insulator semiconductor Structures written by H. C. Card and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Conductance in Tunnel Metal insulator semiconductor Structures written by Albert S. Waxman and published by . This book was released on 1967 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Tunnel injection Electroluminescence and Stimulated Emission in Cadmium Sulfide Metal insulator semiconductor Structures written by Francis Jeremiah Ryan and published by . This book was released on 1978 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Bias Studies on Metal Insulator Metal and Metal Insulator Semiconductor Tunnel Junctions written by Steven Wade Depp and published by . This book was released on 1972 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunnel junctions were fabricated on the grown-oxides of both cleaved single-crystal silicon and evaporated aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and self-energy structure is observed, while at intermediate biases tunneling into interface states is identified in p-type silicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model' in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (responant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. (Author).

Download or read book Study of Laterally Gated Metal Insulator Semiconductor Tunnel Diode with Al sio2 si p Structure and Its Applications written by 廖建舜 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2006-12-13 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.

Download or read book Two state Characteristics and Transient Behavior in Metal insulator semiconductor Tunnel Diode with Structural Non uniformity written by 林家德 and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Tunnelling and Negative Resistance Phenomena in Semiconductors written by D. K. Roy and published by Elsevier. This book was released on 2014-05-09 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.

Download or read book Physics of Low Dimensional Semiconductor Structures written by Paul N. Butcher and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 597 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photon assisted Electron Tunneling in Metal insulator metal Rectenna Structures written by Shuo Sun and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum physics has had a remarkable development since the last century. We study novel metal-insulator-metal structure configurations for finding broadband and ultrafast response photodetectors and alternative choices to conventional solar cells. If two dissimilar electrodes are separated by an insulator that is sufficiently thin, electrons can tunnel through the gap region by means of quantum tunneling. Electron tunneling through the insulating gap is driven by a bias voltage or an electromagnetic field. The resulting electrical current is described using the photon-perturbation tunneling model. For the right choice of materials, the tunneling current can be asymmetric and there is a net rectified current through the insulator junction. Due to this property, the devices have been called rectennas and many experiments have been performed in the radio frequency regime. More recently rectenna experiments have been extended in the near-infrared regime. Semiconductor diodes have many imperfections such as heat problems and relatively slow response, while metal-insulator-metal devices have less heat problem issues and have response time of carriers in the order of femtoseconds, which can be faster than the period of oscillation of the electromagnetic field. We have applied the transfer matrix method and the Wentzel, Kramers, Brillouin approximation to solve the SchroÌ8dinger equation to find the electron tunneling probability and to predict the current-voltage characteristics of a metal-insulator-metal structure. This, along with the density of states, the Fermi occupation probability, and the quantum confinement effect is used to derive the dark current density for the metal-insulator-metal diode. The illuminated current-voltage characteristics is described by the photon-perturbation theory at high optical frequencies. Upon combining classical and semiclassical pictures of photodetection, a photon-perturbation tunneling model is presented, to fully uncover the interaction between electron and photon field. The electrons are excited and quantized as quasi-particles, this phenomenon is the so-called quantum effect. We validate the theory for dark current and illuminated current with experiments with the goal of calculating the current responsivities. Metal-insulator-metal Au-TiO2-Ti diodes are designed and fabricated in-house using photolithography, along with electron beam evaporation and sputter depositions. Further research is needed to develop metal-insulator-metal devices into practical solar energy harvesters.

Download or read book Physics Of Semiconductors The Proceedings Of The Xxi International Conference In 2 Volumes written by Ping Jiang and published by World Scientific. This book was released on 1993-03-31 with total page 2151 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.

Download or read book Tunneling Spectroscopy in P type Silicon written by Donald Edward Cullen and published by . This book was released on 1970 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and the second derivative of i with respect to V, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were prepared by evaporating metal contacts onto vacuum and air cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone center optical phonons and boron local-mode phonons has been observed. The optical phonon lineshapes in the most heavily doped MIS units are shown to compare well with the theoretical lineshapes in which modifications in the bulk semiconductor states arising from electron-optical phonon interactions in the semiconductor electrode have been included. Anomalous zero-bias conductance minima were observed in the tunneling characteristics of the silicon MS junctions. At least a part of this structure is attributed to intermediate state tunneling whereby electron tunnel from one electrode to the other in two steps via intermediate states localized in the depletion region of the semiconductor. The source of the remaining structure is not known. (Author).

Download or read book Impact on Metal insulator semiconductor mis Deep depletion Tunneling Current by Neighboring Coupling Effect written by 楊明翰 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book High Magnetic Fields In The Physics Of Semiconductors Proceedings Of The 12th International Conference In 2 Volumes written by Gottfried Landwehr and published by World Scientific. This book was released on 1997-04-23 with total page 1108 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains contributions presented at the 12th International Conference on High Magnetic Fields in Semiconductor Physics. In order to give an overview, 37 lecturers not only reviewed the latest results in their field, but also gave a general introduction. The rapid development of semiconductor physics and technology during the last few years has resulted in an extensive application of high magnetic fields in both fundamental and applied research; more than 160 contributed papers were presented as posters.Sixteen years after its discovery, the quantum Hall effect (QHE) is still a subject of high activity. Many new results on the fractional QHE were presented; in addition to 6 invited papers, there were 43 contributions. Another field of high activity is magneto-optics, and 49 posters were presented. Magnetotransport also turned out to be of high interest, and magnetic semiconductors played a prominent role at the conference, too.Without doubt, the availability of superconducting magnets in most laboratories contributed to the growth of semiconductor physics in high magnetic fields. Because not all experiments can be performed in fields up to 10 or 15 teslas, high magnetic field laboratories offering larger fields are indispensable. There were reports from four laboratories on present work going on at these installations.

Download or read book Principles of Electron Tunneling Spectroscopy written by E. L. Wolf and published by Oxford University Press. This book was released on 2012 with total page 617 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron tunnelling spectroscopy as a research tool has strongly advanced understanding of superconductivity. This book explains the physics and instrumentation behind the advances illustrated in beautiful images of atoms, rings of atoms and exotic states in high temperature superconductors, and summarizes the state of knowledge that has resulted.