Download or read book Transport Properties of GaAs InGaAs Double Quantum Wells and Graded InGaAs Heterostructures written by M. D. Godfrey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gaas And Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994-10-25 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Download or read book Optical and Structural Properties of InGaAs GaAs Heterostructures written by A. Y. Egorov and published by . This book was released on 1999 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strain Induced Physical Phenomena in InGaAs GaAs and InGaN GaN Heterostructures written by Hongtao Jiang and published by . This book was released on 1999 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Recombination Dynamics in InGaAs GaAs Quantum Well Heterostructures written by Seldon David Benjamin and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Optical and Structural Properties of InGaAs GaAs Quantum Wells GaN Films and ZnSe written by William Thomas Young and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies of Carrier Relaxation Recombination and Transport in InGaAs GaAs Quantum Wells and GaAs AlGaAs Nanostructures Using Spatially Spectrally and Temporally Resolved Electron Beam Probes written by Hsin-Tah Lin and published by . This book was released on 1996 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAsSb InGaAs Type II Quantum Wells for Long wavelength Lasers on GaAs Substrates written by and published by . This book was released on 2000 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 [mu]m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm2 at 1.17 [mu]m, and 2.1 kA/cm2 at 1.21 [mu]m.
Download or read book InGaAs InA1As Quantum Wells for 1 3 mu m Electro absorption Modulators on GaAs Substrates written by Lei Shen and published by . This book was released on 1997 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of InGaAs GaAs Quantum Well Structures written by Li Chen and published by . This book was released on 1993 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Interdiffusion in InGaAs GaAs Strained Quantum Wells written by W. P. Gillin and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transport Properties of the Two dimensional Electron Gas in GaAs AlGaAs Heterostructures written by Barry Jia-fu Lin and published by . This book was released on 1985 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Highly Strained InGaAs GaAs Quantum Wells in Reduced Areas and Methodology for Studying GaAs and InGaAs Buried Interfaces written by and published by . This book was released on 2009 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book On the Photoluminescence Properties of InGaAs GaAs and GaAs AlGaAs Quantum Well Structures written by Johannes Reinhardt Botha and published by . This book was released on 1995 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Strained Disordered InGaAs Based Single Quantum Wells written by Joseph Micallef and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Creation in InGaAs GaAs Multiple Quantum Wells written by Matthias Karow and published by . This book was released on 2014 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Correlations between physical properties, crystal perfection of epitaxial structures, and growth conditions under which desired properties are achieved appear as highly important for the realization and final performance of semiconductor based devices. Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature Tdep among the samples to change crystalline and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep=505 & deg;C was found for 20% In composition. The density of 60 & deg; primary and secondary dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection, as evaluated by lateral and vertical coherence lengths and diffuse scattering in reciprocal space maps. Likewise, the strength of non-radiative Shockley-Read-Hall recombination increased as deposition temperature was reduced. Elevated deposition temperature led to InGaAs decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering. High available thermal energy increased atomic surface diffusivity and resulted in growth surface instability against perturbations, manifesting in lateral layer thickness undulations. Carriers in structures grown at elevated temperature experience localization in local energy minima. InGaAs/GaAs MQW structures reveal correlation between their crystal quality and optical properties. It can be suggested that there is an optimal growth temperature range for each In composition with high crystal perfection and best physical response.
Download or read book A Study of InGaAs GaAs Quantum Dots and GaInNAs GaAs Quantum Wells for Optoelectronic Applications at 1300 Nm written by Anthony John Bennett and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
