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Book Transition Metal Defects in Silicon

Download or read book Transition Metal Defects in Silicon written by Michael Steger and published by Springer Science & Business Media. This book was released on 2013-02-26 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission. This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres’ constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties.

Book Metal Impurities in Silicon Device Fabrication

Download or read book Metal Impurities in Silicon Device Fabrication written by Klaus Graff and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

Book Photoluminescence of Transition Metals in Silicon

Download or read book Photoluminescence of Transition Metals in Silicon written by David A. Beauchaine and published by . This book was released on 1988 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical characterization of transition metals in silicon

Download or read book Electrical characterization of transition metals in silicon written by Leopold Scheffler and published by Cuvillier Verlag. This book was released on 2015-04-28 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silizium ist ein wichtiger Rohstoff unserer modernen Welt. Mikroelektronik, Sensorik und Photovoltaik sind drei wichtige Anwendungsgebiete, die aus unserem täglichen Leben heute nicht mehr wegzudenken sind. Entscheidend für all diese Anwendungen ist das Verständnis der elektrischen Eigenschaften des Materials, welche durch Defekte und Verunreinigungen beeinflusst werden. Die Übergangsmetalle sind eine wichtige Klasse von Verunreinigungen im Silizium, da sie die elektrischen Eigenschaften stark beeinflussen. Auch ist bekannt, dass Wasserstoff, welcher in vielen Prozessen in Silizium eindringen kann, mit vielen Defekten reagiert. In der vorliegenden Dissertation wird die Wechselwirkung von Wasserstoff mit den Metallen Titan, Kobalt und Nickel mit Hilfe der kapazitiven Messmethoden DLTS und MCTS untersucht. Verschiedene elektrisch aktive Metall-Wasserstoff-Komplexe können nachgewiesen werden. Auch eine Passivierung der Metalle durch Wasserstoff wird beobachtet. Neben den Reaktionen mit den Metallen wird auch eine Wechselwirkung des Wasserstoffs mit im Silizium vorhandenem Kohlenstoff untersucht. Für eine Einordnung der Ergebnisse werden diese mit dem aus der Literatur bekannten Verhalten benachbarter Elemente verglichen.

Book Metal Impurities in Silicon Device Fabrication

Download or read book Metal Impurities in Silicon Device Fabrication written by Klaus Graff and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt: This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.

Book Noble and transition metals in silicon

Download or read book Noble and transition metals in silicon written by Nguyen T. Son and published by . This book was released on 1993 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Influence of Oxygen Precipitation on Transition Metals in Silicon

Download or read book Influence of Oxygen Precipitation on Transition Metals in Silicon written by Etienne Guy Colas and published by . This book was released on 1986 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Transition Metals and Silicon

Download or read book Transition Metals and Silicon written by Benjamin Geisler and published by Cuvillier Verlag. This book was released on 2015-03-12 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present, richly illustrated book takes the reader on a tour through the field of modern spintronics, discussing key aspects such as ferromagnetic thin films, dilute magnetic semiconductors, and magnetic tunnel junctions. It demonstrates different approaches to a detailed understanding of magnetism and materials properties on the atomic scale, as required by the ongoing miniaturization of electronics. Due to their technological relevance, the focus lies on silicon and different transition metals like chromium, manganese, and iron. Among others, the following questions are addressed from the viewpoint of state-of-the-art computational physics: Is the scanning tunneling microscope capable of resolving even complex film atomic structures? How can we use its spin-sensitive form to gain insight into interactions of magnetic impurities in bulk semiconductors? Why is chromium-doped silicon especially interesting? Does one need a Seebeck coefficient to obtain spincaloric properties ab initio?

Book Efficient Methods for Preparing Silicon Compounds

Download or read book Efficient Methods for Preparing Silicon Compounds written by Herbert W Roesky and published by Academic Press. This book was released on 2016-05-12 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient Methods for Preparing Silicon Compounds is a unique and valuable handbook for chemists and students involved in advanced studies of preparative chemistry in academia and industry. Organized by the various coordination numbers (from two to six) of the central silicon atom of the reported compounds, this book provides researchers with a handy and immediate reference for any compound or properties needed in the area. Edited by a renowned expert in the field, each chapter explores a different type of compound, thoroughly illustrated with useful schemes and supplemented by additional references. Knowledgeable contributors report on a broad range of compounds on which they have published and which are already used on a broad scale or have the potential to be used in the very near future to develop a new field of research or application in silicon chemistry. Includes contributions and edits from leading experts in the field Includes detailed chemical schemes and useful references for each preparative method Organized by the coordination numbers of the central silicon atom for each compound for easy navigation Serves as a go-to primer for researchers in novel compositions of silicon matter

Book Metal Impurities in Silicon  and Germanium Based Technologies

Download or read book Metal Impurities in Silicon and Germanium Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Book Silicides  Fundamentals   Applications

Download or read book Silicides Fundamentals Applications written by Francois D'heurle and published by World Scientific. This book was released on 2000-12-18 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics.

Book Silicon Chemistry

    Book Details:
  • Author : Peter Jutzi
  • Publisher : John Wiley & Sons
  • Release : 2007-09-24
  • ISBN : 3527611215
  • Pages : 506 pages

Download or read book Silicon Chemistry written by Peter Jutzi and published by John Wiley & Sons. This book was released on 2007-09-24 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: The combined results from an international research project involving 40 interdisciplinary groups, providing the latest knowledge from the past few years. Adopting an application-oriented approach, this handy reference is a must-have for every silicon chemist, whether working in inorganic, organic, physical or polymer chemistry, materials science or physics.

Book Some Studies in Silicon transition Metal Chemistry

Download or read book Some Studies in Silicon transition Metal Chemistry written by Kuzhikalail Mathew Abraham and published by . This book was released on 1973 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Coordination Chemistry of Silicon

Download or read book Coordination Chemistry of Silicon written by Prof. Dr. Shigeyoshi Inoue and published by MDPI. This book was released on 2019-03-04 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: The chemistry of silicon has always been a field of major concern due to its proximity to carbon on the periodic table. From the molecular chemist’s viewpoint, one of the most interesting differences between carbon and silicon is their divergent coordination behavior. In fact, silicon is prone to form hyper-coordinate organosilicon complexes, and, as conveyed by reports in the literature, highly sophisticated ligand systems are required to furnish low-coordinate organosilicon complexes. Tremendous progress in experimental, as well as computational, techniques has granted synthetic access to a broad range of coordination numbers for silicon, and the scientific endeavor, which was ongoing for decades, was rewarded with landmark discoveries in the field of organosilicon chemistry. Molecular congeners of silicon(0), as well as silicon oxides, were unveiled, and the prominent group 14 metalloid proved its applicability in homogenous catalysis as a supportive ligand or even as a center of catalytic activity. This book focuses on the most recent advances in the coordination chemistry of silicon with transition metals as well as main group elements, including the stabilization of low-valent silicon species through the coordination of electron donor ligands. Therefore, this book is associated with the development of novel synthetic methodologies, structural elucidations, bonding analysis, and also possible applications in catalysis or chemical transformations using related organosilicon compounds.

Book Compounds Containing Silicon transition Metal Bonds

Download or read book Compounds Containing Silicon transition Metal Bonds written by Kenneth R. Rentmeester and published by . This book was released on 1961 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: