Download or read book Transient Numerical Study of Temperature Gradients During Sublimation Growth of SiC written by Jürgen Geiser and published by . This book was released on 2006 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Numerical Study of Termperature Gradients During Sublimation Growth of SiC written by and published by . This book was released on 2005 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using a transient mathematical heat transfer model including heat conduction, radiation, and radio frequency (RF) induction heating, we numerically investigate the time evolution of temperature gradients in axisymmetric growth apparatus during sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). Temperature gradients on the growing crystal's surface can cause defects. Here, the evolution of these gradients is studied numerically during the heating process, varying the apparatus design, namely the amount of the source powder charge as well as the size of the upper blind hole used for cooling of the seed. Our results show that a smaller upper blind hole can reduce the temperature gradients on the surface of the seed crystal without reducing the surface temperature itself.
Download or read book Transient Numerical Investigation of Induction Heating During Sublimation Growth of Silicon Carbide Single Crystals written by Olaf Klein and published by . This book was released on 2001 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials in Environmental Engineering written by Hadi Haeri and published by Walter de Gruyter GmbH & Co KG. This book was released on 2017-08-21 with total page 1609 pages. Available in PDF, EPUB and Kindle. Book excerpt: This contains selected and peer-reviewed papers from the 4th Annual International Conference on Material Science and Environmental Engineering (MSEE), December 16-18 2016, in Chengdu, China. Interactions of building materials, biomaterials, energy materials and nanomaterials with surrounding environment are discussed. With abundant case studies, it is of interests to material scientists and environmental engineers.
Download or read book Transient Numerical Simulation of Sublimation Growth of SiC Bulk Single Crystals written by Peter Philip and published by . This book was released on 2003 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Ceramic Armor VII Volume 32 Issue 5 written by Jeffrey J. Swab and published by John Wiley & Sons. This book was released on 2011-11-11 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a collection of papers from The American Ceramic Society's 35th International Conference on Advanced Ceramics and Composites, held in Daytona Beach, Florida, January 23-28, 2011. This issue includes papers presented in the Armor Ceramics Symposium on topics such as Manufacturing; High-Rate Real-Time Characterization; Microstructural Design; Nondestructive Characterization; and Phenomenology and Mechanics of Ceramics Subjected to Ballistic Impact.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide III nitrides and Related Materials written by and published by . This book was released on 1998 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties. PART 1: 1. SiC BULK GROWTH. 2. SiC EPITAXY. 2.1 Homoepitaxial Growth. 2.2 Heteroepitaxial Growth. 3. THEORY. 4. CHARACTERISATION OF SiC. 4.1 Surfaces and Interfaces. 4.2 Structural Characterisation. 4.3 Optical Characterisation. 4.4 Electrical Characterisation. 4.5 Magnetic Resonance Characterisation. 4.6 Thermal and Mechanical Properties. 5. MEASUREMENT TECHNIQUES. PART 2: 6. PROCESSING OF SiC. 6.1 Doping and Implantation. 6.2 Contacts and Etching. 6.3 Dielectrics. 6.4 Micromachining. 7. SiC DEVICES. 7.1 Surveys. 7.2 Unipolar Devices. 7.3 Bipolar Devices. 7.4 Sensors. 8. GROWTH OF III-NITRIDES. 9. CHARACTERISATION OF III-NITRIDES. 9.1 Structural Characterisation. 9.2 Optical Characterisation. 9.3 Electrical Characterisation. 10. PROCESSING OF III-NITRIDES. 11. III-NITRIDE DEVICES. 12. RELATED MATERIALS.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1969 with total page 1108 pages. Available in PDF, EPUB and Kindle. Book excerpt: NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deutsche Nationalbibliografie written by Die deutsche Nationalbibliothek and published by . This book was released on 2007 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Mechanical Properties of Ceramics written by John B. Wachtman and published by John Wiley & Sons. This book was released on 2009-08-13 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Self-Contained Treatment of the Theory and Practical Applications of Ceramic Materials When failure occurs in ceramic materials, it is often catastrophic, instantaneous, and total. Now in its Second Edition, this important book arms readers with a thorough and accurate understanding of the causes of these failures and how to design ceramics for failure avoidance. It systematically covers: Stress and strain Types of mechanical behavior Strength of defect-free solids Linear elastic fracture mechanics Measurements of elasticity, strength, and fracture toughness Subcritical crack propagation Toughening mechanisms in ceramics Effects of microstructure on toughness and strength Cyclic fatigue of ceramics Thermal stress and thermal shock in ceramics Fractography Dislocation and plastic deformation in ceramics Creep and superplasticity of ceramics Creep rupture at high temperatures and safe life design Hardness and wear And more While maintaining the first edition's reputation for being an indispensable professional resource, this new edition has been updated with sketches, explanations, figures, tables, summaries, and problem sets to make it more student-friendly as a textbook in undergraduate and graduate courses on the mechanical properties of ceramics.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
