Download or read book TID Characterization of High Frequency RF Circuits in Nano CMOS Technologies written by Srikanth Jagannathan and published by . This book was released on 2013 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CMOS RF Modeling Characterization and Applications written by M. Jamal Deen and published by World Scientific. This book was released on 2002 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Download or read book Radio Frequency Integrated Circuits and Technologies written by Frank Ellinger and published by Springer Science & Business Media. This book was released on 2008-08-14 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: The striking feature of this book is its coverage of the upper GHz domain. However, the latest technologies, applications and broad range of circuits are discussed. Design examples are provided including cookbook-like optimization strategies. This state-of-the-art book is valuable for researchers as well as for engineers in industry. Furthermore, the book serves as fruitful basis for lectures in the area of IC design.
Download or read book Millimetre wave Device Characterization for Nano CMOS IC Design microform written by Mangan, Alain Marc and published by Library and Archives Canada = Bibliothèque et Archives Canada. This book was released on 2005 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the 90-nm node, silicon technologies have reached a point where the transistor fT and f MAX simultaneously exceed 150 GHz, with a 1.2 V supply. With low fabrication costs for high volumes of circuits, RF-CMOS technologies are ideally suited to realize exciting new high bandwidth consumer products that operate in the mm-wave regime. Before this can happen, models of both active and passive devices will require a high degree of accuracy from DC, all the way up to mm-wave frequencies. This thesis presents new techniques that help leverage the power of measurements to characterize and model devices of nano-CMOS technologies well into the mm-wave regime. In particular, two new de-embedding techniques are devised in order to improve measurement accuracy, and reduce wafer area consumption. Moreover, the measured characteristics of various microstrip lines, varactors, and n-MOSFETs fabricated in a 90-nm RF-CMOS technology are analyzed in order to identify optimal geometries for high frequency design. An extraction methodology for a scalable physical model of accumulation-mode MOS varactors is also included.
Download or read book The Design of CMOS Radio Frequency Integrated Circuits written by Thomas H. Lee and published by Cambridge University Press. This book was released on 1998-01-13 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive and insightful book sets out in detail how to design gigahertz-speed radio-frequency integrated circuits in CMOS technology. Starting with a history of radio to establish a foundation and to differentiate the discrete era from the IC age, the book reviews passive RLC networks, the characteristics of IC components and transistor models. The design of high-frequency tuned and broadband amplifiers follows, with an emphasis on approximate methods that provide important design insight as a complement to simulation results. Key RF building blocks, such as low-noise amplifiers (LNAs), mixers, power amplifiers, high spectral purity oscillators and frequency synthesizers are studied in detail. The book closes with an examination of transceiver architectures. With over 350 circuit diagrams and illustrations, and many homework problems, this will be an ideal textbook for anyone taking advanced undergraduate or graduate courses in RF electronics, as well as a useful reference for practising engineers.
Download or read book MOSFET RF Characterization Using Bulk and SOI CMOS Technologies written by Jan Saijets and published by . This book was released on 2007 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy. Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.
Download or read book Fundamentals of High Frequency CMOS Analog Integrated Circuits written by Duran Leblebici and published by Springer. This book was released on 2022-03-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is ideal for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. It is aimed at electronics engineering students and IC design engineers in the field, wishing to gain a deeper understanding of circuit fundamentals, and to go beyond the widely-used automated design procedures. The authors employ a design-centric approach, in order to bridge the gap between fundamental analog electronic circuits textbooks and more advanced RF IC design texts. The structure and operation of the building blocks of high-frequency ICs are introduced in a systematic manner, with an emphasis on transistor-level operation, the influence of device characteristics and parasitic effects, and input–output behavior in the time and frequency domains. This second edition has been revised extensively, to expand some of the key topics, to clarify the explanations, and to provide extensive design examples and problems. New material has been added for basic coverage of core topics, such as wide-band LNAs, noise feedback concept and noise cancellation, inductive-compensated band widening techniques for flat-gain or flat-delay characteristics, and basic communication system concepts that exploit the convergence and co-existence of Analog and Digital building blocks in RF systems. A new chapter (Chapter 5) has been added on Noise and Linearity, addressing key topics in a comprehensive manner. All of the other chapters have also been revised and largely re-written, with the addition of numerous, solved design examples and exercise problems.
Download or read book Design and Characterization of Silicon CMOS Devices for Radio frequency Integrated Circuits written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: HKUST Call Number: Thesis ELEC 2001 LamS.
Download or read book Techniques for Enhancing the Performance of Bulk driven Circuits in Nano scale CMOS Technology written by Haoran Yu and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design of Low voltage and Low distortion CMOS RF Integrated Circuits Using Volterra Analysis written by Shan He and published by . This book was released on 2011 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog circuits that operate with low voltage supply headroom generally suffer from poor linearity performance, poor noise performance, etc. However, with the aggressive scaling of the supply voltage in Complementary Metal Oxide Semiconductor (CMOS) technology and the advent of System-On-Chip (SOC) technologies, it is inevitable that these circuits are to be operated with low voltage supply headroom. In this thesis, three low-voltage Integrated Circuits (IC) for Radio Frequency (RF) communication systems are presented. They are all designed and fabricated with 0.13um CMOS technology. Their experimental verifications are performed on die with Coplanar Waveguide (CPW) probes. The first circuit is an ultra-low-voltage low-power single-balanced $\times$2 subharmonic down-conversion mixer. A linearity analysis for the inductive source degenerated transconductor of the mixer is provided using Volterra series. This analysis provides a guideline for designing the inductive source degenerated transconductor with high linearity at the RF frequency of 8.6 GHz. The circuit achieves a conversion gain of 6.0 dB and an $IIP_{3}$ of -8.0 dBm at the RF frequency of 8.6 GHz while consuming 0.6 mW of DC power with the supply voltage of 0.6 V. The second circuit is a low-voltage low-noise wideband down-conversion mixing frontend that consists of a Low-Noise Amplifier (LNA) and a passive mixer. The linearity analysis for the LNA, which is used as a transconductor, is analyzed using Volterra series. Through this analysis, the trade-off between noise cancellation and distortion cancellation is discussed. A simple distortion cancellation scheme that decouples the design guidelines from this trade-off is proposed. From 300 MHz to 1.2 GHz, the circuit achieves a conversion gain of 8.8 dB and a maximum $IIP_{3}$ of -0.8 dBm, while having less than 4.8 dB noise figure. The overall circuit consumes 24.0 mW of power with the supply voltage of 0.9 V. The third circuit is a low-voltage low-noise wideband active balun. The linearity analysis for the active balun circuit is also analyzed using Volterra series. The design consideration involving noise cancellation and distortion cancellation is discussed through this analysis. A simple distortion cancellation scheme that aims at improving the linearity performance of the circuit with low-voltage supply constraint is proposed. From 300 MHz to 2.4 GHz, the circuit achieves an average voltage gain of 15.5 dB and a maximum $IIP_{3}$ of -1.7 dBm, while having less than 4.0 dB noise figure from 500 MHz to 3.0 GHz. The overall circuit consumes 15.8 mW of power with the supply voltage of 0.9 V.
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Download or read book Radiation Tolerant Electronics Volume II written by Paul LeRoux and published by Mdpi AG. This book was released on 2023-01-16 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade. After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects.
Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book Nyquist AD Converters Sensor Interfaces and Robustness written by Arthur H.M. van Roermund and published by Springer Science & Business Media. This book was released on 2012-11-26 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on the 18 presentations during the 21st workshop on Advances in Analog Circuit Design. Expert designers provide readers with information about a variety of topics at the frontier of analog circuit design, including Nyquist analog-to-digital converters, capacitive sensor interfaces, reliability, variability, and connectivity. This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.
Download or read book Particle Detectors written by Hermann Kolanoski and published by Oxford University Press. This book was released on 2020-06-30 with total page 949 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the fundamentals of particle detectors as well as their applications. Detector development is an important part of nuclear, particle and astroparticle physics, and through its applications in radiation imaging, it paves the way for advancements in the biomedical and materials sciences. Knowledge in detector physics is one of the required skills of an experimental physicist in these fields. The breadth of knowledge required for detector development comprises many areas of physics and technology, starting from interactions of particles with matter, gas- and solid-state physics, over charge transport and signal development, to elements of microelectronics. The book's aim is to describe the fundamentals of detectors and their different variants and implementations as clearly as possible and as deeply as needed for a thorough understanding. While this comprehensive opus contains all the materials taught in experimental particle physics lectures or modules addressing detector physics at the Master's level, it also goes well beyond these basic requirements. This is an essential text for students who want to deepen their knowledge in this field. It is also a highly useful guide for lecturers and scientists looking for a starting point for detector development work.
