Download or read book Thermal Transport in III V Semiconductors and Devices written by Adam Paul Christensen and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: It is the objective of this work to focus on heat dissipation in gallium nitride based solid-state logic devices as well as optoelectronic devices, a major technical challenge. With a direct band gap that is tunable through alloying between 0.7-3.8 eV, this material provides an enabling technology for power generation, telecommunications, power electronics, and advanced lighting sources. Previously, advances in these areas were limited by the availability of high quality material and growth methods, resulting in high dislocation densities and impurities. Within the last 40 years improvements in epitaxial growth methods such as lateral epitaxial overgrowth (LEO), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), and metal organic chemical vapor deposition (MOCVD), has enabled electron mobilities greater than 1600 cm2V/s, with dislocation densities less than 109/cm2. Increases in device performance with improved materials have now been associated with an increase in power dissipation (>1kW/cm2) that is limiting further development. In the following work thermophysical material of III-V semiconducting thin films and associated substrates are presented. Numerical modeling coupled with optical (micro-IR imaging and micro-Raman Spectroscopy) methods was utilized in order to study the heat carrier motion and the temperature distribution in an operating device. Results from temperature mapping experiments led to an analysis for design of next generation advancements in electronics packaging.

Download or read book Nanoscale Electronic and Thermal Transport Properties in III V RE V Nanostructures written by Keun Woo Park and published by . This book was released on 2013 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The incorporation of rare earth-V (RE-V) semimetallic nanoparticles embedded in III-V compound semiconductors is of great interest for applications in solid-state devices including multijunction tandem solar cells, thermoelectric devices, and fast photoconductors for terahertz radiation sources and receivers. With regard to those nanoparticle roles in device applications and material itself, electrical and thermal properties of embedded RE-V nanoparticles, including nanoscale morphology, electronic structure, and electrical and thermal conductivity of such nanoparticles are essential to be understood to engineer their properties to optimize their influence on device performance. To understand embedded RE-V semimetallic nanostructures in III-V compound semiconductors, nanoscale characterization tools are essential for analysis their properties incorporated in compound semiconductors. In this dissertation, we used atomic force microscopy (AFM) with other secondary detection tools to investigate nanoscale material properties of semimetallic RE-V and GaAs heterostructures, grown by molecular beam epitaxy. We used scanning capacitance microscopy and conductive AFM techniques to understand electronic and electrical properties of ErAs/GaAs heterostructures. For the electrical properties, this thesis investigates details of statistical analysis of scanning capacitance and local conductivity images contrast to provide insights into (i) nanoparticle structure at length scales smaller than the nominal spatial resolution of the scanned probe measurement, and (ii) both lateral and vertical nanoparticle morphology at nanometer to atomic length scales, and their influence on electrical conductivity. To understand thermal properties of ErAs nanoparticles, in-plane and cross-sectional plane of ErAs/GaAs superlattice structure were investigated with a scanning probe microscopy technique implemented with 3[omega] method for thermal measurement. By performing detailed numerical modeling of thermal transport between thermal probe tip and employed samples, and estimation of additional phonon scattering induced by ErAs nanoparticles, we could understand influences of ErAs nanoparticles on the host GaAs thermal conductivity. Investigation of ErAs semimetallic nanostructure embedded in GaAs matrix with scanned probe microscopy provided detailed understanding of their electronic, electrical and thermal properties. In addition, this dissertation also demonstrates that an atomic force microscope with secondary detection techniques is promising apparatus to understand and investigate intrinsic properties of nanostructure materials, nanoscale charge transports, when the system is combined with detailed modeling and simulations.

Download or read book Electronic Transport in III V Semiconductors and Semiconductor Devices written by D. J. Newson and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Download or read book Properties of Group IV III V and II VI Semiconductors written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2005-06-14 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide. The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed. The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive. The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.

Download or read book Hot Electron Transport in Nanometer Scale Graded Ternary III V Semiconductor Devices written by Abdul-Azeez Sulaiman Al-Omar and published by . This book was released on 1988 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physical Properties of III V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Simulation of Thermal Transport in Semiconductor Nanostructures written by Song Mei and published by . This book was released on 2017 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the advancement of nanofabrication techniques, the sizes of semiconductor electronic and optoelectronic devices keep decreasing while the operating speeds keep increasing. High-speed operation leads to more heat generation and puts more thermal stress on the devices. Since the heat conduction in semiconductors is dominated by the lattice (i.e., phonons), understanding phonon transport in nanostructures is essential to addressing and alleviating the thermal-stress problem in these modern devices. In addition to the increased thermal stress, the advanced techniques that have allowed for the shrinking of the devices routinely rely on heterostructuring, doping, alloying, and the growth of intentionally strained layers to achieve the desired electronic and optical properties. These introduce impediments to phonon transport such as boundaries, interfaces, point defects (alloy atoms or dopants), and strain. Phonon transport is strongly affected by this nanoscale disorder. This dissertation examines how different types of disorder interact with phonons and degrade phonon transport. First, we study thermal transport in graphene nanoribbons (GNRs). GNRs are quasi-one-dimensional (quasi-1D) systems where the edges (boundaries) play an important role in reducing thermal conductivity. Additionally, the thermal transport in GNRs is anisotropic and depend on the GNR's chirality (GNR orientation and edge termination). We use phonon Monte Carlo (PMC) with full phonon dispersions to describe two highly-symmetric types of GNRs: the armchair GNR (AGNR) and the zigzag GNR (ZGNR). PMC tracks phonon in real space and we can explicitly include non-trivial edge structures. Moreover, the relatively low computational burden of PMC allows us to simulate samples up to 100 $\mu$m in length and predict an upper limit for thermal conductivity in graphene. We then investigate the thermal conductivity in III-V superlattices (SLs). SLs consist of alternating thin layers of different materials and III-V SLs are widely used in nanoscale thermoelectric and optoelectronic devices. The key feature in SLs is that it contains many interfaces, which dictates thermal transport. As III-V SLs are often fabricated using well-controlled techniques and have high-quality interfaces, we develop a model with only one free parameter---the effective rms roughness of the interfaces---to describe its twofold influence: reducing the in-plane layer thermal conductivity and introducing thermal boundary resistance (TBR) in the cross-plane direction. Both the calculated in-plane and cross-plane thermal conductivity of SLs agree with a number of different experiments. Finally, we study thermal conductivity of ternary III-V alloys. In modern optoelectronic devices, ternary III-V alloys are used more often than binary compounds because one can use composition engineering to achieve different effective masses, electron/hole barrier heights, and strain levels. Ternary alloys are usually treated under the virtual crystal approximation (VCA) where cation atoms are assumed to be randomly distributed and possess an averaged mass. This assumption is challenged by a discrepancy between different experiments, as well as the discrepancy between experiments and calculations. We use molecular dynamics (MD) to study the ternary alloy system as both atom masses and atom locations are explicitly tracked in MD. We discover that the thermal conductivity is determined by a competition between mass-difference scattering and the short-range ordering of the cations.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Semiconductor Alloys written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2009-03-12 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

Download or read book Low Temperature Electron Transport in III V Semiconductor Devices written by Daniel Mace and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rapid Thermal Processing for Future Semiconductor Devices written by H. Fukuda and published by Elsevier. This book was released on 2003-04-02 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

Download or read book III V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Download or read book Topics in Growth and Device Processing of III V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Download or read book Recent Trends in Thermoelectric Materials Research Part Two written by and published by Academic Press. This book was released on 2000-10-25 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Thermoelectric materials may be used for solid state refrigeration or power generation applications via the large Peltier effect in these materials. To be an effective thermoelectric material, a material must possess a large Seebeck coefficient, a low resistivity and a low thermal conductivity. Due to increased need for alternative energy sources providing environmentally friendly refrigeration and power generation, thermoelectric materials research experienced a rebirth in the mid 1990's. Semiconductors and Semimetals, Volume 70: Recent Trends in Thermoelectric Materials Research: Part Two provides an overview of much of this research in thermoelectric materials during the decade of the 1990's. New materials and new material concepts such as quantum well and superlattice structures gave hope to the possibilities that might be achieved. An effort was made to focus on these new materials and not on materials such as BiTe alloys, since such recent reviews are available. Experts in the field who were active researchers during this period were the primary authors to this series of review articles. This is the most complete collection of review articles that are primarily focussed on new materials and new concepts that is existence to date.

Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer. This book was released on 1993-01-31 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.