Download or read book Thermal Oxidation of Silicon New Experimental Results and Models written by Eugene A. Irene and published by . This book was released on 1987 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most studies of Silicon oxidation commence with a discussion of the Linear-Parabolic oxidation model developed by a number of workers in the 1960's. The limits of the model are pure diffusion of oxidant for thick Silicon dioxide films and a surface reaction limitation for thin films. The steady state picture of this series reaction scheme is discussed and used to explain new experimental results. New data relevant to Si oxidation is presented on the following subjects: five orientations of Si; photonic excitement; intrinsic film stress; silicide oxidation. The role of electrons on the oxidation kinetics is elucidated. A thermionic emission model for th initial stages of oxidation is proposed.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Download or read book Technical Reports Awareness Circular TRAC written by and published by . This book was released on 1987-08 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two Dimensional Thermal Oxidation of Silicon 1 Experiments written by D. B. Kao and published by . This book was released on 1979 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper introduces a unique experimental approach in which extensive data were obtained concerning the oxidation of cylindrical silicon structures of controlled radii of curvature. It is quantitatively demonstrated that the oxidation of curved silicon surfaces is retarded at low temperatures and sharp curvatures, and that the retardation is more severe on concave than convex structures. These observations will be interpreted using a physical model based on stress effects on oxide growth parameters. The paper begins with a brief review of two-dimensional oxidation phenomena. Experimental procedures are then described in detail. The experimental results as characterized by surface curvature, oxide growth rate and viscosity will provide useful design guidelines. A theoretical model is developed in a separate paper based on the premise that the viscous normal to the silicon surface is responsible for the retarded oxide growth and that the stress in the bulk of the oxide accounts for the difference between concave and convex structures.
Download or read book Experimental Investigations of Corona discharge Oxidation of Silicon written by Sayed-Masoud Sayedi and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: As integrated-circuit device dimensions decrease, the importance of having new reliable processes for growing MOS gate oxides becomes more and more evident. Short process times and low process temperatures are desirable features in view of tight thermal budget constraints and the need for precise location of dopants. However, conventional thermal oxidation to grow high quality films usually requires relatively long oxidation times and relatively high temperature. Previous research on negative point (anodic) corona-processed SiO 2 films has shown that the thermal budget incurred using the corona process is much lower than in standard thermal oxidation due to the greatly enhanced oxidation rate. Promising results of low-T corona-processed [Special characters omitted.] 100Å films have shown that the films had physical characteristics comparable to those obtained in thermal oxidation. This research extends the previous work: (a) thin oxides ([Special characters omitted.] 200Å) are processed in order to be potentially more relevant to modern MOS processes, and (b) a more thorough electrical characterization is initiated. Electrical tests show that oxide and interface charges are comparable to thermal oxides. Breakdown characteristics are promising. The boundary between the corona-processed and control regions is found to be severely compromised. Subsequent corona treatments which overlap such boundary regions are found to restore the quality of the oxide. Fourier Transform Infrared (FTIR) Spectroscopy results show that the negative corona films have a different structure from that of thermal oxide films. Electrical tests on positive point (cathodic) corona-processed SiO 2 films show that the electrical quality of the films is much worse than that of standard thermally grown films, grown at a similar temperature. In the interests of growing more-uniform negative-corona SiO 2 films on broader areas of silicon wafers, experiments using multi-point or multi-needle structures were conducted. The enhancement profiles of films grown in both positive and negative cases are simulated using linear-parabolic rate constants, modified to account for the corona current.
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book Advanced Processing and Characterization of Semiconductors III written by Devendra K. Sadana and published by . This book was released on 1986 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Results on Low Temperature Thermal Oxidation of Silicon written by E. A. Irene and published by . This book was released on 1986 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: The commonly accepted linear-parabolic oxidation model for the thermal oxidation of Si includes two rate processes in a steady state: reaction between Si and oxidant at the Si-Si02 interface; and transport of oxidant through the Si02 film. Based on available data, it is argued that the former process seems dominant for thin film growth in dry 02. A number of measured Si02 film and Si-Si02 interface measured properties are reported, as well as the variation of these properties with oxidation temperature and Si substrate orientation. These properties include; refractive index, density, intrinsic stress, interface fixed oxide charge and interface trapped charge. It is also observed that all of these properties display similar oxidation temperature and inert anneal behavior plus a complex orientation dependence. Through the use of a modified form for the interface reaction, a better understanding is obtained of both the origin of these measured properties, and new oxidation data taken on five Si orientations and at lower oxidation temperatures than previously reported.
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 1988 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book IEDM Technical Digest written by and published by . This book was released on 1987 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Silicon Oxidation Studies written by E. A. Lewis and published by . This book was released on 1986 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several models have been proposed to explain the role of stress on low temperature silicon oxidation kinetics but the lack of experimental data has precluded an analysis of these models. The results of experimental studies independently measuring the reaction kinetics and intrinsic stress as a function of orientation and oxidation temperature are presented. The proposed stress models are evaluated in terms of these results. It is concluded that the existing models do not explain all aspects of the data.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-11-06 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.
Download or read book Integrated Circuit Fabrication written by James D. Plummer and published by Cambridge University Press. This book was released on 2023-10-31 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master fundamental technologies for modern semiconductor integrated circuits with this definitive textbook, for students from a range of STEM backgrounds, with a focus on big-picture thinking and industry-grade simulation. Includes over 450 full-color figures and over 280 homework problems, with solutions and lecture slides for instructors.
Download or read book Government Reports Annual Index written by and published by . This book was released on 1987 with total page 1440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Passivity of Metals and Semiconductors written by Michael Brian Ives and published by The Electrochemical Society. This book was released on 2001 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
