Download or read book Thermal Atomic Layer Deposition of Titanium Nitride Films written by Anuththara Chalani Upeksha Abesinghe Arachchige and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the continuous miniaturization of microelectronic devices, robust deposition techniques are required which can provide continuous and conformal thin films even in high aspect ratio structures. Atomic Layer Deposition (ALD) is an excellent choice of deposition technique as it is capable of providing perfect film coverage. Because of its self-limited growth mechanism, ALD can afford sub-nanometer thickness control. Precursors used in ALD should be volatile, thermally stable at the deposition temperature, and highly reactive towards the co-regent. Traditionally, ALD has been used to grow metal oxide films. However, the microelectronics industry now demands ALD for metals and metal nitrides. Titanium nitride (TiN) is widely used as adhesion layers, electrode material, and diffusion barriers. Halogenated precursors used in TiN ALD studies require high deposition temperatures and the corrosive byproducts can etch the substrates. Dialkylamido titanium precursors have low thermal stabilities, and hence, significant carbon incorporation arises in TiN ALD. Moreover, during the TiN depositions, current Ti(IV) precursors should reduce to Ti(III) and this reduction step is often incomplete. Hence, the synthesis of novel Ti(III) precursors which do not require reduction steps is needed. The research herein seeks to develop highly volatile and thermally stable Ti(III) and Ti(IV) precursors and to carry out TiN ALD with highly thermally stable titanium metal-organic precursors.ALD of TiN film was carried out using Ti(tBu2DAD)2 and 1,1-dimethylhydrazine. Ti(tBu2DAD)2 is highly volatile and thermally stable with a decomposition temperature ≥ 350 °C, which is much higher than commonly used metal-organic precursors. According to the plots of growth rate versus pulse length on SiO2 substrates, self-limited growth behavior was observed ≤ 3.0 s for Ti(tBu2DAD)2 and ≤ 0.1 s 1,1dimethylhydrazine with a saturative growth rate of 0.28 Å/cycle. An ALD window was observed from 325 to 350 °C, and a linear relationship was observed for a plot of thickness versus the number of cycles at a deposition temperature of 325 °C for TiN growth on SiO2 substrates. GI-XRD revealed the presence of nanocrystalline material on the films deposited at 350 and 400 °C. Atomic force microscopy of 30 nm thick films deposited at 325 and 350 °C showed RMS roughness values of 4.1% and 5.2% of the film thicknesses, respectively. X-ray photoelectron spectroscopy analyses were performed on films deposited within the ALD window. Both samples revealed TiOxNy upon argon ion sputtering. TiN ALD was attempted using Ti(iPr2DAD)3 and 1,1-dimethylhydrazine, but highly resistive, rough, and poor-quality films were obtained. Novel Ti(III) complexes containing pyrazolate and carbohydrazide ligands were synthesized and characterized. These complexes are non-volatile and thermally unstable. Hence, they are not viable candidates for the TiN ALD study. However, Ti(III) pyrazolate complexes unexpectedly were found to decompose thermally to afford Ti(IV) pyrazolates and possibly Ti metal. A disproportionation mechanism is proposed. This finding may be valuable for the development of Ti metal, TiN, and TiSi2 CVD and ALD precursors.
Download or read book Substrate insensitive Atomic Layer Deposition of Plasmonic Titanium Nitride Films written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The plasmonic properties of titanium nitride (TiN) films depend on the type of substrate when using typical deposition methods such as sputtering. We show atomic layer deposition (ALD) of TiN films with very weak dependence of plasmonic properties on the substrate, which also suggests the prediction and evaluation of plasmonic performance of TiN nanostructures on arbitrary substrates under a given deposition condition. Our results also observe that substrates with more nitrogen-terminated (N-terminated) surfaces will have significant impact on the deposition rate as well as the film plasmonic properties. Furthermore, we illustrate that the plasmonic properties of ALD TiN films can be tailored by simply adjusting the deposition and/or post-deposition annealing temperatures. These characteristics and the capability of conformal coating make ALD TiN films on templates ideal for applications that require the fabrication of complex 3D plasmonic nanostructures.
Download or read book Plasma Assisted Atomic Layer Deposition of III Nitride Thin Films written by Çağla Özgit-Akgün and published by LAP Lambert Academic Publishing. This book was released on 2014-03 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."
Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Handbook of Chemical Vapor Deposition written by Hugh O. Pierson and published by William Andrew. This book was released on 1999-09-01 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.
Download or read book 2021 IEEE International Interconnect Technology Conference IITC written by IEEE Staff and published by . This book was released on 2021-07-06 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: IITC is sponsored by the IEEE Electron Devices Society as the premier conference for interconnect technology devoted to leading edge research in the field of advanced metallization and 3D integration for ULSI IC applications The conference includes papers on all aspects of BEOL MOL interconnects and metallization, including design, unit process, integration and reliability
Download or read book Titanium Nitride written by N. T. Wakelyn and published by . This book was released on 1961 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Manufacturing Engineering and Technology written by Andrew Y. C. Nee and published by Springer. This book was released on 2014-10-31 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Springer Reference Work Handbook of Manufacturing Engineering and Technology provides overviews and in-depth and authoritative analyses on the basic and cutting-edge manufacturing technologies and sciences across a broad spectrum of areas. These topics are commonly encountered in industries as well as in academia. Manufacturing engineering curricula across universities are now essential topics covered in major universities worldwide.
Download or read book Atomic Layer Deposition Applications 2 written by Ana Londergan and published by The Electrochemical Society. This book was released on 2007 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue gives an overview of the cutting edge research in the various areas where Atomic Layer Deposition (ALD) can be used, enabling the identification of issues, challenges, and areas where further research is needed. Contributions include: Memory applications, Interconnects and contacts, ALD Productivity enhancement and precursor development, ALD for optical and photonic applications, and Applications in other areas, such as MEMs, nanotechnology, fabrication of sensors and catalysts, etc.
Download or read book Plasma Assisted Synthesis and Physical Chemical Characterization of Titanium Nitride Films written by Michael Robert Hilton and published by . This book was released on 1987 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Molecular Catalysis written by and published by Elsevier. This book was released on 2003-04-02 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: Almost all contemporary organic synthesis involve transition metal complexes as catalysts or particular reagents. The aim of this book is to provide the reader with detailed accounts of elementary processes within molecular catalysis to allow its development and as an aid in designing novel catalytic systems. The book comprises authoritative reviews on elementary processes from experts working at the forefront of organometallic chemistry. · This is the first book that focuses on elementary processes in transition metal complexes for understanding catalytic mechanisms· Provides detailed description of elementary processes involved in catalytic cycles by experts in the field· Provides an overview of the mechanisms of various homogeneous catalyses
Download or read book Atomic Layer Deposition of Metal Oxide and Nitride Thin Films microform written by Becker, Jill Svenja and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 2002 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition of Tantalum Hafnium and Gadolinium Nitrides written by Ziwen Fang and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This research describes the development of ALD processes for the deposition of nitride materials including tantalum, hafnium and gadolinium nitrides. Ta and Hf nitrides are of significant interests for sub-l00nm silicon based electronic devices, while Gd nitride may be exploitable in future spintronic devices. ALD has been established a key manufacturing tool in microelectronics, the development of ALD processes for these nitrides are essential for future manufacturing of electronic devices and can benefit future manufacturing of spintronic devices. In the current research, these nitrides were deposited using ALD and the films were characterised using MEIS, AES, XRD, TEM, SEM, AFM, and a four point probe. Ta nitride films were grown at temperatures ranging from 200°C to 375°C using ALD with Pentakis( dimethylamino )tantalum, Ta(NMe2)s as the metal source and either ammonia or monomethyl-hydrazine (MMH) as a nitrogen eo-reactant. Self-limiting behaviour was observed for both ammonia and MMH processes, with growth rates of 0.6 and 0.4 A/cycle respectively at 300°C. Films deposited using ammonia were found to have a mono-nitride stoichiometry with a cubic microstructure and resistivities as low as 70 mfz.cm. In contrast, films deposited using MMH were found to be nitrogen rich Ta3Ns with an amorphous microstructure and high resistivities (>4 O.cm). A QCM was used to measure mass gain and loss during the cyclic ALD processes and the data was used in combination with MEIS to elucidate the Ta(NMe2)s absorption mechanisms. For Hf nitride, films were firstly deposited using thermal ALD with tetrakis( dimethyl amino )hafnium, Hf(NMe2)4 and ammonia between 100 and 400°C. Self- limiting behaviour was observed, however, the films exhibit a low density and were prone to oxidation during post-deposition exposure to air. A comparison between thermal and PE ALD was then made at 300°C with tetrakis(ethylmethylamino)hafnium, Hf(NEtMe)4 as the metal source and either molecular or plasma-cracked ammonia as a nitrogen source. PEALD allows shorter purge time, which significantly reduces the cycle length; PEALD also results in higher film density. The densities of the films deposited by PEALD and thermal ALD were found to be 11.6 and 9.7 g/cm'' respectively. Mass spectroscopy indicates that the process characteristics in PEALD are attributed to the nature of the eo-reactants, namely, radicals of hydrogen and nitrogen. Their high reactivity and short life time are responsible for the resulted high density and the short required purge time. All films deposited were found to be insulators and with an amorphous microstructure. The films deposited by PEALD remain amorphous and stable with no interactions between Hf and Si after vacuum annealing up to 800°C. Gd nitride films were successfully deposited using a cyclic PEALD based process. The deposition was carried out with tris(methylcyclopentadienyl)gadolinium, Od(MeCp )3, and remote nitrogen plasma exposure, separated by argon pulses. Films were deposited at temperatures between 150 and 300°C and capped with Ta nitride to prevent post deposition oxidation. Gd nitride with a 1:1 Od:N ratio, low oxygen incorporation (5%), good thickness uniformity (95%), an amorphous microstructure and smooth surface (Ra.=~0.7nm) have been deposited. Deposition with tris(silylamide)gadolinium, Od{N(SiMe3hh, and either ammonia or MMH was also investigated. Although the process using ammonia was unsuccessful due to the insufficient reactivity of ammonia, the results show that a reaction between Od{N(SiMe3)2h and MMh does take place. Od{N(SiMe3)2h was found to be a self-limiting precursor, however, the as deposited films were found to be OdSixOy• The silicon incorporation was attributed to partial breakdown of silylamine groups, where the oxygen incorporation was attributed to the possible tetrahydrofuran (THF) contamination in the precursor.
Download or read book Atomic Layer Processing written by Thorsten Lill and published by John Wiley & Sons. This book was released on 2021-06-28 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn about fundamental and advanced topics in etching with this practical guide Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching. The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology. Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from: A complete discussion of the fundamentals of how to remove atoms from various surfaces An examination of emerging etching technologies, including laser and electron beam assisted etching A treatment of process control in etching technology and the role played by artificial intelligence Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.
Download or read book Organometallic Chemistry written by Nathan J Patmore and published by Royal Society of Chemistry. This book was released on 2018-11-16 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the increase in volume, velocity and variety of information, researchers can find it difficult to keep up to date with the literature in their field. Providing an invaluable resource, this volume contains analysed, evaluated and distilled information on the latest in organometallic chemistry research and emerging fields. The reviews range in scope and include π-coordinated arene metal complexes and catalysis by arene exchange, rylenes as chromophores in catalysts for CO2 photoreduction, metal nodes and metal sites in metal–organic frameworks, developments in molecular precursors for CVD and ALD, and multiphoton luminescence processes in f-element containing compounds.
Download or read book Handbook of Refractory Carbides Nitrides written by Hugh O. Pierson and published by William Andrew. This book was released on 1996-12-31 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Refractory carbides and nitrides are useful materials with numerous industrial applications and a promising future, in addition to being materials of great interest to the scientific community. Although most of their applications are recent, the refractory carbides and nitrides have been known for over one hundred years. The industrial importance of the refractory carbides and nitrides is growing rapidly, not only in the traditional and well-established applications based on the strength and refractory nature of these materials such as cutting tools and abrasives, but also in new and promising fields such as electronics and optoelectronics.
