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Book NASA Technical Paper

Download or read book NASA Technical Paper written by and published by . This book was released on 1983 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Experimental Studies of Lateral Electron Transport in Gallium Arsenide aluminum Gallium Arsenide Heterostructures

Download or read book Experimental Studies of Lateral Electron Transport in Gallium Arsenide aluminum Gallium Arsenide Heterostructures written by Mark Robert Keever and published by . This book was released on 1983 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electron-transport characteristics of modulation-doped GaAs-A1xGa1-xAs heterostructures have been measured over a wide range of temperatures using a diverse set of device structures. Short voltage pulses were used to apply a broad range of lateral (parallel to the interface) electric fields and the resulting current-field characteristics were determined using a sampling oscilloscope and x-y recorder. It was observed that the high electron mobility in these structures initially increased as the electric field was increased from zero. The low-field mobility reached a maximum at fields below 500 V/cm and then dropped quickly at low temperatures for increasingly higher electric fields. At higher temperatures (200 K to 300 K) there was comparatively little change in the mobility for fields up to 2 kV/cm. For higher fields (above 2 kV/cm) it was found that the electrons could gain enough energy to be thermionically emitted over the conduction-band discontinuity from the high-mobility GaAs to the low-mobility A1GaAs. This real-space transfer (RST) of electrons resulted in current saturation or various degrees of negative differential resistance (NDR) in the samples being studied. It was demonstrated that the new real-space transfer mechanism could be used in the creation of fast electron switching and storage devices and also high-frequency oscillators.

Book An Investigation of Deep Levels in Aluminum Gallium Arsenide gallium Arsenide Modulation doped Heterojunction Structures

Download or read book An Investigation of Deep Levels in Aluminum Gallium Arsenide gallium Arsenide Modulation doped Heterojunction Structures written by Anthony Joseph Valois and published by . This book was released on 1985 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures

Download or read book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Monthly Catalogue United States Public Documents

Download or read book Monthly Catalogue United States Public Documents written by and published by . This book was released on 1984 with total page 1252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Properties of Aluminium Gallium Arsenide

Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.

Book NASA Technical Paper

Download or read book NASA Technical Paper written by and published by . This book was released on 1983 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metals Abstracts

Download or read book Metals Abstracts written by and published by . This book was released on 1984 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Physics Briefs

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Aeronautical Journal

Download or read book The Aeronautical Journal written by and published by . This book was released on 1983 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metals Abstracts Index

Download or read book Metals Abstracts Index written by and published by . This book was released on 1984 with total page 1034 pages. Available in PDF, EPUB and Kindle. Book excerpt: