Download or read book Theoretical Investigation of Device Aspects of Semiconductor Superlattices written by G. H. Doehler and published by . This book was released on 1983 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor superlattices are synthetic crystals, which consist either of a periodic sequence of ultrahigh layers of two different semiconductors ('compositional superlatices) or of a single homogeneous semiconductor, which is periodically n- and p- doped, investigated electrical and electro-optical device applications of semiconductor superlattices in general, but with special emphasis on fast devices and oscillators for microwave generation. It is found, that an extremely wide spectrum of possibilities results from the fact that the properties of superlattices can be tailored for a given goal. Considered were two groups of device applications according to the two major classes of semiconductor superlattices: i) Devices, which rely on properties, which are in common to both classes of superlattices. The most appealing devices in this class are the far infrared radiation lasers, based on stimulated emission associated with interlayer transitions. ii) Devices, which relay on the unique features of the doping superlattices. The electronic properties of these superlattices cannot only be tailored but they can be tuned within wide limits for a given specimen. Moreover, the electron-hole recombination lifetimes exceed those of the host materials by many orders of magnitude.
Download or read book Theoretical Investigation of Material Characteristics of Semiconductor Superlattices written by S. D. Sarma and published by . This book was released on 1985 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last six months that we had this contract we have been able to initiate all phases of the proposed work, making substantial progress on a number of research areas covering the many different aspects of the contract. In particular, we have written nine papers (six of which have already been published or accepted for publication) and have submitted seven abstracts to conferences. We have done enough work for several more publications and these papers are in preparation. We also plan to submit three papers to the upcoming 2nd International Conference on Metastable and Modulated Semiconductor Structures (September 1985 in Japan) and three papers to the upcoming 6th International Conference on Electronic Properties of Two Dimensional Systems (September 1985).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1988 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Superlattice to Nanoelectronics written by Raphael Tsu and published by Elsevier. This book was released on 2010-10-22 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. Written by one of the founders of this field Delivers over 20% new material, including new research and new technological applications Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
Download or read book Research in Progress written by United States. Army Research Office and published by . This book was released on 1984 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).
Download or read book Silicon Superlattices written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-08-13 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice. Moriarty, J. A. Unspecified Center NASA-CR-164568 NAG1-33...
Download or read book Properties of Impurity States in Superlattice Semiconductors written by C.Y. Fong and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
Download or read book Device Physics of Superlattices and Small Structures written by T. C. McGill and published by . This book was released on 1987 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental and theoretical studies are presented of HgTe CdTe superlattices. We report the first study of the photoluminescence and photoconductivity spectra of superlattices. We find that Photoluminescence, photoconductivity and infrared absorption all point to the same band gap for the superlattice. Theoretical studies of these superlattices have given the first estimates of the magnitude of the optical absorption, the first study of the role of strain, and the first study of the role of the band offset in determining the properties of superlattices. We have also invented a novel electronic device that has negative resistance based on HgCdTe-CdTe-HgCdTe heterostructures. We have carried out the first theoretical studies of superlattices that include dilute magnetic semiconductors. Superlattices of CdTe-ZnTe have been studied experimentally and theoretically to give the first investigations of the properties of possible II-IV visible light emitters.
Download or read book Japanese Science and Technology written by and published by . This book was released on 1986 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Superlattices Growth And Electronic Properties written by Fernando Agullo-rueda and published by World Scientific. This book was released on 1995-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
Download or read book Theory of Optical Processes in Semiconductors written by P. K. Basu and published by Clarendon Press. This book was released on 1997-11-13 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor optelectronic devices are at the heart of all information generation and processing systems and are likely to be essential components of future optical computers. With more emphasis on optoelectronics and photonics in graduate programmes in physics and engineering, there is a need for a text providing a basic understanding of the important physical phenomena involved. Such a training is necessary for the design, optimization and search for new materials, devices, and application areas. This book provides a simple quantum mechanical theory of important optical processes, i.e., band-to- band, intersubband and excitonic absorption and recombination in bulk, quantum wells, wires, dots, superlattices and strained layers including electro-optic effects. The classical theory of absorption, quantization of radiation, and band picture based on k.p perturbation has been included to provide the necessary background. Prerequisites for the book are a knowledge of quantum mechanics and solid state theory. Problems have been set at the end of each chapter, some of which may guide the reader to study processes not covered in the book. The application areas of the phenomena are also indicated. This book is intended for use by graduate students in physics and engineering, beginners in the field and engineers. The use of simple one-electron theory throughout may also make parts of it useful for second- and third-year undergraduates.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Physics and Applications of Quantum Wells and Superlattices written by E.E. Mendez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1985 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Of Semiconductors The Proceedings Of The Xxi International Conference In 2 Volumes written by Ping Jiang and published by World Scientific. This book was released on 1993-03-31 with total page 2151 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Download or read book Frontiers in Nanoscale Science of Micron Submicron Devices written by A.-P. Jauho and published by Springer Science & Business Media. This book was released on 1996-10-31 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.
