Download or read book The Structure and Physical Properties of Microcrystalline Silicon Germanium Alloys and Intrinsic Microcrystalline Silicon Thin Films by Reactive Magnetron Sputtering written by Seon-Mee Cho and published by . This book was released on 1995 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Hydrogenated Amorphous Silicon germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering written by Samuel J. Levang and published by . This book was released on 2012 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using RF excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 4500 between 150 and 200°C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio between H bonded to Si and H bonded to Ge. The PA shows a systematic increase with increasing temperature, generally independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality is discussed.
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physical Properties of HWCVD Microcrystalline Silicon Thin Films written by and published by . This book was released on 2002 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering written by Renjie Wang and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and Hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers is studied.
Download or read book Advanced Strategies in Thin Film Engineering by Magnetron Sputtering written by Alberto Palmero and published by MDPI. This book was released on 2020-12-10 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have witnessed the flourishing of numerous novel strategies based on the magnetron sputtering technique aimed at the advanced engineering of thin films, such as HiPIMS, combined vacuum processes, the implementation of complex precursor gases or the inclusion of particle guns in the reactor, among others. At the forefront of these approaches, investigations focused on nanostructured coatings appear today as one of the priorities in many scientific and technological communities: The science behind them appears in most of the cases as a "terra incognita", fascinating both the fundamentalist, who imagines new concepts, and the experimenter, who is able to create and study new films with as of yet unprecedented performances. These scientific and technological challenges, along with the existence of numerous scientific issues that have yet to be clarified in classical magnetron sputtering depositions (e.g., process control and stability, nanostructuration mechanisms, connection between film morphology and properties or upscaling procedures from the laboratory to industrial scales) have motivated us to edit a specialized volume containing the state-of-the art that put together these innovative fundamental and applied research topics. These include, but are not limited to: • Nanostructure-related properties; • Atomistic processes during film growth; • Process control, process stability, and in situ diagnostics; • Fundamentals and applications of HiPIMS; • Thin film nanostructuration phenomena; • Tribological, anticorrosion, and mechanical properties; • Combined procedures based on the magnetron sputtering technique; • Industrial applications; • Devices.
Download or read book Phase Transformation and Properties of Magnetron Co Sputtered Gesi Thin Films written by Ziwen Xu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Phase Transformation and Properties of Magnetron Co-sputtered GeSi Thin Films" by Ziwen, Xu, 徐子文, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3984877 Subjects: Sputtering (Physics) Thin films Germanium Silicon Magnetrons
Download or read book Properties of Silicon Germanium and SiGe Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.
Download or read book Growth and Properties of Hydrogenated Amorphous Silicon Carbon Alloys by Dc Reactive Magnetron Sputtering written by Siyuan Yang and published by . This book was released on 1995 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: We deposited amorphous hydrogenated silicon-carbon (a-Si$rmsb{1-x}Csb{x}$:H) alloy films by dc reactive magnetron sputtering (RMS) of a silicon target in a plasma of (Ar + H$rmsb2$ + CH$sb4).$ Films with optical bandgaps of 1.8-2.0 eV and x $le$ 0.2 have a compact microstructure; no CH$rmsb{x}$ groups are detected by their stretching mode infrared absorption, and small angle X-ray scattering indicates a microvoid volume of $le$2.5% for x $le$ 0.3. The electronic properties are also excellent in terms of density of sub-bandgap defect states DOS, Urbach energy E$rmsb{U},$ ambipolar diffusion length L$rmsb{h},$ photoconductive mobility-lifetime product $mutau$ and dark conductivity $rmsigmasb{D}$ for Tauc bandgap E$rmsb{g}approx$ 1.90 eV. We attribute the quality of these films to the translational energy of the RMS growth flux, which leads to a dense and relatively homogeneous structure. Substrate cleaning and ion bombardment play important roles in the adhesion, morphology and structure of hydrogenated amorphous silicon and silicon-carbon alloys grown on c-Si by dc reactive magnetron sputtering. Scanning electron microscopy is used to study the surface morphology and fracture cross section of films. The hydrogen bonding and microstructure are studied by IR absorption, thermal evolution of hydrogen. The best adhesion is obtained by (i) cleaning the substrate with combination of cycles of UV/ozone oxidation and HF etching and by (ii) reducing plasma ion bombardment through electrically floating the c-Si substrate. The reduced ion bombardment has a significant influence on the hydrogen bonding configurations and hydrogen evolution process. The film composition is a function of the substrate temperature, growth rate, and the partial pressures of methane and hydrogen. We show which combination of parameters leads to the best film properties, and provide empirical evidence for the mechanisms of C and H incorporation. We then use the compositional control provided by RMS to resolve several long standing debates in the literature. (i) We deposit films of constant composition from 150 to 310$spcirc$C, and find that higher substrate temperature yields the best electronic properties. (ii) The hydrogen content is primarily responsible for the bandgap increase. (iii) Carbon incorporation with x $le$ 0.3 suppresses microvoid formation in sputtered material. (iv) The relative intensity of SiH$rmsb{x}$ to SiH stretching mode absorptions (the IR microstructure factor) and the amount of microvoids is not monotonically correlated with the photoconductive mobility-lifetime product. Considering the influence of film compositions on microstructure observed in this study, we propose that similar compositions should be the premise before the comparison of microstructure difference and the study of its influence on electronic properties. Our results indicate that reactive magnetron sputtering is an excellent and industrially suitable technique for the deposition of electronic-grade a-Si$rmsb{1-x}Csb{x}$:H thin films.
Download or read book Structure of Amorphous Silicon and Germanium Alloy Films written by and published by . This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of the research is to improve the understanding at the microscopic level of amorphous silicon and germanium film structures deposited under various methods. The work is to correlate and theoretically analyze, nuclear magnetic resonance, NMR, ESR, electron spin resonance, and other measurements. The alloys of concern include those obtained by adding dopants to hydrogenated silicon and germanium. The work has been directed to continue deuteron magnetic resonance DMR studies and to pay particulate attention to those structural features which may correlate with the photoelectronic properties of the material. The 1990 (DMR) accomplishments have included correlation of inhomogeneous nuclear spin relaxation with photovoltaic quality. In a second project, a structural rearrangement of atoms has been demonstrated to be associated with the light-induced metastability in a-Si:D, H films. A third approach has employed proton-deuteron coupled spin dynamics to examine hydrogen and deuterium motions in quality films of a-Si:H; a-Si:P, H; and a-Si:D, H. The B- P-doped films show a significantly enhanced hydrogen mobility above 200 K. We also have performed a number of detailed calculations on the effects coordination and strain on the deep electronic states rising from B and P dopants in a-Si as well as the band tail states in the gap of a-Si arising from strained bonds. This work gives a rather complete picture of the effects on the gap states of strain and dopants in the absence of H and for a given configuration of the a-Si network. We conclude that the methods that we have developed over the past three years are capable of describing many of the effects of strained bonds, especially their effect on dopants. 25 refs., 11 figs., 3 tabs.
Download or read book Characterization of Piezoelectric AIN Thin Films Deposited on Silicon by RF Reactive Magnetron Sputtering at Low Temperature for Acoustic Wave Devices microform written by Akhtar Mirfazli and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 2004 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transition Metals and Silicon written by Benjamin Geisler and published by Cuvillier Verlag. This book was released on 2015-03-12 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present, richly illustrated book takes the reader on a tour through the field of modern spintronics, discussing key aspects such as ferromagnetic thin films, dilute magnetic semiconductors, and magnetic tunnel junctions. It demonstrates different approaches to a detailed understanding of magnetism and materials properties on the atomic scale, as required by the ongoing miniaturization of electronics. Due to their technological relevance, the focus lies on silicon and different transition metals like chromium, manganese, and iron. Among others, the following questions are addressed from the viewpoint of state-of-the-art computational physics: Is the scanning tunneling microscope capable of resolving even complex film atomic structures? How can we use its spin-sensitive form to gain insight into interactions of magnetic impurities in bulk semiconductors? Why is chromium-doped silicon especially interesting? Does one need a Seebeck coefficient to obtain spincaloric properties ab initio?
Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Download or read book Kinetic Studies of Growth of Silicon and Silicon Germanium Thin Films Gas surface Reactivity Germanium Surface Segregation and the Effect of Coincident Atomic Hydrogen written by Yongjun Zheng and published by . This book was released on 2000 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the kinetic studies presented in this thesis, a novel process was proposed to achieve selective epitaxial growth of Si and Si1-x Gex. Preliminary results show that up to 300 nm epitaxial silicon has been grown while with no sign of polycrystalline silicon growth.
Download or read book Morphological Evolution and Optical Properties of Germanium Thin Films Grown on Silicon by Molecular Beam Epitaxy written by Peter W. Deelman and published by . This book was released on 1996 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
