Download or read book The Stability of Amorphous Metals on Semiconductor Substrates written by J. H. Perepezko and published by . This book was released on 1984 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Progress Report on the Stability of Amorphous Metal Films on Semiconductor Substrates written by J. D. Wiley and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Of Amorphous Semiconductors written by Morigaki Kazuo and published by World Scientific. This book was released on 1999-04-29 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si:H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, quantum phenomena in multilayer films.
Download or read book Thermal Stability Structure and Electrical Properties of Amorphous Metal Alloys for Electronic Applications written by Ranida Wongpiya and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As complementary metal oxide semiconductor (CMOS) transistors continue to scale down, the work function variation (WFV) of the metal gates is becoming a dominant factor of the threshold voltage variation. This is due to the different grain orientations present in polycrystalline metal gates. Replacing these with amorphous or near-amorphous metals can reduce WFV. Furthermore, amorphous materials are known to have superior diffusion barrier properties due to their lack of grain boundaries. This can help prevent work function change due to the diffusion of metals in contact with the gate. In the first part of this thesis, a CoTiN metal alloy is introduced as a potential gate material. Using TiN-based material allows for an easy integration with the current technology as polycrystalline TiN is commonly used as the gate. With the addition of cobalt, thin films of TiN become more amorphous, consisting of nanocrystals in an amorphous matrix. Reducing the nitrogen content further decreases the film's crystallinity. In addition, CoTiN films also exhibit good thermal stability, low resistivity, and low roughness. Even though these materials are not completely amorphous, their small crystal size and an amorphous matrix can potentially reduce WFV and improve the diffusion barrier behavior. The second part focuses on the barrier properties of TiN and CoTiN against the diffusion of metal in contact with the gate. The work function (WF) of the bilayer-metal gate structure (Al/CoTiN/HfO2/SiO2/Si or Al/TiN/HfO2/SiO2/Si) varies with the amount of Al that diffuses to the metal/dielectric interface and is used to measure the diffusion. The WF as a function of the bottom metal layer thicknesses is extracted using capacitance-voltage measurements. A thickness above 15 nm appears to be necessary for maintaining the WF without any effects from the top metal layer. Depending on the reactivity between different elements in different metal layers, an additional barrier may be needed to prevent unwanted diffusion and reaction. Investigating the thermodynamics of different elements within the gate stack is important and can help in choosing appropriate materials. In the last part of the thesis, the diffusion barrier properties of another amorphous metal, TaWSiC, is studied for interconnect application. Copper/barrier/Si structures are annealed at different temperatures and characterized for phase and structural changes. Unlike polycrystalline Ta, 5 nm of TaWSiC is able to prevent Cu reaction with Si up to 550C.
Download or read book Amorphous and Microcrystalline Semiconductor Devices written by Jerzy Kanicki and published by Artech House Materials Science. This book was released on 1992 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explores key aspects of materials and device physics including electronic properties and stability issues. Supplemented by 321 equations, 370 illustrations, and an extensive list of references.
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices Annual Report May 31 1995 May 30 1996 written by and published by . This book was released on 1997 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Download or read book Amorphous Metals and Semiconductors written by P. Haasen and published by Elsevier. This book was released on 2013-10-22 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous Metals and Semiconductors contains the proceedings of an international workshop held at Coronado, California, USA on May 12-18, 1985. Organized into five parts, this book first looks into the historical perspective on semiconductors and metals. This book then explains the glass formation, magnetic glasses, and amorphous semiconductors. The mechanical and chemical properties of these materials are also given.
Download or read book The Thermal Stability of Amorphous Metals Made by Rapid Solidification and Ion Implantation written by James Hamlyn-Harris and published by . This book was released on 1986 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ionic Liquid Activation of Amorphous Metal Oxide Semiconductors for Flexible Transparent Electronic Devices written by and published by . This book was released on 2016 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices Annual Report May 31 1995 May 30 1996 written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Download or read book Stability of Amorphous Silicon Alloy Materials and Devices written by Stafford and published by American Inst. of Physics. This book was released on 1998-04-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1985 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Computer Engineering written by University of Wisconsin--Madison. Department of Electrical and Computer Engineering and published by . This book was released on 1985 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1094 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid and Amorphous Metals V written by C. N. J. Wagner and published by . This book was released on 1984 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt:
