Download or read book The Residual Strain in GaAs Epitaxial Layers Grown in Si Substrates by Molecular Beam Epitaxy written by Hyunchul Sohn and published by . This book was released on 1993 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1988 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Material and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy written by Henry Po-Heng Lee and published by . This book was released on 1989 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomistic Aspects of Epitaxial Growth written by Miroslav Kotrla and published by Springer Science & Business Media. This book was released on 2002-07-31 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

Download or read book Epitaxial Crystal Growth written by E. Lendvay and published by Trans Tech Publications Ltd. This book was released on 1991-01-01 with total page 979 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990

Download or read book Acoustic Thermal Wave and Optical Characterization of Materials written by G.M. Crean and published by Elsevier. This book was released on 2014-08-04 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Download or read book Condensed Systems of Low Dimensionality written by J.L. Beeby and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 811 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Special Programme Panel on Condensed Systems of Low Dimensionality began its work in 1985 at a time of considerable activity in the field. The Panel has since funded many Advanced Research Workshops, Advanced Study Institutes, Cooperative Research Grants and Research Visits across the breadth of its remit, which stretches from self-organizing organic molecules to semiconductor structures having two, one and zero dimensions. The funded activities, especially the workshops, have allowed researchers from within NATO countries to exchange ideas and work together at a period of development of the field when such interactions are most valuable. Such timely support has undoubtedly assisted the development of national programs, particularly in the countries of the alliance wishing to strengthen their science base. A closing Workshop to mark the end of the Panel's activities was organized in Marmaris, Turkey from April 23-27, 1990, with the same title as the Panel: Condensed systems of Low Dimensionality. This volume contains papers presented at that meeting, which sought to bring together chemists, physicists and engineers from across the spectrum of the Panel's activities to discuss topics of current interest in their special fields and to exchange ideas about the effects of low dimensionality. As the following pages show, this is a topic of extraordinary interest and challenge which produces entirely new scientific phenomena, and at the same time offers the possibility of novel technological applications.

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Download or read book Proceedings of the Symposium on Heteroepitaxial Approaches in Semiconductors Lattice Mismatch and Its Consequences written by A. T. Macrander and published by . This book was released on 1989 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Growth and Characterization of GaAs Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy written by Peter Sheldon and published by . This book was released on 1986 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advances in GaN GaAs SiC and Related Alloys on Silicon Substrates Volume 1068 written by Materials Research Society. Meeting Symposium C. and published by . This book was released on 2008-08-29 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt: