Download or read book The Physics of Instabilities in Solid State Electron Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
Download or read book The Physics of Instabilities in Solid State Electron Devices written by Harold L. Grubin and published by . This book was released on 2014-01-15 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma and Current Instabilities in Semiconductors written by Juras Pozhela and published by Elsevier. This book was released on 2017-05-03 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.
Download or read book Nonlinear Dynamics in Solids written by Harry Thomas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the notes of lectures given at the school on "Nonlinear Dy namics in Solids" held at the Physikzentrum Bad Honnef, 2-6 October 1989 under the patronage of the Deutsche Physikalische Gesellschaft. Nonlinear dynamics has become a highly active research area, owing to many interesting developments during the last three decades in the theoretical analysis of dynamical processes in both Hamiltonian and dissipative systems. Research has been focused on a variety of problems, such as the characteristics of regular and chaotic motion in Hamiltonian dynamics, the problem of quantum chaos, the forma tion and properties of solitary spatio-temporal structures, the occurrence of strange attractors in dissipative systems, and the bifurcation scenarios leading to complex time behaviour. Until recently, predictions of the theory have been tested predominantly on insta bilities in hydrodynamic systems, where many interesting experiments have provided valuable input and have led to a fruitful interaction between experiment and theory. Fluid systems are certainly good candidates for performing clean experiments free from disturbing influences: with fluids, compared to solids, it is simpler to prepare good samples, the relevant length and time scales are in easily accessible ranges, and it is possible to do measurements "inside" the fluid, because it can be filled in after the construction of the apparatus. Further, the theory describing the macroscopic dynamics of fluids is well established and contains only very few parameters, all of which have well-known values.
Download or read book Encyclopedia of Nonlinear Science written by Alwyn Scott and published by Routledge. This book was released on 2006-05-17 with total page 1107 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 438 alphabetically-arranged essays, this work provides a useful overview of the core mathematical background for nonlinear science, as well as its applications to key problems in ecology and biological systems, chemical reaction-diffusion problems, geophysics, economics, electrical and mechanical oscillations in engineering systems, lasers and nonlinear optics, fluid mechanics and turbulence, and condensed matter physics, among others.
Download or read book Nonequilibrium Phase Transitions in Semiconductors written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors can exhibit electrical instabilities like current runaway, threshold switching, current filamentation, or oscillations, when they are driven far from thermodynamic equilibrium. This book presents a coherent theoretical des- cription of such cooperative phenomena induced by generation and recombination processes of charge carriers in semicon- ductors.
Download or read book Nonlinear Spatio Temporal Dynamics and Chaos in Semiconductors written by Eckehard Schöll and published by Cambridge University Press. This book was released on 2001-02-22 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together concepts from semiconductor physics, nonlinear-dynamics and chaos to examine semiconductor transport phenomena.
Download or read book Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices written by Franz-Josef Niedernostheide and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices the contributions of the International Conference on Nonlinear Dynamics and Pattern Formation in the Natural Environment (ICPF '94) in Noordwijkerhout, held by many internationally reknown experts, are compiled. To connect the field of semiconductor physics with the theory of nonequilibrium dissipative systems, the emphasis lies on the study of localized structures, their stability and bifurcation behaviour. A point of special interest is the evolution of dynamic structures and the investigation of more complex structures arising from interactions between these structures. Possible applications of nonlinear effects and self-organization phenomena with respect to signal processing are discussed.
Download or read book Current Trends in Applied Mathematics written by Miguel Angel Herrero and published by Editorial Complutense. This book was released on 1996 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book Autosolitons written by B.S. Kerner and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 687 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is devoted to an entirely new branch of nonlinear physics - solitary intrinsic states, or autosolitons, which form in a broad class of physical, chemical and biological dissipative systems. Autosolitons are often observed as highly nonequilibrium regions in slightly nonequilibrium systems, in many ways resembling ball lightning which occurs in the atmosphere. We develop a new approach to problems of self-organization and turbulence, treating these phenomena as a result of spontaneous formation and subsequent evolution of autosolitons. Scenarios of self-organization involve sophisticated interactions between autosolitons, whereas turbulence is regarded as a pattern of autosolitons which appear and disappear at random in different parts of the system. This monograph is the first attempt to provide a comprehensive summary of the theory of autosolitons as developed by the authors over the years of research. The monograph is comprised of three more or less autonomous parts. Part I deals with the physical nature and experimental studies of autosolitons and self organization in various physical systems: semiconductor and gas plasma, heated gas mixture, semiconductor structures, composite superconductors, optical and magnetic media, systems with uniformly generated combustion matter, distributed gas-discharge and electronic systems. We discuss feasibility of autosolitons in the form of highly nonequilibrium regions in slightly nonequilibrium gases and semiconductors, "hot" and "cold" regions in semiconductor and gas plasmas, static, pulsating and traveling combustion fronts.
Download or read book Hot Carriers in Semiconductors written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 575 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.
Download or read book Physical Foundations of Solid State and Electron Devices written by A. M. Ferendeci and published by . This book was released on 1991-12-01 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1980 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra and published by Springer Nature. This book was released on 2021-11-25 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
