Download or read book The Influence of In situ Photo excitation and Electric Field on Ion Implantation Induced Damage Accumulation in Silicon written by Jallepally Ravi and published by . This book was released on 1995 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Suppression of Self interstitials in Silicon During Ion Implantation Via In situ Photoexcitation written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1995 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Charge State Defect Engineering of Silicon During Ion Implantation written by and published by . This book was released on 1997 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from changes in defect interactions caused in part by changes to the charge state of defects formed during implantation.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Download or read book INIS Atomindex written by and published by . This book was released on 1995 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage written by and published by . This book was released on 2001 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H2-gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

Download or read book Damage Accumulation and Recovery in Xe Implanted 4H SiC written by Chennan Jiang and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is a material that can be considered as a wide band gap semiconductor or as a ceramic according to its applications in microelectronics and in nuclear energy system (fission and fusion). In both fields of application defects or damage induced by ion implantation/ irradiation (doping, material structure) should be controlled. This work is a study of defects induced by noble gas implantation according to the implantation conditions (fluence and temperature). The elastic strain buildup, particularly in the case of xenon implantation, has been studied at elevated temperatures for which the dynamic recombination prevents the amorphization transition. A phenomenological model based on cascade recovery has been proposed to understand the strain evolution with increasing dose and for different noble gases. In addition, with the help of transmission electron microscopy the evolution of defects under subsequent annealing was studied. The formation of nanocavities was observed under severe implantation/annealing conditions. These cavities are of different nature (full of gas or empty) according to the xenon and damage distribution. This study is also linked to swelling properties under irradiation that should be projected in the SiC application fields.

Download or read book Ceramic Abstracts written by and published by . This book was released on 1994 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Modeling of Ion Implantation Induced Transient Enhanced Diffusion in Silicon written by Henry Shaw Chao and published by . This book was released on 1997 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Irradiation Induced Damage and Dynamic Recovery in Single Crystal Silicon Carbide and Strontium Titanate written by Haizhou Xue and published by . This book was released on 2015 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this thesis work is to gain better understanding of ion-solid interaction in the energy regime where electronic and nuclear energy loss are comparable. Such responses of materials to ion irradiations are of fundamental importance for micro-electronics and nuclear applications. The ion irradiation induced modification for the crystal structure, the physical and chemical properties etc. may strongly affect the performance of functional materials that needs to be better understood. Experimentally, ion irradiation induced damage accumulation and dynamic recovery in SiC [silicon carbide] and SrTiO3 [strontium titanate] were studied in this dissertation project. Five chapters are presented: Firstly, electronic stopping power for heavy ions in light targets was experimentally evaluated for SiC. Secondly, out-surface diffusion of Ag atoms through SiC coating layer was studied by ion implantation and thermal annealing. The result also suggested that a SiO2 [silicon dioxide] thin film might serve as a diffusion barrier. Thirdly, a thermally induced recovery was studied for single crystal SiC. Through well controlled isothermal and isochronal annealing processes, activation energies were estimated and attributed to certain defect migration/recombination mechanisms. The fourth chapter focuses on a competing effect on defect dynamics due to ionization-induced defect recovery in SiC. Recovery of the existing defects resulting from a thermal spike along the ion path was expected, and was experimentally confirmed by using energetic ions. The results suggest a low threshold of electronic stopping power for the ionization-induced recovery. In the last chapter, an example of how the target material responses differently to energy deposition are demonstrated for single crystal SrTiO3. Instead of the recovery that was observed in SiC, a synergy effect of the coupled electronic and nuclear stopping energy deposition leads to formation of amorphous ion tracks. Systematic studies towards the role of defect concentration and electronic stopping power in the synergy effect were performed.

Download or read book A Study of Ion Implantation Damage and Its Effects in Silicon written by Kwok Wai Chan and published by . This book was released on 1997 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book In situ Observations of the Development of Heavy ion Damage in Semiconductors written by and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In-situ observations on ion-beam induced amorphisation of GaAs, GaP and Si are reported. Direct-impact amorphisation was found to occur in GaAs irradiated with 100-keV Xe ions to low doses at low temperature (approx. 40K) in contrast to previous room temperature irradiations. In GaP and in silicon, where heavy projectiles do cause direct impact amorphisation at room temperature, the evolution of the damage structure with ion-dose was studied. The defect yield both in GaP irradiated with 100-keV Kr ions and in Si irradiated with 100-keV Xe+ ions was found to decrease monotonically with increasing dose over the dose range 1015 to 1017 ions m−2.

Download or read book Studies on Ion Beam Induced Damage Accumulation and Crystal Recovery by Solid Phase Epitaxy in Silicon written by Brett Cameron Johnson and published by . This book was released on 2003 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polyatomic ion implantation damage in silicon written by J. A. Davies and published by . This book was released on 1975 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion induced Damage in Si written by and published by . This book was released on 2006 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Technologies written by Annie Baudrant and published by . This book was released on 2011 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.