Download or read book The Growth and Characterization of Beta Silicon Carbide beta Sic Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth and Characterization of Beta Silicon Carbide Sic Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Influence of Annealing on Thin Films of Beta SiC written by Irvin Berman and published by . This book was released on 1972 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.
Download or read book Growth and Characterization of Silicon Carbide Thin Films and Nanowires written by Lunet Estefany Luna and published by . This book was released on 2016 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. In terms of high-temperature microdevices, maintaining low-resistance electrical contact between metal and SiC remains a challenge. Although SiC itself maintains structural and electrical stability at high temperatures, the metallization schemes on SiC can suffer from silicide formation and oxidation when exposed to air. The second chapter presents efforts to develop stable metallization schemes to SiC. A stack consisting of Ni-induced solid-state graphitization of SiC and an atomic layer deposited layer of alumina is shown to yield low contact resistivity of Pt/Ti to polycrystalline n-type 3C-SiC films that is stable in air at 450 oC for 500 hours. The subsequent chapters focus on the growth and structural characterization of SiC nanowires. In addition to its structural stability in harsh-environments, there is interest in controlling SiC crystal structure or polytype formation. Over 200 different polytypes have been reported for SiC, with the most common being 3C, 4H, and 2H. In terms of SiC nanowire growth, the 3C or cubic phase is the most prevalent. However, as the stacking fault energy for SiC is on the order of a few meV, it is common to have a high density of stacking faults within a given SiC crystal structure. Thus, to enable reliable performance of SiC nanowires, a growth method that can promote a specific polytype or reduce stacking faults is of importance. Ni-catalyzed chemical vapor deposition method is employed for the growth of the nanowires. The effects of substrate structure and quality as well as the various growth parameters such as temperature, pressure, and post-deposition annealing are investigated. Most significant has been the growth and characterization of vertically aligned hexagonal phase (or 4H-like) SiC nanowires grown on commercially available 4H-SiC (0001). The studies presented in this thesis tackle issues in SiC metallization and nanowire growth in efforts to expand the versatility of SiC as a material platform for novel devices.
Download or read book Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro and Nano electromechanical Systems written by Christopher Stephen Roper and published by . This book was released on 2007 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Single Crystal Epitaxy and Characterization of Beta Silicon Carbide written by Robert F. Davis and published by . This book was released on 1980 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Download or read book Nucleation Epitaxial Growth and Characterization of beta SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition written by JiPing Li and published by . This book was released on 1994 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates written by Joseph J. Comer and published by . This book was released on 1970 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Download or read book Growth and Characterization of Beta silicon Carbide Thin Films written by Bagher Bahavar and published by . This book was released on 1993 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition Characterization and Device Development of Monocrystalline Beta and Alpha 6H silicon Carbide Thin Films written by Hua-shuang Kong and published by . This book was released on 1988 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon written by Frederick Paul Vaccaro and published by . This book was released on 1999 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Cubic silicon carbide is a promising material for applications in high-power, high-frequency, high-temperature, and high-speed electronic devices. Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) evaluations performed on thin films grown heteroepitaxially on porous (i.e. anodized) silicon using a new chemical vapor deposition (CVD) method employing trimethylsilane confirmed that the thin films were stoichiometric, cubic silicon carbide (3C-SiC). Conclusions were drawn on the basis of comparisons with published standards as well as with results generated on reference materials. SIMS profiles revealed the growth rates at approximately 1150̊C to vary from 2.1 to 4.0 Å/min. depending upon the slight variations in the CVD process trimethylsilane gas pressure. AFM evaluations revealed that the deposition mode at short deposition times was homo-oriented island nucleation and growth but that the 3C-SiC thin films evolved into continuous terraced layers at longer deposition times. Heterojunction (pn) junction diodes, fabricated from CVD and chemical vapor converted (CVC) porous silicon specimens, displayed world record breakdown voltages as high as 140 volts and 150 volts respectively. Historically, heterojunction (pn) junction diodes fabricated from 3C-SiC thin film specimens deposited on non-anodized displayed breakdown voltages below 10 to 20 volts.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Polycrystalline Silicon and Microcrystalline Silicon Carbide Thin Films Using ECR PECVD written by Bryan Kent Oliver and published by . This book was released on 1999 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.
Download or read book Growth and Characterization of Silicon Carbide on AIN Si written by John H. Goldsmith and published by . This book was released on 2008 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial silicon carbide (SiC) was grown using chemical vapor deposition (CVD) on silicon substrates with Aluminum Nitride (AIN) buffer layers. Subsequent films where characterized by Raman Spectroscopy, Scanning Electron microscopy, Atomic Force microscopy, and X-ray diffraction. There is a large lattice mismatch between SiC and silicon, by introducing an AIN buffer layer, which has a close lattice match to SiC, the strain on the film is reduced and hence the density of defects is reduced. Trimethylsilane, an relatively inert alternative to silane, was used as the precursor providing both the required silicon and carbon atoms.
Download or read book Epitaxial Growth of Beta silicon Carbide Thin Films by the Chemical Vapor Deposition Technique written by Hai-pyng Peter Liaw and published by . This book was released on 1983 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition of beta SiC Thin Films on Si 100 in a Hot Wall Reactor written by Chienchia Chiu and published by . This book was released on 1994 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth of Beta Silicon Cardide B SiC by the Reduced Pressure Chemical Vapor Deposition Method and Its Characterization written by Angela Jones and published by . This book was released on 1989 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
