Download or read book The Gettering of Metals in Silicon to Defects Induced by Ion Implantation written by Yin-Yin Jennifer Wong Leung and published by . This book was released on 1997 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Download or read book Gettering of Metallic Impurities with Implanted Carbon in Silicon written by Hing Wong and published by . This book was released on 1989 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Impurities in Silicon and Germanium Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Gettering of Transition Metals by Cavities in Silicon Formed by Helium Ion Implantation written by and published by . This book was released on 1996 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have recently completed studies which quantitatively characterize the ability of nanometer-size cavities formed by He ion implantation to getter detrimental metal impurities in Si. Cavity microstructures formed in Si by ion implantation of He and subsequent annealing have been found to capture metal impurities by two mechanisms: (1) chemisorption on internal walls at low concentrations and (2) silicide precipitation at concentrations exceeding the solid solubility. Experiments utilizing ion-beam analysis, cross-sectional transmission electron microscopy, and secondary ion mass spectrometry were performed to quantitatively characterize the gettering effects and to determine the free energies associated with the chemisorbed metal atoms as a function of temperature. Mathematical models utilizing these results have been developed to predict gettering behavior.
Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon written by Paul Siffert and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Metal Impurities in Silicon Device Fabrication written by Klaus Graff and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt: This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.
Download or read book High Purity Silicon VI written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2000 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: "... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gettering Defects in Semiconductors written by Victor A. Perevostchikov and published by Springer Science & Business Media. This book was released on 2005-09-15 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Download or read book Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors written by Diane P. Hickey and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage in Si and Ge was produced by Si implantation at 40 keV to a dose of 1 x 1014 cm−2 and 1 x 1015 cm−2, and amorphizing damage in diamond was produced by Si implantation at 1 MeV to a dose of 3 and 7 x 1015 cm−2. All implants were carried out at room temperature. For non-amorphizing implants (1014 Si+ cm−2) into Ge, dot-like defects formed immediately upon implantation and were stable up to temperatures of 650 °C. The activation energy of these defects was determined to be approximately 0.2 " 0.1 eV. For amorphizing implants (1015 Si+ cm−2) into Ge and upon solid-phase epitaxial regrowth, the same types of defects seen in Si were also seen in Ge. However, in Ge, the end-of-range defects were the least stable, dissolving at temperatures around 650 °C. The activation energy for the dissolution of end-of-range defects in Ge is approximately 0.4 " 0.1 eV. For diamond, non-amorphizing Si+ implantation (
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
