Download or read book The Controlled Growth of Liquid Phase Epitaxial Gallium Arsenide Layers written by Michael Emmanuel Lee and published by . This book was released on 1978 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Controlled Growth of Thin GaAs Layers by Liquid Phase Epitaxy for Microwave Field Effect Transistors written by Hadis Morkoç and published by . This book was released on 1976 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Gallium Arsenide Layers Using Liquid Phase Epitaxy written by William R. Nance and published by . This book was released on 1978 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Influence of Defects and Growth Paramenters on the Electrical and Optical Properties of Liquid Phase Epitaxial Gallium Arsenide Layers written by Andrew William Ralph Leitch and published by . This book was released on 1980 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Recent Advances in the Growth of Epitaxial Gallium Arsenide written by Kenneth L. Klohn and published by . This book was released on 1971 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).

Download or read book Transport Mechanisms in Liquid Phase Epitaxial Growth of Gallium Arsenide written by Stephen Ingalls Long and published by . This book was released on 1974 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract).

Download or read book Current Controlled Liquid Phase Epitaxial Growth of GaAs written by Salem Omar Issa and published by . This book was released on 1977 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterisation of Liquid Phase Epitaxial Gallium Arsenide written by D. Alexiev and published by . This book was released on 1990 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxial Growth of Constant Composition Indium Gallium Arsenide Phosphide Layers written by Louis Walter Cook and published by . This book was released on 1981 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.

Download or read book The Influence of Defects and Growth Parameters on the Electrical and Optical Properties of Liquid Phase Epitaxial Gallium Arsenide Layers written by Andrew William Ralph Leitch and published by . This book was released on 1980 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Liquid Phase Epitaxial Growth Of Gallium Arsenide And Aluminium Gallium Arsenide For Double Heterostructure Laser Diodes written by Standen Nigel Douglas and published by . This book was released on 1988 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Gallium Arsenide Grown by Conventional and Current controlled Liquid Phase Epitaxy written by Ronald Paul Gale and published by . This book was released on 1978 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book On the Growth of Thin Liquid Phase Epitaxial GaAs Layers on Semi insulating GaAs written by Vincent John Watters and published by . This book was released on 1985 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Crystal Growth written by E. Lendvay and published by Trans Tech Publications Ltd. This book was released on 1991-01-01 with total page 979 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990