Download or read book The Appearance of Vacancies During Cu and Zn Diffusion in III V Compound Semiconductors written by Mohamed Elsayed and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs and GaN are currently most important III-V compound semiconductors. They are used to produce a variety of optoelectronic devices because of their electronic properties and direct band gap. They also represent the basic materials of semiconductor lasers. These materials have superior properties compared with the elemental semiconductors such as silicon. The semiconductor devices are almost manufactured during heat treatment processes, which entails that some diffusion must take place during their fabrication. Thus, understanding the process of dopant diffusion is of great importance to keep control over the technology. The point defects in the material play an important role in determining and shaping its properties. The work aims to identify the defect properties during Cu and Zn diffusion in GaAs and GaN using positron annihilation spectroscopy (PAS) and whether the results agree with the diffusion mechanisms. A combination of positron lifetime spectroscopy (PALS) and coincidence Doppler broadening spectroscopy (CDBS) with a theoretical calculation of annihilation parameters was used for defect identification. Thermodynamics considerations especially the As vapor pressure-dependent defect concentration helped in the identification of defects. As vacancy complexes were identified in both semi-insulating and Zndoped GaAs whereas Ga vacancies decorated with copper in Te-doped GaAs are characterized during Cu diffusion. As-vacancy neighbored with Zn is identified in Zn-diffused GaAs. The defects are found to be present up to the same depth of the diffused impurities according to correlation between the results of variable energy positron annihilation spectroscopy (VEPAS), lifetime spectroscopy and secondary ion mass spectroscopy (SIMS), which indicates that the observed defects are induced through the impurity diffusion. Positron spectroscopy results were found to be in a good agreement with the kick-out mechanism during Cu in-diffusion in GaAs, whereas the appearance of vacancies during Cu out-diffusion is not compatible to any of the equilibrium diffusion mechanisms. The obtained results in case of GaN suggested that Cu diffuses via kick-out mechanism.
Download or read book Interstitial substitutional Diffusion in III V Compound Semiconductors Zn in GaAs written by Chiu Hsian Ting and published by . This book was released on 1968 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Download or read book Advances in Materials Processing and Devices in III V Compound Semiconductors Volume 144 written by Devendra K. Sadana and published by Mrs Proceedings. This book was released on 1989-11-20 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Semiconductor Physics written by Karl W. Böer and published by Springer Nature. This book was released on 2023-02-02 with total page 1408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
Download or read book Auger Electron Spectroscopy written by Donald T. Hawkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 2014-05-14 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Download or read book Reliability and Failure of Electronic Materials and Devices written by Milton Ohring and published by Academic Press. This book was released on 2014-10-14 with total page 759 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1982-06-24 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
Download or read book Semiconductor Materials for Solar Photovoltaic Cells written by M. Parans Paranthaman and published by Springer. This book was released on 2015-09-16 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. · Provides a comprehensive introduction to solar PV cell materials · Reviews current and future status of solar cells with respect to cost and efficiency · Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells · Offers an in-depth account of the semiconductor material strategies and directions for further research · Features detailed tables on the world leaders in efficiency demonstrations · Edited by scientists with experience in both research and industry
Download or read book III V Semiconducting Compounds written by M. Neuberger and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant.
Download or read book Epitaxy of Semiconductors written by Udo W. Pohl and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics of III V Compounds written by Robert K. Willardson and published by . This book was released on 1968 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
