Download or read book The Analysis of High Frequency Noise in SiGe HBT written by 王士瑋 and published by . This book was released on 2005 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise Analysis and Optimization in NPN and PNP Sige Hbts written by John Cressler and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Frequency Noise Modeling and Microscopic Noise Simulation for SiGe HBT and RF CMOS written by Yan Cui and published by . This book was released on 2006 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Moreover, the RF noise physics and SiGe profile optimization for low noise are explored using microscopic noise simulation. A higher Ge gradient in a noise critical region near the EB junction, together with an unconventional Ge retrograding in the base to keep total Ge content below stability, when optimized, can lead to significant noise improvement without sacrificing peak cutoff frequency and without any significant high injection cutoff frequency rolloff degradation.
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Systematic Characterization and Modeling of SiGe HBT Low frequency Noise for RFIC Applications written by Jin Tang and published by . This book was released on 2003 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Scaling Limitations of SiGe HBT Low frequency Noise and Oscillator Phase Noise written by and published by . This book was released on 2006 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on SiGe Power HBT Design and High frequency Substrate Noise Isolation in BiCMOS Technology written by and published by . This book was released on 2008 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. Step-by-step design methodologies, end-of-chapter problems and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
Download or read book Directions for the Next Generation of MMIC Devices and Systems written by Nirod K. Das and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 1996 WRI International Symposium held in New York City, September 11-13, 1996
Download or read book High Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
Download or read book Noise in Physical Systems and 1 f Fluctuations written by Gijs Bosman and published by World Scientific. This book was released on 2001 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide. Contents: Noise in Nanoscale Devices (S Bandyopadhyay et al.); 1/f Voltage Noise Induced by Magnetic Flux Flow in Granular Superconductors (O V Gerashchenko); Low Frequency Noise Analysis of Different Types of Polysilicon Resistors (A Penarier et al.); Low Frequency Noise in CMOS Transistors: An Experimental and Comparative Study on Different Technologies (P Fantini et al.); Modeling of Current Transport and 1/f Noise in GaN Based HBTs (H Unlu); Low Frequency Noise in CdSe Thin Film Transistors (M J Deen & S Rumyanstsev); NIST Program on Relative Intensity Noise Standards for Optical Fiber Sources Near 1550 nm (G Obarski); Physical Model of the Current Noise Spectral Density Versus Dark Current in CdTe Detectors (A Imad et al.); Time and Frequency Study of RTS in Bipolar Transistors (A Penarier et al.); Neural Network Based Adaptive Processing of Electrogastrogram (S Selvan); Shot Noise as a Test of Entanglement and Nonlocality of Electrons in Mesoscopic Systems (E V Sukhorukov et al.); The Readout of Time, Continued Fractions and 1/f Noise (M Planat & J Cresson); Longitudinal and Transverse Noise of Hot Electrons in 2DEG Channels (J Liberis et al.); 1/f Noise, Intermittency and Clustering Poisson Process (F Gruneis); Noise Modeling for PDE Based Device Simulations (F Bonani & G Ghione); Methods of Slope Estimation of Noise Power Spectral Density (J Smulko); and other papers. Readership: Researchers, academics and graduate students in electrical and electronic engineering, biophysics, nanoscience, applied physics, statistical physics and semiconductor science.
Download or read book Silicon germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Download or read book Noise In Physical Systems And 1 f Fluctuations Icnf 2001 Procs Of The 16th Intl Conf written by Gijs Bosman and published by World Scientific. This book was released on 2001-08-20 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Download or read book High Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
