Download or read book Technology for SiGe Heterostructure based CMOS Devices written by Mark Albert Armstrong and published by . This book was released on 1999 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bulk silicon is currently the substrate material of choice for the manufacture of high performance digital circuits due to its highly-developed processing technology and the relatively low cost for high-quality substrates. Silicon-based MOSFETs have reached remarkable levels of performance through device scaling. However, with each technology generation, it is becoming harder and harder to improve device performance at the same pace through traditional scaling methods alone. Short-channel effects such as velocity saturation and drain-induced barrier lowering have placed an fundamental limit on the ultimate performance of bulk Si MOSFETS. One way to raise this limit is to increase the carrier mobilities in the channel. This can be done using high-mobility Si and SiGe strained-layers. Unlike III-V-based high-mobility materials, Si/SiGe strained-layers have the advantage of being largely compatible with mainstream Si processing, which is important from a financial feasibility standpoint. This thesis examines several issues related to Si/SiGe strained-layer devices and their integration into mainstream CMOS. The first part of this work strives to predict the performance leverage of high-mobility Si/ SiGe over bulk Si devices and circuits in a realistic manner. Two-dimensional hydrodynamic simulations are used to predict static device characteristics including effects of series resistance, velocity saturation and velocity overshoot. The simulations show enhanced current drive over bulk Si devices at 0.2 [mu]m effective channel length and highlight the importance of velocity overshoot in high-mobility submicron devices. The circuit performance of Si/SiGe devices is determined from transient simulations of CMOS ring oscillators including the effects of parasitic capacitance and drain-to-source voltage at the onset of saturation Vds.sat. The simulations show a 4 to 6-fold reduction in power-delay product as compared to bulk CMOS oscillators operated at 2.5 V with the same design rules. The remainder of the thesis focuses on the fabrication and characterization of strained-Si NMOS devices. The vehicle for this work is a novel short-flow, single-mask MOSFET which can be fabbed in as little as a week. This device is superior to simple Hall mobility structures which suffer from leakage through the substrate, an inability to control the. carrier concentration and the uncertainty associated with the Hall scattering factor. I investigate a novel buried-channel strained-Si NMOS structure incorporating an n-type donor layer beneath the strained-Si channel to encourage occupation of the buried channel and increase the overall mobility. Peak mobility in a structure without a donor layer reproduces the best results in the literature for buried-channel strained-Si NMOS devices. For structures with donor layers, Coulomb scattering from charges in the donor layer eradicates any benefit from increased buried-channel occupation. I also investigate the effect of well implants on the mobility of surface . channel strained-Si NMOS devices. Similar to the universal mobility curve in bulk Si, mobility at low perpendicular electric field degrades with increasing implant dose while high field mobility is unaffected. The mobility is largely unaffected by a neutral implant species at the same dose. This leads to the conclusion that the material quality of the strained-layer is not affected by the implant, and that the mobility degradation is due solely to increased ionized impurity scattering.

Download or read book SiGe materials Processing and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Applications of Si SiGe heterostructures to CMOS devices written by Roslina Mohd Sidek and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modelling and Simulation of Si SiGe Heterostructure Devices written by Norulhuda Abd Rasheid and published by . This book was released on 2002 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Complemetary metal-oxide-semiconductor (CMOS) is currently the most dominant technology used in making integrated systems. It consists of both n-channel MOS transistor (NMOS) and p-channel MOS transistor (PMOS) fabricated on the same substrate. Conventionally, the substrate is made of silicon. Alternatively, the substrate can be made from different layer of semiconductors known as heterostructure. Much attention has been given to Si/SiGe due to its compatibility with silicon and the higher carrier mobilities. SiGe is an alloy which is said to be an alternative solution to the problem of a down-scaled CMOS to produce high speed device. This work consists of modeling three different of Si/SiGe heterostructure substrates which are used to construct n- and p-channel MOSFETs and later to construct CMOS inverter. The three types of heterostructures are a strained SiGe on silicon substrate, a strained silicon on relaxed SiGe/Si substrate and a strained SiGe on strained Si/relaxed layers of SiGe/Si substrate. A device simulator, Avanti MEDICI Version 1999.2 is used in this project. Although it has heterojunction capability, it does not support model for a strained Si. This work also highlights the method to simulate Si/SiGe heterostructures containing strained layer using MEDICI. Simulations on the band structure and current-voltage (I-V) characteristics of the MOSFETs are carried out. The Id-Vg and Id-Vd are simulated for different value of Ge% and mobility. This is to observe the effect of varying the value of Ge% and mobility used in the design. The simulation on the CMOS inverter as the fundamental circuit is carried out to obtain the transfer curve. The noise margin and switching characteristics can be extracted from the transfer curve. All the simulated results are then compared with the Si bulk, the analyses show that the performance of the Si/SiGe heterostructures is better in terms of the electrical characteristics of the MOSFETs and the switching characteristics of the CMOS inverter, as compared to the performance of the Si bulk.

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Download or read book Silicon Quantum Integrated Circuits written by E. Kasper and published by Springer Science & Business Media. This book was released on 2005-12-11 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Download or read book Si SiGe Heterostructures written by Sung-Yong Chung and published by . This book was released on 2005 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: With the advent of the first transistor in 1947, the integrated circuit (IC) industry has rapidly expanded with the tremendous advances in the development of IC technology. The driving force in the evolution of IC technology is the reduction of transistor sizes. Without a doubt, transistor miniaturization will face fundamental physical limitations imposed by further dimensional scaling of silicon transistors in the near future. According to the 2004 International Technology Roadmap for Semiconductors (ITRS), the width of a gate electrode for complementary metal-oxide-semiconductor (CMOS) is projected to be a mere 7 nm by the end of 2018. No further solutions have been found. Since the 2001 ITRS, tunneling devices have been evaluated as an emerging technology to augment silicon CMOS. Transistor circuitry incorporating tunneling devices realized using III-V semiconductors has exhibited superior performance over its transistor-only counterparts. However, due to fundamental differences in material properties, such technology is not readily compatible with the mainstream platforms (>95% market share of semiconductors) of CMOS and HBT technologies. Recently, we demonstrated the successful monolithic integration of Si-based resonant interband tunnel diodes (RITDs) with CMOS and SiGe HBT, which makes them more attractive than III-V based tunnel diodes for system level integration. This dissertation is concerned with the development of quantum functional tunneling devices, RITDs, and high-speed transistors, HBTs, using Si/SiGe heterostructures as well as material growth and electrical properties of Si/SiGe heterostructures. Emphasis is placed on the development of Si/SiGe-based RITDs, HBTs, and their monolithic integration for 3-terminal negative differential resistance (NDR) devices. The operating principles of Si-based RITDs and the integration of RITD with HBT are also discussed.

Download or read book Circuits and Applications Using Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Download or read book Strained Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

Download or read book Circuits and Applications Using Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Download or read book Scaling And Integration Of High speed Electronics And Optomechanical Systems written by Magnus Willander and published by World Scientific. This book was released on 2017-04-17 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

Download or read book CMOS Past Present and Future written by Henry Radamson and published by Woodhead Publishing. This book was released on 2018-04-03 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. Addresses challenges and opportunities for the use of CMOS Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities