Download or read book Technology development of 3D silicon plasma etching processes for novel devices and applications written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.
Download or read book Plasma Etching Processes for CMOS Devices Realization written by Nicolas Posseme and published by Elsevier. This book was released on 2017-01-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm
Download or read book Plasma Etching in Semiconductor Fabrication written by Russ A. Morgan and published by North-Holland. This book was released on 1985-01-01 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hardbound. This book is based on a post-graduate study carried out by the author on plasma etching mechanisms of semiconductor materials such as silicon, silicon dioxide, photoresist and aluminium films used in integrated circuit fabrication. In this book he gives an extensive review of the chemistry of dry etching, sustaining mechanisms and reactor architecture. He also describes a study made on the measurement of the electrical characteristics and ionization conditions existing in a planar reactor. In addition, practical problems such as photoresist mask erosion have been investigated and the reader will find the photoresist chemistry very useful. The book contains a great deal of practical information on plasma etching processes. The electronics industry is continually seeking ways to improve the miniaturization of devices, and this account of the author's findings should be a useful contribution to the work of miniaturization.
Download or read book Plasma Etching Processes for Sub quarter Micron Devices written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High density Plasma Etching of III nitrides written by Rajwinder Singh and published by . This book was released on 2003 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Processing written by Thorsten Lill and published by John Wiley & Sons. This book was released on 2021-06-28 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn about fundamental and advanced topics in etching with this practical guide Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching. The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology. Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from: A complete discussion of the fundamentals of how to remove atoms from various surfaces An examination of emerging etching technologies, including laser and electron beam assisted etching A treatment of process control in etching technology and the role played by artificial intelligence Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.
Download or read book Plasma Etching Processes for Interconnect Realization in VLSI written by Nicolas Posseme and published by Elsevier. This book was released on 2015-04-14 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes
Download or read book Dry Etching for VLSI written by A.J. van Roosmalen and published by Springer Science & Business Media. This book was released on 1991-03-31 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
Download or read book Dry Etching for Microelectronics written by Ronald A. Powell and published by North-Holland. This book was released on 1984 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Download or read book High Density Plasma Etching of Group III Nitride Films for Device Application written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.
Download or read book Handbook of 3D Integration Volume 1 written by Philip Garrou and published by John Wiley & Sons. This book was released on 2011-09-22 with total page 798 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.
Download or read book Nano and Microfabrication for Industrial and Biomedical Applications written by Regina Luttge and published by William Andrew. This book was released on 2016-06-12 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nano- and Microfabrication for Industrial and Biomedical Applications, Second Edition, focuses on the industrial perspective on micro- and nanofabrication methods, including large-scale manufacturing, the transfer of concepts from lab to factory, process tolerance, yield, robustness, and cost. The book gives a history of miniaturization and micro- and nanofabrication, and surveys industrial fields of application, illustrating fabrication processes of relevant micro and nano devices. In this second edition, a new focus area is nanoengineering as an important driver for the rise of novel applications by integrating bio-nanofabrication into microsystems. In addition, new material covers lithographic mould fabrication for soft-lithography, nanolithography techniques, corner lithography, advances in nanosensing, and the developing field of advanced functional materials. Luttge also explores the view that micro- and nanofabrication will be the key driver for a "tech-revolution" in biology and medical research that includes a new case study that covers the developing organ-on-chip concept. Presents an interdisciplinary approach that makes micro/nanofabrication accessible equally to engineers and those with a life science background, both in academic settings and commercial R&D Provides readers with guidelines for assessing the commercial potential of any new technology based on micro/nanofabrication, thus reducing the investment risk Updated edition presents nanoengineering as an important driver for the rise of novel applications by integrating bio-nanofabrication into microsystems
Download or read book Plasma Etching written by and published by . This book was released on 1998 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching written by Dennis M. Manos and published by . This book was released on 1989 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fast Scatterometric Measurement of Periodic Surface Structures Plasma etching Processes written by Wolfgang Matthias Klesse and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: To satisfy the continuous demand of ever smaller feature sizes, plasma etching technologies in microelectronics processing enable the fabrication of device structures with dimensions in the nanometer range. In a typical plasma etching system a plasma phase of a selected etching gas is activated, thereby generating highly energetic and reactive gas species which ultimately etch the substrate surface. Such dry etching processes are highly complex and require careful adjustment of many process parameters to meet the high technology requirements on the structure geometry. In this context, real-time access of the structure's dimensions during the actual plasma process would be of great benefit by providing full dimension control and film integrity in real-time. In this paper, we evaluate the feasibility of reconstructing the etched dimensions with nanometer precision from reflectivity spectra of the etched surface, which are measured in real-time throughout the entire etch process. We develop and test a novel and fast reconstruction algorithm, using experimental reflection spectra taken about every second during the etch process of a periodic 2D model structure etched into a silicon substrate. Unfortunately, the numerical simulation of the reflectivity by Maxwell solvers is time consuming since it requires separate time-harmonic computations for each wavelength of the spectrum. To reduce the computing time, we propose that a library of spectra should be generated before the etching process. Each spectrum should correspond to a vector of geometry parameters s.t. the vector components scan the possible range of parameter values for the geometrical dimensions. We demonstrate that by replacing the numerically simulated spectra in the reconstruction algorithm by spectra interpolated from the library, it is possible to compute the geometry parameters in times less than a second. Finally, to also reduce memory size and computing time for the library, we reduce the scanning of the parameter values to a sparse grid.
Download or read book Hydrogen based Plasma Etch of Copper at Low Temperature written by Fangyu Wu and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Although copper (Cu) is the preferred interconnect material due to its lower resistivity than aluminum (Al), Cu subtractive etching processes have not been developed at temperatures less than 180 °C, primarily due to the inability to form volatile etch products at low temperature. The conventional damascene technology avoids the need for subtractive etching of Cu by electroplating Cu into previously etched dielectric trenches/vias, followed by a chemical/mechanical planarization (CMP) process. However, a critical "size effect" limitation has arisen for damascene technology as a result of the continuing efforts to adhere to "Moore's Law". The size effect relates to the fact that the resistivity of damascene-generated lines increases dramatically as the line width approaches the sub-100 nm regime, where feature size is similar to the mean free path of electrons in Cu (40 nm). As a result, an alternative Cu patterning process to that of damascene may offer advantages for device speed and thus operation. This thesis describes investigations into the development of novel, fully-plasma based etch processes for Cu at low temperatures (10 °C). Initially, the investigation of a two-step etch process has been studied. This etch approach was based on a previous thermodynamic analysis of the Cu-Cl-H system by investigators at the University of Florida. In the first step, Cu films are exposed to a Cl2 plasma to preferentially form CuCl2, which is believed to be volatilized as Cu3Cl3 by subsequent exposure to a hydrogen (H2) plasma (second step). Patterning of Cu films masked with silicon dioxide (SiO2) layers in an inductively coupled plasma (ICP) reactor indicates that the H2 plasma step in the two-step process is the limiting step in the etch process. This discovery led to the investigation of a single step Cu etch process using a pure H2 plasma. Etching of blanket Cu films and Cu film patterning at 10°C, display an etch rate ~ 13 nm/min; anisotropic etched features are also observed. Comparison of H2 plasma etching to sputtering of Cu films in argon (Ar) plasmas, indicates that both a chemical component and a physical component are involved in the etching mechanism. Additional studies using helium plasmas and variation of power applied to the plasma and etching surface demonstrate that the etch rate is controlled by reactive hydrogen species, ion bombardment flux and likely photon flux. Optical Emission Spectroscopy (OES) of the H2 plasma during the Cu etching process detects Cu emission lines, but is unable to identify specific Cu etch products that desorb from the etching surface. Variation of Cu etch rates as a function of temperature suggests a change in mechanism for the removal of Cu over the temperature of -150 °C to 150 °C. OES analyses also suggest that the Cl2 plasma step in the two-step process can inhibit Cu etching, since the subsequent H2 (second) plasma step shows a time delay in film removal. Preliminary results of the etching of the SiO2 mask material in H2 plasmas with various intentionally introduced contaminants demonstrate the robustness of the H2 plasma Cu etch process.
