Download or read book Synthesis and Characterization of Silicon Nitride Film Deposited by Plasma Enhanced Chemical Vapor Deposition from Ditertiary butyl Silane written by Kei-Turng Shih and published by . This book was released on 1991 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis and Characterization of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane written by Yanyao Yu and published by . This book was released on 1993 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the though that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemi nation. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 37 (thesis year 1992) a total of 12,549 thesis titles from 25 Canadian and 153 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 37 reports theses submitted in 1992, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Download or read book Silicon Nitride for Microelectronic Applications written by John T. Milek and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation • 5 Introduction • 5 Direct Nitridation Method 8 Evaporation Method • 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.
Download or read book Microwave Plasma enhanced Chemical Vapor Deposition and Characterization of Diamond and Silicon Nitride Thin Films written by Kevin John Grannen and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Enhanced Chemical Vapor Depostion of Fluorinated Silicon Nitride written by Rhett Eugene Livengood and published by . This book was released on 1987 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma enhanced Chemical Vapor Deposition of Silicon Nitride from 1 1 3 3 5 5 hexamethylcyclotrisilazane written by Todd Alan Brooks and published by . This book was released on 1988 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Memory Quality Silicon Nitride Deposited by Plasma enhanced Chemical Vapor Deposition written by Muhammad Abdul Khaliq and published by . This book was released on 1988 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide written by Lan Chen and published by . This book was released on 1995 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma enhanced Chemical Vapor Deposition of Silicon Oxynitrides written by Joseph Edward Schoenholtz and published by . This book was released on 1986 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Assisted Synthesis and Physical Chemical Characterization of Titanium Nitride Films written by Michael Robert Hilton and published by . This book was released on 1987 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering written by Tuomas Hänninen and published by Linköping University Electronic Press. This book was released on 2018-02-13 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C2H2) in addition to N2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated. The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N2/Ar flow ratios of 0.3 and above. These films showed Si-N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si–Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature below 200 °C, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V. The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si–Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, namely the refractive index and extinction coefficient, were shown to depend on the film chemical bonding, with the stoichiometric films displaying optical properties falling between those of silicon oxide and silicon nitride. The properties of silicon carbonitride films were greatly influenced by the synthesis method. The films deposited by HiPIMS using acetylene as the carbon source showed silicon nitride-like mechanical properties, such as a hardness of ~ 20 GPa and compressive residual stresses of 1.7 – 1.9 GPa, up to film carbon contents of 30 at.%. At larger film carbon contents the films had increasingly amorphous carbon-like properties, such as densities below 2 g/cm3 and hardnesses below 10 GPa. The films with more than 30 at.% carbon also showed columnar morphologies in cross-sectional scanning electron microscopy, whereas films with lower carbon content showed dense morphologies. Due to the use of acetylene the carbonitride films contained hydrogen, up to ~ 15 at.%. The co-sputtered silicon carbonitride films showed a layered SiNx/CNx structure. The hardness of these films increased with the film carbon content, reaching a maximum of 18 GPa at a film carbon content of 12 at.%. Comparatively hard and low stressed films were grown by co-sputtering using a C target power of 1200 W for a C content around 12 at.%, a negative substrate bias less than 100 V, and a substrate temperature up to 340 °C.
Download or read book Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition Using Ditertiarybutylsilane and Oxygen written by Sung-Jun Lee and published by . This book was released on 1996 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characteristics of Silicon Nitride Deposited by VHF 162 MHz plasma Enhanced Chemical Vapor Deposition Using a Multi tile Push pull Plasma Source written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN x layers were deposited with a gas mixture of NH3 /SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3 /SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3 N4 layer with very low Si–H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18 × 10 −4 g (m 2 · d) −1, in addition to an optical transmittance of higher than 90%.
Download or read book Structural Optical and Mechanical Properties of Silicon Nitride Films Deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition written by Ezgi Abacıoğlu and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Deposited Silicon Nitride Film Chemistry written by Justin Nien-Cheh Chiang and published by . This book was released on 1989 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
