Download or read book Study of Silicon Carbide Buried Gate Junction Field Effect Transistor and Related Devices for High Temperature Applications written by Lisa V. Rozario and published by . This book was released on 1997 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Download or read book Amorphous and Crystalline Silicon Carbide II written by Mahmud M. Rahman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Download or read book Silicon Carbide III nitrides and Related Materials written by Gerhard Pensl and published by . This book was released on 1998 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1998 Fourth International High Temperature Electronics Conference written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1998 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: These papers discuss the need for and status of high temperature electronics development with particular reference to semiconductor materials, devices and applications, passive components, ohmic contacts and metallizations, testing at high temperatures, and thermal management.
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Silicon Carbide Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Download or read book Materials for High Temperature Semiconductor Devices written by Committee on Materials for High-Temperature Semiconductor Devices and published by National Academies Press. This book was released on 1995-09-28 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Download or read book Study Development and Application of Techniques Necessary to Fabricate Active Silicon Carbide Devices written by HUNG-CHI. CHANG and published by . This book was released on 1960 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: FUNDAMENTAL TECHNIQUES WERE DEVELOPED FOR THE FABRICATION OF SIC DEVICES IN GENERAL AND UNIPOLAR FIELD-EFFECT TRANSISTORS IN PARTICULAR. THE DIFFUSION OF AL VAPOR IN ALPHA-SIC WAS QUANTITATIVELY INVESTIGATED AND THE DIFFUSION-JUNCTION PROCESS WAS DEVELOPED. HEXAGONAL SIC WASGROWN IN THE FORM OF THIN PLATELETS WHICH ARE READY FOR DEVICE FABRICATION. DEVICE FABRICATION PROCESSES INCLUDE THE SINGLE-AND DOUBLE-GATE FUSED JUNCTIONS, SINGLE-GATE GROWN JUNCTIONS, AND SINGLEAND DOUBLE-GATE DIFFUSED JUNCTIONS. ONLY THE DOUBLE-GATE DIFFUSED JUNCTION PROCESS PRODUCED UNIPOLAR TRANSISTORS WHICH EXHIBIT POWER GAIN. THESE DEVICES ARE STILL IN A PRIMITIVE STAGE OF DEVELOPMENT AND WILL REQUIRE FURTHER DEVELOPMENT BEFORE THEY BECOME PRACTICAL DEVICES. AN EXPERI-MENTAL MODEL OF A SIC DOUBLE-GATE UNIPOLAR TRAN-SISTOR WAS DEVELOPED THAT EXHIBITED AC POWER GAIN AS HIGH AS 380 AT ROOM TEMPERATURE AND 7 AT 500 C.
Download or read book Field Effect Transistor Applications written by William Gosling and published by . This book was released on 1964 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book Development and Operation of Buried Channel Charge Coupled Devices in 6H Silicon Carbide written by Scott T. Sheppard and published by . This book was released on 1996 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "Silicon carbide is a wide bandgap semiconductor that is well suited for high power, high temperature electronic devices due to its remarkable electronic and thermal properties. Photosensitive devices in the 6H polytype of SiC have also been demonstrated, showing high sensitivity in ultraviolet wavelengths near 270 nm. Furthermore, the native oxide on SiC is silicon dioxide, meaning that SiC can be thermally oxidized to form a high quality gate dielectric, making metal-oxide- semiconductor (MOS) devices possible. These qualities make silicon carbide ideal for constructing UV sensitive CCD imagers. This work investigates the feasibility for developing imagers in SiC through the fabrication and demonstration of a buried channel CCD linear shift array. Several elements of the MOS field effect family were studied. With careful surface preparation and device processing techniques, SiC/silicon-dioxide interfaces have been ameliorated to achieve surface state densities below 2e11 per-centimeters-squared and electron surface mobilities above 40 centimeters-squared-per-volt-second. Buried channel MOSFETs were fabricated with ion implantation of nitrogen at elevated temperatures and have functioned with electron mobilities in excess of 180 centimeters- squared-per-volt-second, which shows an advantage of using the buried channel structure. Studies of capacitance characteristics of the buried channel devices hold good agreement with a general one-dimensional depletion model. A double polysilicon level, overlapping gate process was adapted to the Sic/MOS system. A four phase buried channel CCD shift register was built and operated in the pseudo-two phase configuration at room temperature. Device clocking frequencies were limited to 30 kHz by slow charge readout techniques, but higher speeds have been estimated. In this frequency range, charge transfer efficiencies were probably dominated by carrier trapping in bulk states, which may be present due to ion implantation. Recommendations for improvement of device performance and methods of integrating the CCD with UV photodetectors are given."
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2710 pages. Available in PDF, EPUB and Kindle. Book excerpt:
