Download or read book Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy written by Ding-Yuan Samuel Day and published by . This book was released on 1980 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deel levels in the GaAs-GaP system. Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach. A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems . It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77 K and 300 K.
Download or read book Analysis of Electron Traps in Silicon and Gallium Arsenide by Deep level Transient Spectroscopy written by Ruthanna Yusa DeJule and published by . This book was released on 1982 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep level Transient Spectroscopy Studies of Gallium Arsenide Aluminum Gallium Arsenide Heterostructures and Superlattices written by Paul Alan Martin and published by . This book was released on 1986 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of two projects. First, the feasibility of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAS-AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS. Deep-level transient spectroscopy is reviewed, as are theoretical and experimental attempts to predict and measure band offsets. A theory of electron capture into and emission out of quantum wells in response to pulsed bias is developed. DLTS studies of GaAs AlGaAs quantum-well structures are presented and compared with the results of previous studies of defects in MOCVD GaAs and AlGaAs. Emission of electrons out of the GaAs quantum well is observed, but at emission rates in excess of those predicted by thermionic emission or by phonon assisted tunneling. In the absence of a model for the emission process, meaningful data for band-edge discontinuities cannot be extracted from the measured emission rates. Further characterization of the emission process would be of great value in the development of devices based on heterojunction technology. Data are also presented from a DLTS study of defect states in GaAs - AlGaAs superlattices Doubling the layer thickness from 50 to 100 A resulted in a dramatic change in the defects observed. This is accounted for by the presence of a conducting miniband in one super-lattice and its absence in the other.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1983 with total page 1368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
Download or read book Deep Level Trap Spectroscopy of Gallium Arsenide written by Clarence E. Mayo and published by . This book was released on 1978 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping states in epitaxial GaAs induced by 1 MeV electron irradiation were measured by transient capacitance. N-type epitaxial GaAs samples with buffer layer were irradiated at room temperature with 1 MeV electrons, at doses ranging from 10 to the 14th power/sq.cm to 10 to the 16th power/sq.cm. Carrier removal, changes of concentration profile, diode behavior, and C-V characteristics were measured as a function of electron dose. Transient capacitance spectroscopy techniques were used to measure deep trapping levels between 4 K and 450 K. Concentrations of trapping states as a function of electron dose were measured and related to the carrier concentration measurements. The usual electron-induced trapping states with significant variations were noted. Variations of spatial depth of the traps as a function of irradiation and thermal cycling were observed. Samples were in the form of FET test patterns for correlation of material properties and device performance. (Author).
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by . This book was released on 1997 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy of Gallium Arsenide written by M. Henini and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies on the Structure of the Donor related Deep Level and Strain induced Effect in Gallium Arsenide and Aluminum Gallium Arsenide written by Zhiguo Wang and published by . This book was released on 1992 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterisation of Gallium Arsenide Using Deep Level Transient Spectroscopy written by D. A. Allan and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index Keyword A L written by and published by . This book was released on 1983 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy written by Joseph A. Bruening and published by . This book was released on 1993 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Download or read book Cumulative Subject and Author Index Including Tables of Contents Volumes 1 50 written by and published by Academic Press. This book was released on 1998-09-15 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
