Download or read book Studies of Deep Levels in Semi insulating Gallium Arsenide written by Chin Che Tin and published by . This book was released on 1987 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies of Deep Levels in Semi insulating Gallium Arsenide by Photoluminescence and Photoluminescence Excitation Spectroscopy written by Yeh-Jen Kao and published by . This book was released on 1991 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Deep Levels in Semi insulating Liquid encapsulated Czochralski grown Gallium Arsenide by Photo induced Transient Spectroscopy written by Michael Robert Burd and published by . This book was released on 1984 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semi insulating Gallium Arsenide deep Trapping Levels Dislocations and Backgating written by Wade Wai Chung Tang and published by . This book was released on 1984 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Photoresponse of Semi insulating Gallium Arsenide written by Gerhard Schumm and published by . This book was released on 1985 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoresponse behavior of semi-insulating GaAs is investigated. The photocarrier lifetime is discussed and the influence of surface and contact recombination is taken into account. Photocurrent-voltage characteristics have been measured and a mechanism for the gain in terms of space charge amplification and avalanching is suggested. The influence of deep level traps on the photoresponse of semi-insulating GaAs is investigated. Furthermore, the photocurrent-temperature dependence is studied and a strong increase of photocurrent below 160 K is reported.
Download or read book Gallium Arsenide And Related Compounds Proceedings Of The 3rd International Workshop written by Pier Giovanni Pelfer and published by World Scientific. This book was released on 1996-02-09 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Download or read book Development of Deep level Photo thermal Spectroscopy and Photo Carrier Radiometry for the Characterization of Semi insulating Gallium Arsenide SI GaAs written by Jun Xia and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semi-insulating gallium arsenide (SI-GaAs) has gained great interest in recent years due to its wide application in optoelectronic devices and high-speed integrated circuits. An important feature of SI-GaAs is the high density of deep-level defect states, which control the electrical properties of the substrate by compensating the shallow defects. Over the years, deep-level transient spectroscopy (DLTS) and its variations have been the most effective tools employed for the characterization of deep-level defects. However, most of these techniques require a contact probe and tend to be quite restrictive in their applications' scope. In this thesis deep-level photo-thermal spectroscopy (DLPTS), an all-optical rate-window-based technique, is presented as a novel noncontact technique for the characterization of deep-level defects in SI-GaAs. The signal-generation mechanism for DLPTS is the super-bandgap excitation of carriers, and the sub-bandgap detection of the defect's thermal-emission process. Combined with the rate-window detection utilizing lock-in amplifiers, DLPTS measurements are performed in three different modalities: temperature-scan, pulse-rate scan, and time-scan. This work demonstrates that each mode provides unique information about the defect configuration, and, in combination, the modes offer a powerful tool for the study of defect properties and optoelectronic processes in SI-GaAs. A hierarchical carrier-emission theory is proposed to explain the thermal broadening (nonexponentiality) in photo-thermal spectra. The model is studied comparatively with the Gaussian distribution of activation energies, and their similarities demonstrate an ergodic equivalence of random energy distribution and the constrained hierarchical emission process. In addition, a rate-window gated photo-carrier radiometry (PCR) technique is developed. The original diffusion-based PCR theory is modified to reflect the signal domination by trap emission and capture rates in the absence of diffusion. Defect luminescence is collected and analyzed using photo-thermal temperature spectra and resonant detection combined with frequency scans. The study results in the identification of five radiative defect states and the defect-photoluminescence quantum efficiency.
Download or read book The Investigation of Semi insulating Gallium Arsenide Bulk Material for Use in Room Temperature Charged Particle and Gamma Ray Spectroscopy written by Douglas Scott McGregor and published by . This book was released on 1993 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Download or read book Theoretical Studies of Semi insulating Vanadium doped Gallium Arsenide written by A. F. Labadz and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Impurity States in Gallium Arsenide written by Claude M. Penchina and published by . This book was released on 1981 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have studied opto-electronic properties of semi-insulating gallium arsenide, including oxygen doped, chromium doped, undoped, and ion-bombarded materials. We have found that the luminescence from chromium-doped samples has much find structure which had not been previously seen; this led to a better understanding of chromium complexing and of local lattice vibration and Fano anti-resonance at a substitutional Cr site. We have identified two other luminescence bands as related to oxygen and native defects respectively. Photoconductivity and photo-Hall studies have elucidated some of the optical transitions and showed evidence that much of the spectral shape is due to quenching effects. DLTS and thermally-stimulated current measurements were used to study oxygen doped and 'undoped' semi-insulating GaAs, revealing a variety of deep and medium-deep levels. A combination of theory and experiment has proved valuable to the understanding of the photoionization cross sections, Fano anti-resonance, and local mode coupling of the deep impurity states. (Author).
Download or read book Characterisation of Deep Levels in Undoped Semi insulating Liquid Encapsulated Czochralski Gallium Arsenide written by J. S. Pooni and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defective states in semi insulating gallium arsenide substrates written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integrated circuits. However, the performance of the above devices may be significantly affected by the substrate quality, i.e. crystal defects and related deep levels. Consequently, a careful characterization of substrates is mandatory to improve both device performance and production yields. In this work we have investigated gallium arsenide substrates from different suppliers and/or differently processed. To these substrates we have applied, discussed and compared different methodologies (current-voltage and capacitance-voltage characteristics as well as spectroscopic methods) to characterize the many deep levels which are either present in as-received semi-insulating substrates or induced by device processing such as ion implantation and the subsequent thermal annealing.
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1988 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
