Download or read book Structured Analog Design in Deep Sub micron Technologies Using CMOS Inverters and Current Mirrors written by Kolar Ranganathan Raghunandan and published by . This book was released on 2017 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ubiquity of mobile computing devices and the ever increasing internet usage in recent years have led to a phenomenal growth in digital data traffic and burgeoned bandwidth demands on modern digital communication systems. These systems require mixed signal circuits operating at high sampling rates and complex digital signal processing (DSP) to achieve reliable performance. Circuit designs at these break-neck speeds require high speed devices provided by advanced CMOS technologies. Since, these processes can accommodate large number of devices per unit area; there is an urge to integrate more functionality on chip to reduce overall system cost. However, this presents several design challenges, such as minimizing process variations, reducing power dissipation and managing overall design/verification time. In addition, the traditional approach to design analog and mixed signal circuits, based on operational amplifiers (OP-AMP), is difficult in these technologies due to the low power supply voltage and reduced intrinsic gain of the transistors. Therefore, using stable large-gain and negative-feedback configurations to obtain precision has limited use in designing high speed analog circuits in these processes. This necessitates an alternative methodology for designing circuits for wide band applications. This research addresses the aforementioned problems by proposing a structured design methodology for analog and mixed signal integrated circuits for high speed applications. A set of analog modules based on the class-AB CMOS inverters and current mirrors are described to perform basic operations such as addition, subtraction, scaling and integration. The design approach uses replica-circuits extensively to control the large process, voltage and temperature (PVT) variations encountered in practice. The key idea is to independently control the logical threshold (V[underscore LT]) and the trans-conductance (g[underscore m]) of the CMOS inverter using control inputs from the replica and use it as a basic building block for designing higher level blocks and systems. Using this methodology, the designs of functional blocks namely, voltage references, filters, amplifiers, gyrators, comparators, multipliers, voltage-to-time converters and oscillators are presented. Finally, the measured results for prototypes fabricated in TSMC 180nm are presented that show the performance of these blocks in silicon.

Download or read book Structured Analog CMOS Design written by Danica Stefanovic and published by Springer Science & Business Media. This book was released on 2008-10-20 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The basic design concept consists in analog cell partitioning into the basic analog structures and sizing of these basic analog structures in a predefined procedural design sequence. The procedural design sequence ensures the correct propagation of design specifications, the verification of parameter limits and the local optimization loops. The proposed design procedure is also implemented as a CAD tool that follows this book.

Download or read book Analog Design for CMOS VLSI Systems written by Franco Maloberti and published by Springer Science & Business Media. This book was released on 2006-04-18 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: - Applicable for bookstore catalogue

Download or read book Low Power Design in Deep Submicron Electronics written by W. Nebel and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power Design in Deep Submicron Electronics deals with the different aspects of low power design for deep submicron electronics at all levels of abstraction from system level to circuit level and technology. Its objective is to guide industrial and academic engineers and researchers in the selection of methods, technologies and tools and to provide a baseline for further developments. Furthermore the book has been written to serve as a textbook for postgraduate student courses. In order to achieve both goals, it is structured into different chapters each of which addresses a different phase of the design, a particular level of abstraction, a unique design style or technology. These design-related chapters are amended by motivations in Chapter 2, which presents visions both of future low power applications and technology advancements, and by some advanced case studies in Chapter 9. From the Foreword: `... This global nature of design for low power was well understood by Wolfgang Nebel and Jean Mermet when organizing the NATO workshop which is the origin of the book. They invited the best experts in the field to cover all aspects of low power design. As a result the chapters in this book are covering deep-submicron CMOS digital system design for low power in a systematic way from process technology all the way up to software design and embedded software systems. Low Power Design in Deep Submicron Electronics is an excellent guide for the practicing engineer, the researcher and the student interested in this crucial aspect of actual CMOS design. It contains about a thousand references to all aspects of the recent five years of feverish activity in this exciting aspect of design.' Hugo de Man Professor, K.U. Leuven, Belgium Senior Research Fellow, IMEC, Belgium

Download or read book Baseband Analog Circuits in Deep submicron CMOS Technologies Targeted for Mobile Multimedia written by Vijayakumar Dhanasekaran and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Three main analog circuit building blocks that are important for a mixed-signal system are investigated in this work. New building blocks with emphasis on power efficiency and compatibility with deep-submicron technology are proposed and experimental results from prototype integrated circuits are presented. Firstly, a 1.1GHz, 5th order, active-LC, Butterworth wideband equalizer that controls inter-symbol interference and provides anti-alias filtering for the subsequent analog to digital converter is presented. The equalizer design is based on a new series LC resonator biquad whose power efficiency is analytically shown to be better than a conventional Gm-C biquad. A prototype equalizer is fabricated in a standard 0.18[mu]m CMOS technology. It is experimentally verified to achieve an equalization gain programmable over a 0-23dB range, 47dB SNR and -48dB IM3 while consuming 72mW of power. This corresponds to more than 7 times improvement in power efficiency over conventional Gm-C equalizers. Secondly, a load capacitance aware compensation for 3-stage amplifiers is presented. A class-AB 16W headphone driver designed using this scheme in 130nm technology is experimentally shown to handle 1pF to 22nF capacitive load while consuming as low as 1.2mW of quiescent power. It can deliver a maximum RMS power of 20mW to the load with -84.8dB THD and 92dB peak SNR, and it occupies a small area of 0.1mm2. The power consumption is reduced by about 10 times compared to drivers that can support such a wide range of capacitive loads. Thirdly, a novel approach to design of ADC in deep-submicron technology is described. The presented technique enables the usage of time-to-digital converter (TDC) in a delta-sigma modulator in a manner that takes advantage of its high timing precision while noise-shaping the error due to its limited time resolution. A prototype ADC designed based on this deep-submicron technology friendly architecture was fabricated in a 65nm digital CMOS technology. The ADC is experimentally shown to achieve 68dB dynamic range in 20MHz signal bandwidth while consuming 10.5mW of power. It is projected to reduce power and improve speed with technology scaling.

Download or read book CMOS Analog Design Using All Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

Download or read book High Performance Deep Sub micron CMOS Device Design for Low Power Analog and Mixed Mode Applications written by Hemant Vinayak Deshpande and published by . This book was released on 2002 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS written by Behzad Razavi and published by 清华大学出版社有限公司. This book was released on 2005 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: 本书介绍了模拟电路设计的基本概念, 说明了CMOS模拟集成电路设计技术的重要作用, 描述了MOS器件的物理模型及工作特性等.

Download or read book Introduction to Analog VLSI Design Automation written by Mohammed Ismail and published by Springer. This book was released on 1990-05-31 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first authoritative work dealing with analog VLSI design automation. It provides an excellent introduction to basic design automation ideas and their applications to development of knowledge- based systems and computer-aided tools for analog VLSI circuits and systems design. Annotation copyrighted by Book News, Inc., Portland, OR

Download or read book Low Power High Resolution Analog to Digital Converters written by Amir Zjajo and published by Springer. This book was released on 2011-08-17 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. This has recently generated a great demand for low-power, low-voltage A/D converters that can be realized in a mainstream deep-submicron CMOS technology. However, the discrepancies between lithography wavelengths and circuit feature sizes are increasing. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. The inherent randomness of materials used in fabrication at nanoscopic scales means that performance will be increasingly variable, not only from die-to-die but also within each individual die. Parametric variability will be compounded by degradation in nanoscale integrated circuits resulting in instability of parameters over time, eventually leading to the development of faults. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. In an attempt to address these issues, Low-Power High-Resolution Analog-to-Digital Converters specifically focus on: i) improving the power efficiency for the high-speed, and low spurious spectral A/D conversion performance by exploring the potential of low-voltage analog design and calibration techniques, respectively, and ii) development of circuit techniques and algorithms to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover errors continuously. The feasibility of the described methods has been verified by measurements from the silicon prototypes fabricated in standard 180nm, 90nm and 65nm CMOS technology.

Download or read book Analog Integrated Circuit Design in Ultra thin Oxide CMOS Technologies with Significant Direct Tunneling induced Gate Current written by Eric Scott Bohannon and published by . This book was released on 2011 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The ability to do mixed-signal IC design in a CMOS technology has been a driving force for manufacturing personal mobile electronic products such as cellular phones, digital audio players, and personal digital assistants. As CMOS has moved to ultra-thin oxide technologies, where oxide thicknesses are less than 3 nm, this type of design has been threatened by the direct tunneling of carriers through the gate oxide. This type of tunneling, which increases exponentially with decreasing oxide thickness, is a source of MOSFET gate current. Its existence invalidates the simplifying design assumption of infinite gate resistance. Its problems are typically avoided by switching to a high-K/metal gate technology or by including a second thick(er) oxide transistor. Both of these solutions come with undesirable increases in cost due to extra mask and processing steps. Furthermore, digital circuit solutions to the problems created by direct tunneling are available, while analog circuit solutions are not. Therefore, it is desirable that analog circuit solutions exist that allow the design of mixed-signal circuits with ultra-thin oxide MOSFETs. This work presents a methodology that develops these solutions as a less costly alternative to high-K/metal gate technologies or thick(er) oxide transistors. The solutions focus on transistor sizing, DC biasing, and the design of current mirrors and differential amplifiers. They attempt to minimize, balance, and cancel the negative effects of direct tunneling on analog design in transistor (non-high-K/metal gate) ultra-thin oxide CMOS technologies. They require only ultra-thin oxide devices and are investigated in a 65 nm CMOS technology with a nominal V[subscript]DD of 1 V and a physical oxide thickness of 1.25 nm. A sub-1 V bandgap voltage reference that requires only ultra-thin oxide MOSFETs is presented (Tc = 251.0 ppm/°C). It utilizes the developed methodology and illustrates that it is capable of suppressing the negative effects of direct tunneling. Its performance is compared to a thick-oxide voltage reference as a means of demonstrating that ultra-thin oxide MOSFETs can be used to build the analog component of a mixed-signal system."--Abstract.

Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2008 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.

Download or read book Frequency Constraints on D C Biasing in Deep Submicron Technologies written by Jonathan Thomas Zimmermann and published by . This book was released on 2015 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The progression of technology has required smaller devices to achieve faster circuits and more power-efficient systems. However, with supply voltage and device intrinsic gain decreasing, device biasing in deep sub-micron technologies can be challenging. A low-voltage current source is analyzed in a 28 nm CMOS, 0.85 V supply, technology to take into account undesirable effects introduced by aggressively scaled technologies. The analysis includes intrinsic gain degradation as well as short-channel effects to create a more accurate design methodology. Amplifier design challenges in deep sub-micron technologies are discussed along with a DAC bias correction technique. Frequency dependence of output resistance for a simple and a proposed current source is presented. For the proposed current source the frequency dependence of output resistance was found to be dictated by the frequency response of the amplifier. To demonstrate the relevance of current source resistance bandwidth a common-mode logic circuit is considered, and fabrication plans are discussed along with future work."--Abstract.

Download or read book Circuit Techniques for Low voltage Deep Submicron CMOS Analog to digital Converters written by Christian Jésus Bayodé Fayomi and published by . This book was released on 2003 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nano scale CMOS Analog Circuits written by Soumya Pandit and published by CRC Press. This book was released on 2018-09-03 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS analog circuit design written by Allen Philip & Holberg Doug and published by . This book was released on 2010 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: