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Book Solar Energy Technical Publications Catalog

Download or read book Solar Energy Technical Publications Catalog written by and published by . This book was released on 1987 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Research on the Structural and Electronic Properties of Defects in Amorphous Silicon Final Subcontract Report September 1989 December 1990

Download or read book Research on the Structural and Electronic Properties of Defects in Amorphous Silicon Final Subcontract Report September 1989 December 1990 written by and published by . This book was released on 1991 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work performed for this contract focused on the saturation of light-induced effects, hydrogen-mediated metastability and growth, defects and electronic properties, and remote hydrogen plasma growth. This work included research on hydrogen chemical reactions, hydrogen density-of-states model and metastability, hydrogen bonding configurations, a model for the role of hydrogen complexes in the metastability, and hydrogen chemical potential and growth structure. This document also covers research on thermal generation currents in p-i-n diodes, field dependence of the generation current, metastability effects at contacts, and potential fluctuations in compensated a-Si:H. Information is included on plasma diagnostics using electron spin resonance and nuclear magnetic resonance measurements of remote hydrogen plasma films.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1983-02 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Defect States in Plasma deposited A Si

Download or read book Defect States in Plasma deposited A Si written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Studies of defects in plasma-deposited, hydrogenated amorphous silicon (a-Si:H), covering the period February 1979-January 1980 are described. Substantial progress has been made in understanding defect structures, their electronic properties and the influence of doping. The two most significant results are surprising, in one case for simplicity where complexity was expected, and in the other for complexity where simplicity had been presumed. In the first study we have clarified the nature of the defects by showing the connection between luminescence and light induced ESR experiments. The results indicate that dangling bonds having a positive electronic correlation energy are sufficient to explain most of the experimental information. The second study demonstrates the existence of microstructural inhomogeneities, arising from the nucleation and growth of the films. Thus the usual assumption of a uniform alloy with a random distribution of defects must be modified in considering processes such as electrical conduction, trapping, recombination, hydrogen effusion, etc. Of considerable technological and fundamental interest is the influence of doping on the defect behavior. Previous indications that doping introduces defect states have been confirmed. It remains to determine why this behavior occurs, and if there are any means of circumventing the problem.

Book Studies on Relative Effects of Charged and Neutral Defects in Hydrogenated Amorphous Silicon Final Report 1 October 1989 31 December 1990

Download or read book Studies on Relative Effects of Charged and Neutral Defects in Hydrogenated Amorphous Silicon Final Report 1 October 1989 31 December 1990 written by and published by . This book was released on 1992 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report covers the third year of a continuing research study to understand the relative importance of charged and neutral defects in amorphous silicon. The objective of the study is to explore the electronic structure, including neutral and charged defects, an optoelectronic effects including the formation of Staebler-Wronski defects. The study concentrated on exploring electroluminescence experimentally and interpreting the results employing a simple guiding model. The simple guiding model assumes an exponential density of states and recombination rate constants (radiative and non-radiative) which are governed by hopping transitions. Measurements were also made as a function of photodegradation of the material. The results implicate that the radiative recombination processes are not distant pair tunneling but rather results from electrons hopping down due to the coulomb interactions. Preliminary experiments have been made on the effect of photodegradation on transient space charge limited currents in n/i/n structures. These experiments can directly yield information on the occupied defects centers induced by the photodegradation and are not a result of recombination processes. To date the results seems to be consistent with a picture which places the doubly occupied defects at quite a high energy ((asymptotically equal to) 0.4 e.v. below the conduction band).

Book Government reports annual index

Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Research on the Structural and Electronic Properties of Defects in Amorphous Silicon

Download or read book Research on the Structural and Electronic Properties of Defects in Amorphous Silicon written by and published by . This book was released on 1991 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work performed for this contract focused on the saturation of light-induced effects, hydrogen-mediated metastability and growth, defects and electronic properties, and remote hydrogen plasma growth. This work included research on hydrogen chemical reactions, hydrogen density-of-states model and metastability, hydrogen bonding configurations, a model for the role of hydrogen complexes in the metastability, and hydrogen chemical potential and growth structure. This document also covers research on thermal generation currents in p-i-n diodes, field dependence of the generation current, metastability effects at contacts, and potential fluctuations in compensated a-Si:H. Information is included on plasma diagnostics using electron spin resonance and nuclear magnetic resonance measurements of remote hydrogen plasma films.

Book Studies on Relative Effects of Charged and Neutral Defects in Hydrogenated Amorphous Silicon

Download or read book Studies on Relative Effects of Charged and Neutral Defects in Hydrogenated Amorphous Silicon written by and published by . This book was released on 1992 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report covers the third year of a continuing research study to understand the relative importance of charged and neutral defects in amorphous silicon. The objective of the study is to explore the electronic structure, including neutral and charged defects, an optoelectronic effects including the formation of Staebler-Wronski defects. The study concentrated on exploring electroluminescence experimentally and interpreting the results employing a simple guiding model. The simple guiding model assumes an exponential density of states and recombination rate constants (radiative and non-radiative) which are governed by hopping transitions. Measurements were also made as a function of photodegradation of the material. The results implicate that the radiative recombination processes are not distant pair tunneling but rather results from electrons hopping down due to the coulomb interactions. Preliminary experiments have been made on the effect of photodegradation on transient space charge limited currents in n/i/n structures. These experiments can directly yield information on the occupied defects centers induced by the photodegradation and are not a result of recombination processes. To date the results seems to be consistent with a picture which places the doubly occupied defects at quite a high energy ({approx equal} 0.4 e.v. below the conduction band).

Book Structural and Electronic Studies of Defects in Amorphous Silicon Technical Progress Report September November 1980

Download or read book Structural and Electronic Studies of Defects in Amorphous Silicon Technical Progress Report September November 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Separate abstracts were prepared for the two sections included. (WHK).

Book Electronic Defects in Amorphous Silicon Materials and Devices

Download or read book Electronic Defects in Amorphous Silicon Materials and Devices written by Marc von der Linden and published by . This book was released on 1994 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: