Download or read book Structural Characterization of Epitaxial Layers for Infrared Detectors written by and published by . This book was released on 1993 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Initial structural characterization of germanium-silicon epitaxial layers for heterojunction internal photoemission and multiple quantum well infrared detectors has been performed. Cross sectional TEM of multiple quantum wells has been used to confirm period and well thickness measurements performed by other techniques. No defects were observed by TEM in these layers. A variety of other layers including multiple quantum wells on relaxed buffers and heterojunction internal photoemission detector structures have been characterized by defect etching and X-ray diffraction ... Epitaxial, Germanium, Silicon, Infrared.
Download or read book Optical Characterization of Epitaxial Semiconductor Layers written by Günther Bauer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Materials for Infrared Detectors written by and published by . This book was released on 1995 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of III V Alloys and Plasmonic Structures for Use in Infrared Detectors and Optoelectronic Devices written by Priyanka Petluru and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodetectors operating in the mid-infrared wavelength range have traditionally been dominated by the HgCdTe (MCT) material system. However, there has been growing interest in other materials due to environmental concerns regarding the toxicity of both mercury and cadmium, as well as issues with the non-uniformity of MCT epitaxial growth and minimal MCT fabrication infrastructure, compared to that of traditional arsenic- and antimony-based III-V material systems. One such example is the type-II superlattice (T2SL), which has shown great potential due to its theoretically predicted advantages such as suppressed Auger recombination, as well as for its bandgap flexibility. Yet at longer wavelengths, superlattices show weaker absorption coefficients compared to bulk materials. One option to address this deficiency is to utilize optical engineering to overcome the decreased absorption of T2SLs at these wavelengths, leveraging phenomena such as plasmonic structures. Highly doped semiconductors can act as plasmonic materials in the mid-infrared, allowing for monolithic integration of these materials into optoelectronic device structures. In this work, several all-epitaxial structures are discussed, highlighting the capabilities of integrated highly doped semiconductor materials, as well as the potential of T2SLs as an absorber material, for next generation infrared photodetectors. The first example is an all-epitaxial dielectric-metal-dielectric structure capable of supporting long-range surface plasmon polaritons in the long-wave infrared, with type-II superlattices (T2SLs) utilized as the dielectric layers in this structure. Additionally, a thin long-wave infrared p-i-n detector designed for enhanced absorption at band-edge, utilizing a guided mode resonance, is investigated. Furthermore, a detector operating at 180K in the long-wave infrared, utilizing a resonant cavity, and configured for focal plane arrays, is demonstrated. The absorption peak for this detector can be spectrally tuned across the long wave infrared wavelength range by changing the total cavity thickness, and experimental results show an external quantum efficiency of 25% on resonance at 10.8μm. Another possible alternative to the HgCdTe material system is a quaternary alloy such as InAsSbBi, which also offers large design flexibility without a weaker absorption coefficient. The potential of InAsSbBi as an absorber material for infrared detectors is also investigated, through photoluminescence and minority carrier lifetime measurements. Finally, future work and potential new directions for these projects are discussed. In particular, possible methods to improve the optical and electrical characteristics of the resonant cavity enhanced detectors are included
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Download or read book Proceedings of the Third International Symposium on Long Wavelength Infrared Detectors and Arrays Physics and Applications III written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1995 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth and Characterization of Metastable Compound Semiconductors for Infrared Detector Applications written by Wen I. Wang and published by . This book was released on 1988 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emphasis of our research under this program is to obtain device quality narrow gap materials. During this initial phase of research, all the fundamental work necessary for future achievement of high quality metastable materials has been completed. This work includes the growth of all the various buffer layer materials such as InAs, InSb, GaSb, and AlSb, the calibration of the Auger system for quick feedback of alloy composition, and the in-situ RHEED oscillation calibration of growth rate. During this buffer layer studies, we found that the growth of InAs and AlSb are compatible in the temperature range of 450-500 C. AlSb/InAs/AlSb double-barrier resonant tunneling structures have therefore been grown and measured. Peak-to-valley ratios of 1.8:1 at room temperature and 9:1 at 77K have been measured. Most importantly, the small effective mass of InAs makes it possible to demonstrate quantum effects in a 24 nm well, the longest coherent distance ever reported for double-barrier tunneling structures. We have also estimated that an AlSb/InAs resonant tunneling transistor can significantly outperform similar devices based on AlGaAs/GaAs. (rh).
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1993 with total page 1032 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of HgCdTe CdZnTe Epitaxial Materials for Infrared Detectors written by Changzhen Wang and published by . This book was released on 2007 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Materials for Infrared Detectors II written by Randolph E. Longshore and published by SPIE-International Society for Optical Engineering. This book was released on 1995 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of HgCdTe and Related Materials and Substrates for Third Generation Infrared Detectors written by Jae Jin Kim and published by . This book was released on 2012 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: HgCdTe is currently the dominant material for infrared sensing and imaging, and is usually grown on lattice-matched bulk CdZnTe (CZT) substrates. There have been significant recent efforts to identify alternative substrates to CZT as well as alternative detector materials to HgCdTe. In this dissertation research, a wide range of transmission electron microscopy (TEM) imaging and analytical techniques was used in the characterization of epitaxial HgCdTe and related materials and substrates for third generation IR detectors. ZnTe layers grown on Si substrates are considered to be promising candidates for lattice-matched, large-area, and low-cost composite substrates for deposition of II-VI and III-V compound semiconductors with lattice constants near 6.1 Å. After optimizing MBE growth conditions including substrate pretreatment prior to film growth, as well as nucleation and growth temperatures, thick ZnTe/Si films with high crystallinity, low defect density, and excellent surface morphology were achieved. Changes in the Zn/Te flux ratio used during growth were also investigated. Small-probe microanalysis confirmed that a small amount of As was present at the ZnTe/Si interface. A microstructural study of HgCdTe/CdTe/GaAs (211)B and CdTe/GaAs (211)B heterostructures grown using MBE was carried out. High quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed. In the case of HgCdTe/CdTe/ GaAs(211)B, thin HgTe buffer layers between HgCdTe and CdTe were also investigated for improving the HgCdTe crystal quality. A set of ZnTe layers epitaxially grown on GaSb(211)B substrates using MBE was studied using high resolution X-ray diffraction (HRXRD) measurements and TEM characterization in order to investigate conditions for defect-free growth. HRXRD results gave critical thickness estimates between 350 nm and 375 nm, in good agreement with theoretical predictions. Moreover, TEM results confirmed that ZnTe layers with thicknesses of 350 nm had highly coherent interfaces and very low dislocation densities, unlike samples with the thicker ZnTe layers.
Download or read book Government Reports Annual Index written by and published by . This book was released on 1993 with total page 1836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Heteroepitaxy Growth Characterization And Device Applications written by B Gil and published by World Scientific. This book was released on 1995-12-15 with total page 714 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
