Download or read book Stress Effects in Silicon Oxidation simulation and Experiments written by Conor Stefan Rafferty and published by . This book was released on 1989 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Oxidation Simulation written by Gabriel Matthew Cuka and published by . This book was released on 1990 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Lectures on Applied Mathematics written by Hans-Joachim Bungartz and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: When the DFG (Deutsche Forschungsgemeinschaft) launched its collabora tive research centre or SFB (Sonderforschungsbereich) 438 "Mathematical Modelling, Simulation, and Verification in Material-Oriented Processes and Intelligent Systems" in July 1997 at the Technische Vniversitat Munchen and at the Vniversitat Augsburg, southern Bavaria got its second nucleus of the still young discipline scientific computing. Whereas the first and older one, FORTWIHR, the Bavarian Consortium for High Performance Scientific Com puting, had put its main emphasis on the supercomputing aspect, this new initiative was now expected to focus on the mathematical part. Consequently, throughout all of the five main research topics (A) adaptive materials and thin layers, (B) adaptive materials in medicine, (C) robotics, aeronautics, and automobile technology, (D) microstructured devices and systems, and (E) transport processes in flows, mathematical aspects play a predominant role. The formation of the SFB 438 and its scientific program are inextricably linked with the name of Karl-Heinz Hoffmann. As full professor for applied mathematics in Augsburg (1981-1991) and in Munchen (since 1992) and as dean of the faculty of mathematics at the TV Munchen, he was the driv ing force of this fascinating, but not always easy-to-realize idea of bringing together scientists from mathematics, physics, engineering, informatics, and medicine for joint efforts in modern applied mathematics. However, scarcely work had begun when the successful captain was called to take command on a bigger boat.
Download or read book Two Dimensional Thermal Oxidation of Silicon 1 Experiments written by D. B. Kao and published by . This book was released on 1979 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper introduces a unique experimental approach in which extensive data were obtained concerning the oxidation of cylindrical silicon structures of controlled radii of curvature. It is quantitatively demonstrated that the oxidation of curved silicon surfaces is retarded at low temperatures and sharp curvatures, and that the retardation is more severe on concave than convex structures. These observations will be interpreted using a physical model based on stress effects on oxide growth parameters. The paper begins with a brief review of two-dimensional oxidation phenomena. Experimental procedures are then described in detail. The experimental results as characterized by surface curvature, oxide growth rate and viscosity will provide useful design guidelines. A theoretical model is developed in a separate paper based on the premise that the viscous normal to the silicon surface is responsible for the retarded oxide growth and that the stress in the bulk of the oxide accounts for the difference between concave and convex structures.
Download or read book Power Semiconductor Devices and Circuits written by A.A. Jaecklin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: This symposium was the sCientific-technical event of the centennial celebration of the Asea Brown Boveri Switzerland. The purpose was to assess the present state of the art as well as shaping the basis for future progress in the area of power devices and related power circuits. The merger of Brown Boveri (BBC) with Asea to Asea Brown Boveri (ABB) three years ago gave new stimulus and enriched the technical substance of the symposium. By 1991, 100 years after the formation of BBC in Switzerland as a single company, this organization has been decentralized, forming 35 independent ABB companies. One of them - ABB Semiconductors Ltd. - directly deals with the power semiconductor business. These significant changes reflect the changes in the market place: increased competition and higher customer expectations have to be fulfilled. In line with the core business activities of ABB and with the concept of sustainable development, it is natural for ABB to be active in the area of power devices and circuits. Increased awareness towards energy conservation is one of the main drives for these activities. User friendliness is another drive: integration of intelligent functions, e.g. protection and/or increased direct computer interfacing of the power circuits. Therefore, also the R&D activities related to the subject of thIs symposium will in the future be characterized by an even stronger coupling with the market needs. For the members of the R&D Laboratories this means improved customer partnership beyond operational excellence.
Download or read book Scientific Computing in Electrical Engineering written by Wilhelmus H. Schilders and published by Springer Science & Business Media. This book was released on 2004-08-11 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the proceedings of the 4th International Workshop "Scientific Computing in Electrical Engineering", held in Eindhoven, The Netherlands, from June 23-28, 2002. This workshop followed three earlier workshops held in 1997 at the Darmstadt University of Technology, in 1998 at the Weierstrass Institute for Applied Analysis and Stochastics, and in 2000 at the University of Rostock. The main topics of SCEE-2002 were computational electrodynamics, circuit simulation and coupled problems. The objective of the workshop, which was mainly directed at mathematicians and electrical engineers, was to bring together scientists from universities and industry with the goal of intensive discussions about modelling and numerical simulation of electronic circuits and electromagnetic fields. A special feature was the "Industry Day", where distinguished speakers discussed the needs of industry in the field of computational electromagnetics and circuit simulation. The book contains papers of invited and contributed talks, as well as from poster presentations.
Download or read book Crystalline Silicon written by Sukumar Basu and published by BoD – Books on Demand. This book was released on 2011-07-27 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 1992 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon written by J. K. Srivastava and published by . This book was released on 1985 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.
Download or read book Mechanics and Control of Solids and Structures written by Vladimir A. Polyanskiy and published by Springer Nature. This book was released on 2022-04-22 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a collection of papers prepared by the researches of the Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences (IPME RAS) on the occasion of the 30th anniversary of the establishment of the Institute. The IPME RAS is one of the leading research institutes of the Russian Academy of Sciences and consists of 18 research units (laboratories). The chapters cover the main research directions of the institute, including nano-,micro-, meso- and macro- mechanics and materials, with ,special emphasis on the problems of strength of materials and service life of structures.
Download or read book Thermal Oxide Growth on Silicon Intrinsic Stress and Silicon Cleaning Effects written by E. A. Irene and published by . This book was released on 1987 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper summarizes the experimental results and discusses the implications of recent research on two topics related to Si oxidation: mechanical stress effects; and the influence of impurities on the Si surface. For stress measurement, a double beam optical technique is used to measure the strain in the Si substrate due to the film stress. An intrinsic SiO2 stress is measured which increases with decreasing oxidation temperature. Controversy exists about whether the intrinsic stress affects transport of oxidant or the interface reaction; arguments for both views are presented. A combination of in-situ ellipsometry and contact angle measurements performed on a Si surface which is immersed in various liquid media has been successfully used to determine the role of HF in Si cleaning process. A fluorocarbon film was found to replace the removed SiO2, and the fluorocarbon renders the Si surface hydrophobic and amenable to the growth of a high quality SiO2 film for device applications. Keywords: Silicon, Silicon oxides.
Download or read book IEDM Technical Digest written by and published by . This book was released on 1987 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Generalized Models and Non classical Approaches in Complex Materials 1 written by Holm Altenbach and published by Springer. This book was released on 2018-03-24 with total page 799 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first of 2 special volumes dedicated to the memory of Gérard Maugin. Including 40 papers that reflect his vast field of scientific activity, the contributions discuss non-standard methods (generalized model) to demonstrate the wide range of subjects that were covered by this exceptional scientific leader. The topics range from micromechanical basics to engineering applications, focusing on new models and applications of well-known models to new problems. They include micro–macro aspects, computational endeavors, options for identifying constitutive equations, and old problems with incorrect or non-satisfying solutions based on the classical continua assumptions.
Download or read book Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Oxidation Studies Silicon Orientation Effects on Thermal Oxidation written by Eugene A. Irene and published by . This book was released on 1985 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: The initial stage of the thermal oxidation of various crystallographic orientations of silicon reveals a complex rate behavior. This behavior is not understood within the conventional linear - parabolic model. A recently revised model which explicitly contains the areal density of Si atoms and mechanical stress effects is shown to provide both a qualitative and somewhat quantitative explanation of the complex substrate orientation effects. The purpose of this study is to analyze the crossover effect in terms of a recently proposed viscous flow model for Si oxidation. This model utilizes the notion of mechanical stress and viscous relaxation in Si02 which occur as a result of the oxidation process on a Si substrate in addition to the other assumptions in the L-P model such as a steady state between the interface reaction and the transport of oxidant through the oxide. It is reported herein that the new viscous flow model provides a reasonable qualitative explanation for the crossover effect and in some instances a quantitative correlation of the effect.
