Download or read book Stochastic Process Variation in Deep Submicron CMOS written by Amir Zjajo and published by Springer Science & Business Media. This book was released on 2013-11-19 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
Download or read book Low Power High Resolution Analog to Digital Converters written by Amir Zjajo and published by Springer Science & Business Media. This book was released on 2010-10-29 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. This has recently generated a great demand for low-power, low-voltage A/D converters that can be realized in a mainstream deep-submicron CMOS technology. However, the discrepancies between lithography wavelengths and circuit feature sizes are increasing. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. The inherent randomness of materials used in fabrication at nanoscopic scales means that performance will be increasingly variable, not only from die-to-die but also within each individual die. Parametric variability will be compounded by degradation in nanoscale integrated circuits resulting in instability of parameters over time, eventually leading to the development of faults. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. In an attempt to address these issues, Low-Power High-Resolution Analog-to-Digital Converters specifically focus on: i) improving the power efficiency for the high-speed, and low spurious spectral A/D conversion performance by exploring the potential of low-voltage analog design and calibration techniques, respectively, and ii) development of circuit techniques and algorithms to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover errors continuously. The feasibility of the described methods has been verified by measurements from the silicon prototypes fabricated in standard 180nm, 90nm and 65nm CMOS technology.
Download or read book RF Frontend Design for Process Variation Tolerant Receivers written by Pooyan Sakian and published by Springer Science & Business Media. This book was released on 2012-02-22 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses a number of challenges faced by designers of wireless receivers, given complications caused by the shrinking of electronic and mobile devices circuitry into ever-smaller sizes and the resulting complications on the manufacturability, production yield, and the end price of the products. The authors describe the impact of process technology on the performance of the end product and equip RF designers with countermeasures to cope with such problems. The mechanisms by which these problems arise are analyzed in detail and novel solutions are provided, including design guidelines for receivers with robustness to process variations and details of circuit blocks that obtain the required performance level. Describes RF receiver frontends and their building blocks from a system- and circuit-level perspective; Provides system-level analysis of a generic RF receiver frontend with robustness to process variations; Includes details of CMOS circuit design at 60GHz and reconfigurable circuits at 60GHz; Covers millimeter-wave circuit design with robustness to process variations.
Download or read book Timing Performance of Nanometer Digital Circuits Under Process Variations written by Victor Champac and published by Springer. This book was released on 2018-04-18 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the digital design of integrated circuits under process variations, with a focus on design-time solutions. The authors describe a step-by-step methodology, going from logic gates to logic paths to the circuit level. Topics are presented in comprehensively, without overwhelming use of analytical formulations. Emphasis is placed on providing digital designers with understanding of the sources of process variations, their impact on circuit performance and tools for improving their designs to comply with product specifications. Various circuit-level “design hints” are highlighted, so that readers can use then to improve their designs. A special treatment is devoted to unique design issues and the impact of process variations on the performance of FinFET based circuits. This book enables readers to make optimal decisions at design time, toward more efficient circuits, with better yield and higher reliability.
Download or read book Analog Circuit Design for Process Variation Resilient Systems on a Chip written by Marvin Onabajo and published by Springer Science & Business Media. This book was released on 2012-03-08 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes several techniques to address variation-related design challenges for analog blocks in mixed-signal systems-on-chip. The methods presented are results from recent research works involving receiver front-end circuits, baseband filter linearization, and data conversion. These circuit-level techniques are described, with their relationships to emerging system-level calibration approaches, to tune the performances of analog circuits with digital assistance or control. Coverage also includes a strategy to utilize on-chip temperature sensors to measure the signal power and linearity characteristics of analog/RF circuits, as demonstrated by test chip measurements. Describes a variety of variation-tolerant analog circuit design examples, including from RF front-ends, high-performance ADCs and baseband filters; Includes built-in testing techniques, linked to current industrial trends; Balances digitally-assisted performance tuning with analog performance tuning and mismatch reduction approaches; Describes theoretical concepts as well as experimental results for test chips designed with variation-aware techniques.
Download or read book Closing the Gap Between ASIC Custom written by David Chinnery and published by Springer Science & Business Media. This book was released on 2002-06-30 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book carefully details design tools and techniques for high-performance ASIC design. Using these techniques, the performance of ASIC designs can be improved by two to three times. Important topics include: Improving performance through microarchitecture; Timing-driven floorplanning; Controlling and exploiting clock skew; High performance latch-based design in an ASIC methodology; Automatically identifying and synthesizing complex logic gates; Automated cell sizing to increase performance and reduce power; Controlling process variation.These techniques are illustrated by designs running two to three times the speed of typical ASICs in the same process generation.
Download or read book Leakage Power Analysis and Optimization in Deep Submicron Technologies Under Process Variation written by Saumil S. Shah and published by . This book was released on 2007 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Oriented Testing for Nano Metric CMOS VLSI Circuits written by Manoj Sachdev and published by Springer Science & Business Media. This book was released on 2007-06-04 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2nd edition of defect oriented testing has been extensively updated. New chapters on Functional, Parametric Defect Models and Inductive fault Analysis and Yield Engineering have been added to provide a link between defect sources and yield. The chapter on RAM testing has been updated with focus on parametric and SRAM stability testing. Similarly, newer material has been incorporated in digital fault modeling and analog testing chapters. The strength of Defect Oriented Testing for nano-Metric CMOS VLSIs lies in its industrial relevance.
Download or read book Sub Micron Semiconductor Devices written by Ashish Raman and published by CRC Press. This book was released on 2022-05-10 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Download or read book CMOS SRAM Circuit Design and Parametric Test in Nano Scaled Technologies written by Andrei Pavlov and published by Springer Science & Business Media. This book was released on 2008-06-01 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.
Download or read book Nanometer Variation Tolerant SRAM written by Mohamed Abu Rahma and published by Springer Science & Business Media. This book was released on 2012-09-26 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
Download or read book Nano CMOS Design for Manufacturability written by Ban P. Wong and published by John Wiley & Sons. This book was released on 2008-12-29 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover innovative tools that pave the way from circuit and physical design to fabrication processing Nano-CMOS Design for Manufacturability examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. In addition to discussing the difficulties brought on by the continued dimensional scaling in conformance with Moore's law, the authors also tackle complex issues in the design process to overcome the difficulties, including the use of a functional first silicon to support a predictable product ramp. Moreover, they introduce several emerging concepts, including stress proximity effects, contour-based extraction, and design process interactions. This book is the sequel to Nano-CMOS Circuit and Physical Design, taking design to technology nodes beyond 65nm geometries. It is divided into three parts: Part One, Newly Exacerbated Effects, introduces the newly exacerbated effects that require designers' attention, beginning with a discussion of the lithography aspects of DFM, followed by the impact of layout on transistor performance Part Two, Design Solutions, examines how to mitigate the impact of process effects, discussing the methodology needed to make sub-wavelength patterning technology work in manufacturing, as well as design solutions to deal with signal, power integrity, WELL, stress proximity effects, and process variability Part Three, The Road to DFM, describes new tools needed to support DFM efforts, including an auto-correction tool capable of fixing the layout of cells with multiple optimization goals, followed by a look ahead into the future of DFM Throughout the book, real-world examples simplify complex concepts, helping readers see how they can successfully handle projects on Nano-CMOS nodes. It provides a bridge that allows engineers to go from physical and circuit design to fabrication processing and, in short, make designs that are not only functional, but that also meet power and performance goals within the design schedule.
Download or read book Compact Models and Performance Investigations for Subthreshold Interconnects written by Rohit Dhiman and published by Springer. This book was released on 2014-11-07 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a detailed analysis of issues related to sub-threshold interconnect performance from the perspective of analytical approach and design techniques. Particular emphasis is laid on the performance analysis of coupling noise and variability issues in sub-threshold domain to develop efficient compact models. The proposed analytical approach gives physical insight of the parameters affecting the transient behavior of coupled interconnects. Remedial design techniques are also suggested to mitigate the effect of coupling noise. The effects of wire width, spacing between the wires, wire length are thoroughly investigated. In addition, the effect of parameters like driver strength on peak coupling noise has also been analyzed. Process, voltage and temperature variations are prominent factors affecting sub-threshold design and have also been investigated. The process variability analysis has been carried out using parametric analysis, process corner analysis and Monte Carlo technique. The book also provides a qualitative summary of the work reported in the literature by various researchers in the design of digital sub-threshold circuits. This book should be of interest for researchers and graduate students with deeper insights into sub-threshold interconnect models in particular. In this sense, this book will best fit as a text book and/or a reference book for students who are initiated in the area of research and advanced courses in nanotechnology, interconnect design and modeling.
Download or read book 1993 IEEE International Symposium on Circuits and Systems written by and published by . This book was released on 1993 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoelectronic Circuit Design written by Niraj K. Jha and published by Springer Science & Business Media. This book was released on 2010-12-21 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is about large-scale electronic circuits design driven by nanotechnology, where nanotechnology is broadly defined as building circuits using nanoscale devices that are either implemented with nanomaterials (e.g., nanotubes or nanowires) or following an unconventional method (e.g., FinFET or III/V compound-based devices). These nanoscale devices have significant potential to revolutionize the fabrication and integration of electronic systems and scale beyond the perceived scaling limitations of traditional CMOS. While innovations in nanotechnology originate at the individual device level, realizing the true impact of electronic systems demands that these device-level capabilities be translated into system-level benefits. This is the first book to focus on nanoscale circuits and their design issues, bridging the existing gap between nanodevice research and nanosystem design.
Download or read book Proceedings of Technical Papers written by and published by . This book was released on 1999 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
