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Book Sputtered Carbon Nitride Thin Films

Download or read book Sputtered Carbon Nitride Thin Films written by Niklas Hellgren and published by . This book was released on 1999 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth  Structure and Mechanical Properties of Magnetron Sputtered Carbon Nitride Thin Films and CNx BN C Multilayers

Download or read book Growth Structure and Mechanical Properties of Magnetron Sputtered Carbon Nitride Thin Films and CNx BN C Multilayers written by Niklas Hellgren and published by . This book was released on 1998 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Materials Science of Magnetron Sputtered Fullerene like Carbon Nitride Thin Films

Download or read book Materials Science of Magnetron Sputtered Fullerene like Carbon Nitride Thin Films written by Jörg Neidhardt and published by . This book was released on 2002 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Investigation of Reactively Sputtered Boron Carbon Nitride Thin Films

Download or read book Investigation of Reactively Sputtered Boron Carbon Nitride Thin Films written by Vinit O. Todi and published by . This book was released on 2011 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, [greek lower case letter beta]-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K[less than]3. BCN shows promise as a low dielectric constant material with good mechanical strength suitable to be used in newer CMOS technologies. For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching. BCN films have high optical transparency and thus can be used as mask substrates for X-ray lithography. Most of the efforts from different researchers were focused to deposit cubic boron nitride and boron carbide films. Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), plasma assisted CVD, pulsed laser ablation and ion beam deposition. Very limited studies could be found focusing on the effect of nitrogen incorporation into boron carbide structure by sputtering. In this work, the deposition and characterization of amorphous thin films of boron carbon nitride (BCN) is reported. The BCN thin films were deposited by radio frequency (rf) magnetron sputtering system. The BCN films were deposited by sputtering from a high purity B4C target with the incorporation of nitrogen gas in the sputtering ambient. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform BCN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 700°C. Electrical and optical characteristics are also investigated with interesting results. The optical band gap of the films ranged from 2.0 eV - 3.1 eV and increased with N2/Ar gas flow ratio except at the highest ratio. The optical band gap showed an increasing trend when annealed at higher temperatures. The effect of deposition temperature on the optical and chemical compositions of the BCN films was also studied. The band gap increased with the deposition temperature and the films deposited at 500°C had the highest band gap. Dielectric constant was calculated from the Capacitance-Voltage curves obtained for the MOS structures with BCN as the insulating material. Aluminum was used as the top electrode and the substrate was p-type Si. Effect of N2/Ar gas flow ratio and annealing on the values of dielectric constant was studied and the dielectric constant of 2.5 was obtained for the annealed BCN films. This by far is the lowest value of dielectric constant reported for BCN film deposited by sputtering. Lastly, the future research work on the BCN films that will be carried out as a part of the dissertation is proposed.

Book Synthesis of Carbon Nitride Thin Film by Magnetron Sputtering Technique

Download or read book Synthesis of Carbon Nitride Thin Film by Magnetron Sputtering Technique written by A. K. M. Shaestagir Chowdhury and published by . This book was released on 1998 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Synthesis and Properties of Carbon Nitride Thin Films

Download or read book Synthesis and Properties of Carbon Nitride Thin Films written by Dong Li and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Carbon Nitride and Carbon Fluoride Thin Films Prepared by HiPIMS

Download or read book Carbon Nitride and Carbon Fluoride Thin Films Prepared by HiPIMS written by and published by . This book was released on 2013 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present thesis focuses on carbon based thin films prepared by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS).

Book Preparation and Characterization of Carbon Nitride Thin Films

Download or read book Preparation and Characterization of Carbon Nitride Thin Films written by Lian Wan and published by . This book was released on 1995 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Structure  Mechanical and Tribological Properties of Carbon Nitride Based Superlattice and Titanium Diboride Based Composite Films Synthesized by Magnetron Sputtering

Download or read book Structure Mechanical and Tribological Properties of Carbon Nitride Based Superlattice and Titanium Diboride Based Composite Films Synthesized by Magnetron Sputtering written by Mei-Ling Wu and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis is focused on the synthesis of hard, adherent and smooth thin films using magnetron sputtering. The materials investigated in this research include carbon nitride (CNx) based superlattice and titanium diboride (TiB2) based composite thin films. Different techniques were used to characterize the films in terms of composition, structure, bonding configuration, mechanical and tribological properties.

Book Preparation and Characterisation of Carbon Nitride Thin Films

Download or read book Preparation and Characterisation of Carbon Nitride Thin Films written by Sandra Elizabeth Rodil and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Synthesis and Characterization of RF PECVD Carbon Nitride Thin Films

Download or read book Synthesis and Characterization of RF PECVD Carbon Nitride Thin Films written by Shuang Fang Lim and published by . This book was released on 1999 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Properties Simulation and Synthesis of Carbon Nitride Thin Films

Download or read book Properties Simulation and Synthesis of Carbon Nitride Thin Films written by Zifeng He and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

Download or read book Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering written by Tuomas Hänninen and published by Linköping University Electronic Press. This book was released on 2018-02-13 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C2H2) in addition to N2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated. The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N2/Ar flow ratios of 0.3 and above. These films showed Si-N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si–Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature below 200 °C, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V. The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si–Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, namely the refractive index and extinction coefficient, were shown to depend on the film chemical bonding, with the stoichiometric films displaying optical properties falling between those of silicon oxide and silicon nitride. The properties of silicon carbonitride films were greatly influenced by the synthesis method. The films deposited by HiPIMS using acetylene as the carbon source showed silicon nitride-like mechanical properties, such as a hardness of ~ 20 GPa and compressive residual stresses of 1.7 – 1.9 GPa, up to film carbon contents of 30 at.%. At larger film carbon contents the films had increasingly amorphous carbon-like properties, such as densities below 2 g/cm3 and hardnesses below 10 GPa. The films with more than 30 at.% carbon also showed columnar morphologies in cross-sectional scanning electron microscopy, whereas films with lower carbon content showed dense morphologies. Due to the use of acetylene the carbonitride films contained hydrogen, up to ~ 15 at.%. The co-sputtered silicon carbonitride films showed a layered SiNx/CNx structure. The hardness of these films increased with the film carbon content, reaching a maximum of 18 GPa at a film carbon content of 12 at.%. Comparatively hard and low stressed films were grown by co-sputtering using a C target power of 1200 W for a C content around 12 at.%, a negative substrate bias less than 100 V, and a substrate temperature up to 340 °C.

Book Advances in Electronics  Communication and Computing

Download or read book Advances in Electronics Communication and Computing written by Akhtar Kalam and published by Springer. This book was released on 2017-10-27 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a compilation of research work in the interdisciplinary areas of electronics, communication, and computing. This book is specifically targeted at students, research scholars and academicians. The book covers the different approaches and techniques for specific applications, such as particle-swarm optimization, Otsu’s function and harmony search optimization algorithm, triple gate silicon on insulator (SOI)MOSFET, micro-Raman and Fourier Transform Infrared Spectroscopy (FTIR) analysis, high-k dielectric gate oxide, spectrum sensing in cognitive radio, microstrip antenna, Ground-penetrating radar (GPR) with conducting surfaces, and digital image forgery detection. The contents of the book will be useful to academic and professional researchers alike.

Book Carbon Nitride Thin Films

Download or read book Carbon Nitride Thin Films written by Anna Zocco (fisico.) and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: