Download or read book SPICE Parameter Extraction for MOSFET Modeling in Analog Circuit Design written by Wen Lu and published by . This book was released on 1998 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analog Model Parameter Extraction circuits for Process Monitoring written by Manisha Arora and published by . This book was released on 2019 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: A method for extracting the three parameters of the well-known level-2 Spice MOSFET-model namely threshold voltage, transconductance parameter, and channel length modulation is presented. Currently circuit design is based on CAD tools using complex model parameters obtained by laborious and expensive methods. While this is essential to design reliable systems on a chip, simpler analog techniques can be used for process monitoring. This work presents simple on-chip analog circuits that can characterize MOSFET just by measuring voltages and currents thus reducing the time and complexity of measurement. For this, on-chip implementation of two parameter extraction circuits are presented. The first circuit is for determining the threshold voltage Vth, and transconductance parameter (k). The second is to determine the channel-length modulation parameter (l). These circuits generate voltages or currents proportional to model parameters Vth, k and l. Simulation results and measured values from these circuits fabricated using TSMC 180nm process are presented. Results are also compared with accurate model parameters currently available in CAD tools to estimate the level of precision attainable using this method
Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Download or read book MOSFET Modeling with SPICE written by Daniel Foty and published by Prentice Hall. This book was released on 1997 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will help CMOS circuit designers make the best possible use of SPICE models, and will prepare them for new models that may soon be introduced. Introduces SPICE modeling and its use in CMOS circuit design. Presents the formalism of model building and the semiconductor physics of MOS structures. Covers each important SPICE model, showing how to choose the appropriate model. Discusses the popular HSPICE Level 28, as well as Levels 1-3, BSIM 1-3, and MOS Model 9. Presents techniques for accounting for systematic process variations. Describes new model candidates, including the Power-Lane Model, the PCIM Model, and the EKV Model. Includes extensive examples throughout. Practicing engineers and scientists in the semiconductor industry; engineering faculty and students.
Download or read book MOSFET Modeling BSIM3 User s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Download or read book CMOS Analog Design Using All Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Download or read book Modeling And Parameter Extraction Techniques Of Silicon based Radio Frequency Devices written by Ao Zhang and published by World Scientific. This book was released on 2023-03-21 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
Download or read book MOSFET Parameter Extraction and Spice Modeling written by Sai Subhash Sripada and published by . This book was released on 2015 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper proposes a simple extraction technique which can be used to extract device parameters of any power MOSFET easily. It only requires the use of transfer and output characteristic graphs to extract threshold voltage and transconductance and a few formulas to extract the parasitic capacitances of the power device. The extraction technique is presented in an easy to understand step by step procedure. The parameters extracted using this process are used to develop a spice model. Transient analysis is done for the extracted model and the resistive switching performance is compared with the datasheet in order to prove the effectiveness of the extraction technique used. Inductive switching is also done for the extracted model and the effect of varying the parameters of the MOSFET on inductive switching times is observed. Finally, this observation is then used to develop a new mathematical SiC power MOSFET model which has better inductive switching times than the extracted model and the thesis is concluded.
Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Download or read book BSIM Bulk MOSFET Model for IC Design Digital Analog RF and High Voltage written by Chenming Hu and published by Elsevier. This book was released on 2023-04-26 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. Those working in the semiconductor industry often run into a variety of problems like model non-convergence or non-physical simulation results. This is largely due to a limited understanding of the internal operations of the model as literature and technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. Reviews the latest advances in fabrication methods for metal chalcogenide-based biosensors Discusses the parameters of biosensor devices to aid in materials selection Provides readers with a look at the chemical and physical properties of reactive metals, noble metals, transition metals chalcogenides and their connection to biosensor device performance
Download or read book MOSFET Modeling Simulation and Parameter Extraction in 4H 6H Silicon Carbide written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as a vertical MOSFET in SiC are also presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. Considering the SiC material processing limitations and feedback from the system level application group, an application specific SiC power MOSFET structure has been proposed. The device dimensions were chosen to obtain the desired specific on-resistance and breakdown voltage of the power MOSFET. A good agreement between the analytical model and the MEDICI simulation is demonstrated. The temperature models include effects of temperature on the threshold voltage, carrier mobility, the body leakage current, and the drain and source contact region resistances for a lateral MOSFET and the effects of temperature on the threshold voltage, carrier mobility, the body leakage current, drift region resistance and channel resistance for a vertical MOSFET. The temperature dependent compensating current elements are introduced in the model. These compensating currents contribute to the total current at high temperatures. A rigorous testing and characterization has been carried out on a 4H-SiC DIMOS transistor test device. SPICE parameters have been extracted from the measurements and a SPICE model for the DIMOS transistor has been developed. The models developed in this research will not only help the SiC device researchers in the device behavioral study but will also provide a SPICE model for circuit designers.
Download or read book MOSFET Models for SPICE Simulation written by William Liu and published by Wiley-IEEE Press. This book was released on 2001-02-21 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site
Download or read book A Study of Spice Parameter Extraction for MOSFET Modeling with Emphasis on Small Geometry Effects in MOSFETS written by Christopher Anthony Freymuth and published by . This book was released on 1985 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The SPICE Book written by Andrei Vladimirescu and published by John Wiley & Sons. This book was released on 1994 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new book, written by Andre Vladimirescu, who was instrumental in the development of SPICE at the University of California Berkeley, introduces computer simulation of electrical and electronics circuits based on the SPICE standard. Relying on the functionality first supported in SPICE2 that is now supported in all SPICE programs, this text is addressed to all users of electrical simulation. The approach to learning circuit simulation is to interpret simulation results in relation to electrical engineering fundamentals; the book asks the student to solve most circuit examples by hand before verifying the results with SPICE. Addressed to both the SPICE novice and the experienced user, the first six chapters provide the relevant information on SPICE functionality for the analysis of linear as well as nonlinear circuits. Each of these chapters starts out with a linear example accessible to any new user of SPICE and proceeds with nonlinear transistor circuits. The latter part of the book goes into more detail on such issues as functional and hierarchical models, distortion analysis, basic algorithms in SPICE and related options parameters, and, how to direct SPICE to find a solution when it does not converge to a solution. The approach emphasizes that SPICE is not a substitute for knowledge of circuit operation but a complement. The SPICE Book is different from previously published books in the approach of solving circuit problems with a computer. The solution to most circuit examples is sketched out by hand first and followed by a SPICE verification. For more complex circuits it is not feasible to find the solution by hand but the approach stresses the need for the SPICE user tounderstand the results. Readers gain a better comprehension of SPICE thanks to the importance placed on the relation between EE fundamentals and computer simulation. The tutorial approach advances from the hand solution of a circuit to SPICE verification and simulation results interpretation. This book teaches the approach to electrical circuit simulation rather than a specific simulation program. Examples are simulated alternatively with SPICE2, SPICE3 or PSPICE. Accurate descriptions, simulation rationale and cogent explanations make this an invaluable reference.
Download or read book A study of spice parameter extraction for MOSFET modeling with emphasis on small geometry effects in MOSFETS written by Christopher A. Freymuth and published by . This book was released on 1987 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analog Circuit Design written by Willy M.C. Sansen and published by Springer Science & Business Media. This book was released on 1999-10-31 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume of Analog Circuit Design concentrates on three topics: (X)DSL and other communication systems; RF MOST models; and integrated filters and oscillators. The book comprises five chapters on the first topic with six each on the other two, all written by internationally recognized experts. They are tutorial in nature and together make a substantial contribution to improving the design of analog circuits. The book is divided into three parts: Part I: (X)DSL and other Communication Systems presents some examples of recent improved modem techniques which have resulted in much higher transmission speeds over the local telephone network. It also presents components for the implementation of different standards. Part II: RF MOST Models investigates the state of the art in RF MOST models. It compares the existing BSIM3v3, Philips' Model 9 and the EKV model with respect to their capability to accurately predict GHz performance with submicron CMOST technologies. It shows how it has now become quite feasible to model a MOST at very high frequencies, giving rise to an increased use of MOST technologies in RF applications. Part III: Integrated Filters and Oscillators illustrates how the increasing use of communication tools goes hand-in-hand with the design of analog filters and oscillators with greater flexibility and higher bandwidth.
Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
