Download or read book Some Experimental Studies of N Type Gan and Au Gan Contacts written by Ke Wang and published by . This book was released on 2017-01-28 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Some Experimental Studies of N type GaN and Au GaN Contacts written by Ke Wang (M.Phil.) and published by . This book was released on 2002 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theoretical and Experimental Approach to Developing Improved Electrical Contacts to GaN written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The metallurgy and electrical performance of contacts to GaN were examined. Thermodynamic estimates coupled with experimental work revealed clear trends in the nature of the contact metallurgy depending upon the position of the metal in the periodic table. This information was then used to aid in the investigation and design of electrical contacts to GaN. Ohmic contacts to n-GaN, Schottky barriers to n-GaN, and ohmic contacts to p-GaN were fabricated and characterized. These studies resulted in an improved understanding of the mechanism of ohmic contact formation in Al/Ti/n-GaN contacts, along with the development of TiN/Ti/n-GaN and ZrN/Zr/n-GaN ohmic contacts with exceptional thermal stability at 600 deg C and contact resistivities of 6 x 10(exp -6) and 2 x 10(exp -5) ohm.sq cm, respectively, for n = 7 x 10(exp 17) cu cm. Also developed were Re/n-GaN Schottky barrier contacts that were stable upon annealing at 700 deg C with current-voltage and capacitance-voltage barrier heights of 0.82 and 1.06 eV, respectively. For ohmic contacts to p-GaN, a large number of contacts were evaluated. A clear improvement over conventional Au/Ni/p-GaN contacts was provided by electrodeposited Pt/p-GaN and sputtered Pt/Ni/p-GaN contacts, which provided contact resistivities that were lower than Au/Ni/p-GaN contacts by more than a factor of two. An explanation for this improvement was formulated.
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 1997-10-29 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Download or read book Ohmic Contacts to GaN written by Douglas B. Ingerly and published by . This book was released on 2000 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Metal Contacts to Gallium face and Nitrogen face N type GaN Material written by Di Zhu and published by . This book was released on 2008 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Ni Cr Au Contact on P type GaN written by Qi Zou and published by . This book was released on 1999 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition and Electrical Chemical and Microstructural Characterization of the Interface Formed Between Pt Au and Ag Rectifying Contacts and Cleaned N type GaN 0001 Surfaces written by Kieran Mark Tracy and published by . This book was released on 2000 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: Gallium Nitride, Photoemission, Rectifying Contacts, GaN, Surface Preparation.
Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Download or read book An Analysis of Metal Contacts to GaN written by William Patrick Lewis and published by . This book was released on 2007 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ohmic and Schottky contacts to GaN on sapphire and free standing GaN are investigated. A detailed analysis of the circular Transmission Line Mea-surement (c-TLM) technique is carried out. We show the need to accurately measure the contact radii to extract accurate contact resistivity values, _c using c-TLM, for contacts to p-type GaN. Small measurement errors, _ 0.5 _m, lead to large errors in _c, especially as _c decreases. An alternative technique to extract _c, based on the series resistance of a p-n diode, is investigated. This method relies on uniform current density over the whole metal{semiconductor diode contact and the existence of a singular diode ideality. Defects in p-type GaN on LED material are shown to electroplate preferentially. Ni plated defects annealed in an O2 atmosphere are shown to be passivated, with signi_cant measured improvements in the I{V and L{I char- acteristics of LEDs. Electroless deposition is explored as an alternative contact formation technique. This novel approach yields Ni/Au, p-type ohmic contacts, with a _c comparable with evaporated contacts. A _c of 2.2 x 10_2 cm_2 at room temperature and a _c of 2.5 x 10_2 cm_2 at 410 K indicate the tunneling nature of the contact. The method provides for a reduction in the cost and processing time associated with ohmic contact formation. CoW contacts to n-type GaN are shown to be rectifying even after a 6500C anneal. KOH etching of Ga-face, freestanding, n-type, GaN, is shown to aid ohmic contact formation and remove the need for a high temperature anneal. Schottky contacts were optimised on low doped epi-layers, on free standing n-GaN substrates. The contacts are governed by thermionic emission, with low ideality, 1.04 and low on-state resistance, 0.57 mcm2. The idealities of the devices are shown to decrease with increasing temperature, while the barrier heights remain relatively constant. KOH treatments of the material were shown to increase the Schottky barrier height and reduce reverse leakage currents.
Download or read book Deposition and Electrical Chemical and Microstructural Characterization of the Interface Formed between Pt Au and Ag Rectifying Contacts and Cleaned n type GaN 0001 Surfaces written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The characteristics of clean n-type GaN surfaces and the interface between this surface and Pt, Au and Ag, have been investigated. Gallium-terminated (0001) surfaces of GaN, free of carbon and oxygen within the detection limits of XPS have been achieved by annealing in ammonia at 860 & deg;C for 15 minutes. Additional, in-situ surface analysis indicated a flat, stoichometric, and unreconstructed surface free of other contaminants. The electron affinity of this surface was 3.1 " 0.2 eV. The valence band maximum was located 3.0 " 0.1 eV below the Fermi level, indicating the presence of a surface state near the valence band maximum. Individual layers of Pt, Au or Ag were deposited in-situ on the cleaned surface and the interfaces characterized using XPS, UPS, LEED and TEM. All as-deposited metal/GaN interfaces were abrupt and unreacted; the Pt and Au were deposited epitaxially. The Schottky barrier heights obtained from photoemission measurements were 1.2, 0.9 and 0.5 " 0.2 eV for Pt, Au and Ag, respectively. Values of the metal work function from UPS results were 5.7, 5.3 and 4.4 " 0.2 eV for Pt, Au and Ag, respectively. Schottky barrier heights determined via ex-situ current-voltage measurements were 1.15, 0.88 and 0.56 " 0.05 eV for Pt, Au and Ag, respectively. Capacitance-voltage measurements yielded barrier heights of 1.25 and 0.96 " 0.05 eV, for Pt and Au, respectively. These results indicate that the Fermi level of the cleaned surface is not pinned. Upon annealing the aforementioned contacts from 400 to 800 & deg;C for 3 minutes each. The rectifying behavior of the Pt and Au contacts degraded as a function of temperature during annealing at 400, 600 and 800 & deg;C for 3 minutes each until they became ohmic. This was correlated with TEM of the annealed interfaces, which displayed increased chemical reaction and roughening as a function of temperature.
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book Graphene Science Handbook Six Volume Set written by Mahmood Aliofkhazraei and published by CRC Press. This book was released on 2016-04-26 with total page 3379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene is the strongest material ever studied and can be an efficient substitute for silicon. This six-volume handbook focuses on fabrication methods, nanostructure and atomic arrangement, electrical and optical properties, mechanical and chemical properties, size-dependent properties, and applications and industrialization. There is no other major reference work of this scope on the topic of graphene, which is one of the most researched materials of the twenty-first century. The set includes contributions from top researchers in the field and a foreword written by two Nobel laureates in physics. Volumes in the set: K20503 Graphene Science Handbook: Mechanical and Chemical Properties (ISBN: 9781466591233) K20505 Graphene Science Handbook: Fabrication Methods (ISBN: 9781466591271) K20507 Graphene Science Handbook: Electrical and Optical Properties (ISBN: 9781466591318) K20508 Graphene Science Handbook: Applications and Industrialization (ISBN: 9781466591332) K20509 Graphene Science Handbook: Size-Dependent Properties (ISBN: 9781466591356) K20510 Graphene Science Handbook: Nanostructure and Atomic Arrangement (ISBN: 9781466591370)
Download or read book Advanced Research on Industry Information System and Material Engineering IISME2012 written by Helen Zhang and published by Trans Tech Publications Ltd. This book was released on 2012-01-24 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt: In these proceedings are to be found original ideas and new insights on many aspects of Industry, information Systems and Materials Engineering. The conference was an excellent platform for researchers to exchange innovative ideas and new perspectives. The 140 papers are grouped into the following: 1: Industrial Technology, Materials Engineering and Dynamic Systems, 2: Industry, Manufacturing Technology and Mechanical Engineering, 3: Materials Science, Machine Systems and Production Systems and 4: Materials Engineering, Energy Science and Ecological Resources. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Download or read book Proceedings of the Third Symposium on III V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book State of the Art Program on Compound Semiconductors 46 SOTAPOCS 46 and Processes at the Semiconductor Solution Interface 2 written by C. O'Dwyer and published by The Electrochemical Society. This book was released on 2007 with total page 647 pages. Available in PDF, EPUB and Kindle. Book excerpt: Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.
Download or read book III V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
