Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 4 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

Download or read book The Si SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.

Download or read book Catalyzed Deposition of Silicon Dioxide SiO2 at Room Temperature written by Neven J. Steinmetz and published by . This book was released on 2002 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiO2 and Its Interfaces Volume 105 written by S. T. Pantelides and published by Mrs Proceedings. This book was released on 1988-07-21 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book The Physics of SiO2 and Its Interfaces written by Sokrates T. Pantelides and published by Elsevier. This book was released on 2013-09-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

Download or read book LECONS SUR L INFORMATIQUE written by and published by . This book was released on 2006 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon on insulator Technology and Devices written by Peter L. F. Hemment and published by The Electrochemical Society. This book was released on 1999 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Comprehensive Treatise on Inorganic and Theoretical Chemistry written by Joseph William Mellor and published by . This book was released on 1925 with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solar Silicon Processes written by Bruno Ceccaroli and published by CRC Press. This book was released on 2016-10-03 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline silicon (commonly called "polysilicon") is the material of choice for photovoltaic (PV) applications. Polysilicon is the purest synthetic material on the market, though its processing through gas purification and decomposition (commonly called "Siemens" process) carries high environmental risk. While many current optoelectronic applications require high purity, PV applications do not and therefore alternate processes and materials are being explored for PV grade silicon. Solar Silicon Processes: Technologies, Challenges, and Opportunities reviews current and potential future processing technologies for PV applications of solar silicon. It describes alternative processes and issues of material purity, cost, and environmental impact. It covers limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. The book also defines purity requirements and purification processes of metallurgical grade silicon (MG-Si) and examines production of solar grade silicon by novel processes directly from MG-Si and/or by decomposition of silane gas in a fluidized bed reactor (FBR). Furthermore, the book: Analyzes past research and industrial development of low-cost silicon processes in view of understanding future trends in this field. Discusses challenges and probability of success of various solar silicon processes. Covers processes that are more environmentally sensitive. Describes limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. Defines purity requirements and purification processes of MG-Si. Examines production of solar grade silicon directly from MG-Si.

Download or read book Electrical Properties of Solids written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since 1963 the Research Materials Information Center has been answering inquiries on the availability, preparation, and properties of ultrapure inorganic research specimens. It has been possible to do this with reasonable efficiency by searching an automated coded microfilm collection of the report and open literature and of data sheets and question naires provided by commercial and research producers of pure materials. With the growth of the collection to over 70,000 documents and the increase in the demand for more general background information, it has been necessary to compile bibliographies on an increasing variety of subjects. These have been used as indexes to the microfilmed documents for more efficient searching, and in the past distributed in response to individual requests. However, their size and number no longer permit so casual and uneconomic a method of distribution. The "ORNL Solid State Physics Literature Guides" is a practical alternative. Organization The subject organization of the bibliography is given by the Table of Contents. Each section is preceded by a collection of reviews, bibliographies, and "general" papers (i.e., those dealing with methods or equipment rather than single materials, or with such a wide variety of materials that no subsection was appropriate). Coverage is generally from 1960 to mid-1970. Emphasis is on inorganic materials.

Download or read book Development characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells written by Renaud Varache and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: L'interface entre le silicium amorphe (a-Si:H) et le silicium cristallin (c-Si) est un constituent clés de cellules solaires à haut rendement reposant sur des procédés à basse température. Trois propriétés de l'interface déterminent le rendement des cellules solaires à hétérojonction de silicium: les décalages de bandes entre a-Si:H et c-Si, les défauts d'interface et la courbure de bande dans c-Si. Ces trois aspects sont traités dans ces travaux de thèse.Dans un premier un temps, un calcul analytique de la courbure de bande dans c-Si est développé. Il repose sur l'approximation d'une densité d'état (DE) constante dans la bande interdite de a-Si:H. L'influence des principaux paramètres de la structure sur la courbure de bande est étudiée : décalage de bande, densité d'état dans a-Si:H, défaut d'interface, etc. La présence d'un effet de confinement quantique est discutée. Grâce à une comparaison entre ces calculs et des mesures de conductance planaire en fonction de la température sur des structures (p)a-Si:H/(n)c-Si et (n)a-Si:H/(p)c-Si, les décalages de bande de valence et de conduction ont pu être estimés à 0.36 eV et 0.15 eV respectivement. En outre, il est montré que le décalage de la bande de valence est indépendant de la température, alors que le décalage de la bande de conduction suit les évolutions des bandes interdites de c-Si et a-Si:H. Ces mesures tendent à prouver que le 'branch point' dans a-Si:H est indépendant du dopage.Ensuite, les calculs analytiques sont approfondis pour prendre en compte différents aspects de la structure complète incorporée dans les cellules : contact avec un oxyde transparent conducteur, présence d'une couche de a-Si:H non-dopée à l'interface. A l'aide de simulations numériques et à la lumière de mesures de conductance planaire conjuguées à des mesures de la qualité de passivation de l'interface, des pistes pour optimiser les cellules à hétérojonction sont commentées. En particulier, il est montré qu'un optimum doit être trouvé entre une bonne passivation et une courbure de bande suffisante. Ceci peut être accompli par un réglage fin des propriétés de la couche tampon (épaisseur, dopage), du contact (travail de sortie élevé) et de l'émetteur (p)a-Si:H (densité de défauts et épaisseur). En particulier, un émetteur avec une DE importante conduit paradoxalement à de meilleures performances.Enfin, un nouveau type d'interface a été développé. La surface de c-Si a été oxydée volontairement dans de l'eau pure dé-ionisée à 80 °C avant le dépôt de (p)a-Si:H afin d'obtenir une structure (p)a-Si:H/SiO2/(n)c-Si. A l'aide d'un modèle de courant par effet tunnel implémenté dans le logiciel de simulation numérique AFORS-HET, l'effet d'une couche à grande bande interdite (comme c'est le cas pour SiO2) sur les performances de cellules est étudié : le facteur de forme et le courant de court-circuit sont extrêmement réduits. En revanche, une couche de SiO2 n'a que peu d'impact sur les propriétés optiques de la structure. Expérimentalement, les échantillons réalisés montrent une qualité de passivation à mi-chemin entre le cas sans couche tampon et le cas avec (i)a-Si:H : ceci est expliqué par la présence d'une charge fixe négative dans l'oxyde. La courbure de bande dans c-Si est moins affectée par la présence d'une couche d'oxyde que d'une couche de (i)a-Si:H. Les cellules solaires réalisées démontrent que le concept a le potentiel d'aboutir à de hauts rendements : sur des structures non-optimisées, une tension de court-circuit supérieure à 650 mV a été démontrée, alors que l'oxyde ne semble pas limiter le transport de charge.

Download or read book Fundamental and Applied Nano Electromagnetics II written by Antonio Maffucci and published by Springer. This book was released on 2019-06-14 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing prevalence of nanotechnologies has led to the birth of “nanoelectromagnetics,” a novel applied science related to the interaction of electromagnetic radiation with quantum mechanical low-dimensional systems. This book provides an overview of the latest advances in nanoelectromagnetics, and presents contributions from an interdisciplinary community of scientists and technologists involved in this research topic. The aspects covered here range from the synthesis of nanostructures and nanocomposites to their characterization, and from the design of devices and systems to their fabrication. The book also focuses on the novel frontier of terahertz technology, which has been expanded by the impressive strides made in nanotechnology, and presents a comprehensive overview of the: - synthesis of various nanostructured materials; - study of their electrical and optical properties; - use of nano-sized elements and nanostructures as building blocks for devices; - design and fabrication of nanotechnology devices operating in the THz, IR and optical range. The book introduces the reader to materials like nanocomposites, graphene nanoplatelets, carbon nanotubes, metal nanotubes, and silicon nanostructures; to devices like photonic crystals, microcavities, antennas, and interconnects; and to applications like sensing and imaging, with a special emphasis on the THz frequency range.

Download or read book Optical Properties of Low Dimensional Silicon Structures written by B. Bensahel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

Download or read book The Physics and Technology of Amorphous SiO2 written by Roderick A.B. Devine and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.