Download or read book Silicon rich Silicon Nitride SRN for Integrated Photonics and Thermo optic Applications written by Hani Nejadriahi and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is important to note that current LIDAR systems rely on rotating the device to scan the field of view in one dimension. Although mechanical rotations allow for a full 360 degrees scan, it requires bulky apparatus that are not so robust to vibrations and harsh environments. Thus, the need for compact, low cost and small-scale solid-state LIDAR is evermore increasing. Silicon photonics seems to be a viable solution for the future of on-chip communication. The advancements in silicon photonics, and CMOS compatible foundries, allow for the fabrication of the next generation of miniaturized optical components and photonic integrated circuits i.e., phased arrays. Silicon photonics has been at the forefront of optical communications and the next generation of optical transceivers. As a result, there has been also some development in the optical phased arrays. Phased arrays are antenna-based devices whereby controlling the phase and amplitude of each individual antenna and due to the interference between them, one can generate an arbitrary emitted pattern. Radio frequency based phased arrays have long been in use for decades and are a big part of data communication. They are considered the "de facto" way to do solid-state electronic beam steering for many RADAR systems. However, devices used for the optical phased arrays offer high pointing accuracy and resolution in a smaller size compared to the radio frequencies due to the much shorter wavelength of light. Despite its immense potentials optical phased arrays have yet to become a commercial product. Part of the reason for that has been the lack of an ideal platform. Existing optical phased arrays are mostly based on silicon and stoichiometric silicon nitride. Although they can be each be useful for specific applications however, they have some drawbacks. First, stoichiometric silicon nitride due to its lower index and thermo-optic coefficient at the telecom wavelengths, it lacks an efficient phase tuning mechanism. Additionally, the waveguiding structure needs to be larger to have a more confined optical mode which makes the footprint and scaling in the system an issue. On another note, silicon based optical phased arrays are not ideal for high-power operation. Due to the losses in the system and the presence of grating lobes, the system requires a greater amount of input power to achieve a given output power. However, this also increases the chance of damage at the input (nonlinear optical losses), where the power is the highest. This is due to the high two/multi-photon absorption coefficient present in silicon. As such, we are proposing a new platform with our high index plasma-enhanced chemical vapor deposited (PECVD) silicon-rich silicon nitride where the positive attributes of both silicon and stoichiometric silicon nitride are combined. The objective of this thesis is to provide a systematic approach towards the development of a novel CMOS compatible platform (high index silicon-rich silicon nitride) which can be an ideal alternative to the existing platform used for OPAs utilizing the thermo-optic effect. We provide a systematic approach towards the development and the enhancement of PECVD deposited silicon nitride's thermo-optic coefficient as a function the deposition parameters and the silicon content. The ratio of the Si/N is adjusted by changing the ratio of the precursor gases used during the deposition (SiH4/N2). We achieve a wide range of linear refractive indices (1.92-3.1 measured at [lambda] = 1550 nm). We show that highly silicon-rich silicon nitride films with index n>3 possess a much larger transparency window extending to the telecom wavelengths while maintaining low loss optical waveguiding in the C-band. We further show that thermo-optic coefficient of our highest index nitride film with n = 3.1 is (1.65 x 10-4 K-1) which is very close to that of crystalline silicon. We then utilized this high index film with a high thermo-optic coefficient to design, fabricate, and characterize photonic integrated circuits that could potentially be used for a phased array system. The cascaded and compact splitters: y-branch and multi-mode interference coupler for splitting the laser beam onto the chip, multimode interferometric switch for amplitude control, thermo-optic phase shifter for phase tuning the antennas, compact bends in single and multi-mode waveguides implemented in the switch and the phase shifter, and the beta mismatched closely spaced waveguides for creating a phase difference between them to avoid coupling in the near-field (even when their evanescent fields overlap). Finally, we were able to fully integrate and experimentally demonstrate an SRN based end-fire facet optical phased array with 16 elements at [lambda]/2 spacing (775 nm) that has a spot size of about 6 degrees at boresight (0 degrees). The wide steering range is close to a full 120 degrees with one dimensional field of view. The high beam quality in our system is due to a) our compact and efficient phase shifter design which allow for localized heating with negligible crosstalk, b) along with the phase mismatched for the closely spaced waveguides antennas. Such system can be scaled and used for the next generation of LiDAR applications.

Download or read book Silicon Nitride written by Emiliano Jose Hierra and published by Nova Science Publishers. This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nitride (Si3N4) ceramic is used in numerous applications because of its superior properties, such as high-temperature strength, good oxidation resistance and low thermal expansion coefficient. In this book, the authors present current research in the study of the synthesis, properties and applications of silicon nitride. Topics include the optical and vibration properties of silicon rich nitride; high temperature oxidation of silicon nitride based ceramics; low temperature preparation of phosphate bonded silicon nitride ceramics with high mechanical strength; the SPS-sintering process and use of ceramics for high-temperature engineering applications; synthesis and properties of silicon nitride coatings; and the use of silicon nitride as biomaterial.

Download or read book Silicon Nitride for Microelectronic Applications written by J. T. Milek and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . •. . . . . . . . .

Download or read book LPCVD Silicon Nitride and Oxynitride Films written by F.H.P.M. Habraken and published by Springer. This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book collects a broad overview of chemical and physical char acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.

Download or read book Silicon Nitride for Microelectronic Applications written by John T. Milek and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation • 5 Introduction • 5 Direct Nitridation Method 8 Evaporation Method • 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.

Download or read book Silicon Nanocrystals and Defect States in Silicon Rich Silicon Nitride for Optoelectronic Applications written by Shakil Mohammed and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Research interest in silicon nanocrystals (Si-NC) has increased significantly as a result of the desire to improve the light emission efficiency of bulk silicon. Si-NCs embedded in silicon nitride have desirable characteristics for optoelectronic applications since they can increase the tunneling probability and have a lower tunneling barrier than silicon oxide. Higher tunneling probability is an important feature as it can be used to develop more efficient electroluminescent and photovoltaic devices. In this dissertation, the Si-rich Si3N4 (SRN) was prepared using low pressure chemical vapor deposition (LPCVD) and RF sputtering followed by high temperature treatment in order to precipitate Si-NCs within the silicon nitride matrix. Several different characterization techniques were used on the Si-NC samples in order to understand the physical, structural, optical and electrical behavior of the nanocrystals. Characterization techniques used in this analysis included photoluminescence (PL), time resolved PL, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy, ellipsometry and capacitance-voltage (C-V) measurements. Silicon nitride was found to contain a high defect density which suppressed the PL effect from the Si-NC. The PL observed from each different SRN sample correlated to defect states, namely dangling bonds and oxygen related bonding. Although substantial evidence suggested that Si-NC had formed within the SRN sample, a PL effect due to the quantum confinement effect (QCE) from the nanocrystals could not be detected. However, Si rich SiOx samples exhibited excellent PL which correlated with the QCE for an indirect bandgap semiconductor. Further experiments were conducted using forming gas in order to passivate the defects in the SRN. Though significant changes in PL was not achieved due to passivation, the electrical behavior from the SRN indicated that the intrinsically charged defects may have been passivated.

Download or read book Ultra Low Loss Silicon Nitride Platform Fabrication and Application written by Xingchen Ji and published by . This book was released on 2018 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photonics is the physical science of light (photon) generation, detection and manipulation. Silicon photonics, in particular, has gained a lot of interest in the last few decades due to its ability to control light at chip-scale. Although the field has its roots in the telecommunications industry, it has expanded to many new applications such as sensing, spectroscopy, nonlinear optics, quantum optics, opto-mechanics, and even neuroscience. Nonlinear optics has been greatly benefited from the chip-scale devices. Because light can be tightly confined inside these devices, nonlinear effects can be strongly enhanced. In recent years, there has been progress in development of microresonator-based Kerr frequency comb, these frequency combs have triggered a large number of applications, including in atomic clocks, optical communications, dual-comb spectroscopy, frequency synthesizers and sensing. However, simultaneously achieving ultra low-loss and high confinement which is critical for nonlinear optics remains a challenge. In this dissertation, we set out to address this challenge in order to enable new applications. We choose silicon nitride as our material platform here. We begin by introducing the background of loss mechanisms, nonlinear optics and application requirements before detailing our approach to realizing a compact and scalable alternative to the existing state-of-the-art. The first part of this dissertation investigates the current microfabrication processes and loss origins. Detailed explanations of critical process steps including deposition, lithography and etching are discussed. We further discussed about loss measurements and methods to reduce loss. We developed processes which allows us to achieve ultra low-loss in high-confinement resonators by reducing roughness from waveguide interfaces. Moreover, we demonstrate optical parametric oscillation in an on-chip microresonator with sub-milliwatt pump powers. We extract the fundamental loss limit in our devices. Our work provides an on-chip platform for devices with performance that could be comparable to the performance achieved in discrete large devices and these processes can be also applied to other material platforms. In the second part of this dissertation, we look into two applications of using our ultra low-loss silicon nitride platform: Optical coherence tomography (OCT) and on-chip tunable photonic delay lines. First, we present a comb with a smooth envelope and high conversion efficiency enabled by our platform. We demonstrate frequency combs for biomedical application (OCT) for the first time. To demonstrate the efficacy of our system, tissue depth scans are compared on an identical OCT system for both the novel integrated frequency comb source and a traditional superluminescent diode. Second, we demonstrate on-chip tunable photonic delay lines within a small footprint enabled by the same platform. A novel adiabatic taper design is proposed to overcome the stitching loss which limiting the achievable waveguide length. We replace the reference arm in an OCT system to illustrate the capability of the photonic delay line. We further show that the tunable photonic delay lines can extend the imaging range of the OCT for a variety of applications such as blade detection, wo...

Download or read book LPCVD Silicon Nitride and Oxynitride Films written by F. H. P. M. Habraken and published by Lecture Notes in Computer Scie. This book was released on 1991 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book collects a broad overview of chemical and physical char- acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex- tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato- ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro- electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide- like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men- tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.

Download or read book High Quality Integrated Silicon Nitride Nanophotonic Structures for Visible Light Applications written by Ehsan Shah Hosseini and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High quality nanophotonic structures fabricated on silicon nitride substrates and operating in the visible range of the spectrum are investigated. As most biological sensing applications, such as Raman and fluorescence sensing, require visible light pumping and analysis, extending the nanophotonics concepts to the visible range is essential. Traditionally, CMOS compatible processes are used to make compact silicon nanophotonics structures. While the high index contrast of silicon on insulator (SOI) wafers offer a high integration capability, the high absorption loss of silicon renders it unusable in the visible range. In this research high quality factor microdisk and photonic crystal resonators and high resolution arrayed waveguide grating and superprism spectrometers are fabricated and characterized in the visible range and integrated with fluidic structures and their application in biosensing and athermal operations is investigated.

Download or read book Silicon Nitride for Microelectronic Applications written by John T. Milek and published by . This book was released on 1971 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Noise and Signal Interference in Optical Fiber Transmission Systems written by Stefano Bottacchi and published by John Wiley & Sons. This book was released on 2008-11-20 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive reference to noise and signal interference in optical fiber communications Noise and Signal Interference in Optical Fiber Transmission Systems is a compendium on specific topics within optical fiber transmission and the optimization process of the system design. It offers comprehensive treatment of noise and intersymbol interference (ISI) components affecting optical fiber communications systems, containing coverage on noise from the light source, the fiber and the receiver. The ISI is modeled with a statistical approach, leading to new useful computational methods. The author discusses the subject with the help of numerous applications and simulations of noise and signal interference theory. Key features: Complete all-in-one reference on the subject for engineers and designers of optical fiber transmission systems Discusses the physical principles behind several noise contributions encountered in the optical communications systems design, including contributions from the light source, the fiber and the receiver Covers the theory of the ISI for the binary signal, as well as noise statistics Discusses the theory and the mathematical models of the numerous noise components (such as optical noise, photodetection noise and reflection noise) Introduces the frequency description of the ISI and provides new calculation methods based on the characteristic functions Provides useful tools and examples for optimum design of optical fiber transmission networks and systems This book will serve as a comprehensive reference for researchers, R & D engineers, developers and designers working on optical transmission systems and optical communications. Advanced students in optical communications and related fields will also find this book useful.

Download or read book Frontiers in Chemical Engineering written by National Research Council and published by National Academies Press. This book was released on 1988-02-01 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the next 10 to 15 years, chemical engineers have the potential to affect every aspect of American life and promote the scientific and industrial leadership of the United States. Frontiers in Chemical Engineering explores the opportunities available and gives a blueprint for turning a multitude of promising visions into realities. It also examines the likely changes in how chemical engineers will be educated and take their place in the profession, and presents new research opportunities.

Download or read book Luminescence written by Jagannathan Thirumalai and published by BoD – Books on Demand. This book was released on 2016-11-10 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this book is to give readers a broad review of topical worldwide advancements in theoretical and experimental facts, instrumentation and practical applications erudite by luminescent materials and their prospects in dealing with different types of luminescence like photoluminescence, electroluminescence, thermo-luminescence, triboluminescence, bioluminescence design and applications. The additional part of this book deals with the dynamics, rare-earth ions, photon down-/up-converting materials, luminescence dating, lifetime, bioluminescence microscopical perspectives and prospects towards the basic research or for more advanced applications. This book is divided into four main sections: luminescent materials and their associated phenomena; photo-physical properties and their emerging applications; thermoluminescence dating: from theory to applications, and bioluminescence perspectives and prospects. Individual chapters should serve the broad spectrum of common readers of diverse expertise, layman, students and researchers, who may in this book find easily elucidated fundamentals as well as progressive principles of specific subjects associated with these phenomena. This book was created by 14 contributions from experts in different fields of luminescence and technology from over 20 research institutes worldwide.

Download or read book Recent Advances in Sustainable Technologies written by Kanishka Jha and published by Springer Nature. This book was released on 2021-05-17 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Advances in Sustainable Technologies (ICAST 2020), organized by Lovely Professional University, Punjab, India. The topics covered in this book are multidisciplinary in nature. The primary topics included in the book are from the domains of automobile engineering, mechatronics, material science and engineering, aerospace engineering, bio-mechanics, biomedical instrumentation, mathematical techniques, agricultural engineering, nuclear engineering, physics, biodynamic modelling and ergonomics etc. The contents of this book will be beneficial for beginners, researchers, and professionals alike.

Download or read book Metal Matrix Composites written by T. S. Srivatsan and published by Springer Nature. This book was released on 2021-02-16 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection brings together engineers, scientists, scholars, and entrepreneurs to present their novel and innovative contributions in the domain specific to metal-matrix composites and on aspects specific to modeling, analysis, measurements, and observations specific to microstructural advances. Topics include but are not limited to: · Metals and metal-matrix composites · Nano-metal based composites · Intermetallic-based composites Contributions in the above topics connect to applications in industry-relevant areas: automotive, energy applications, aerospace, failure analysis, biomedical and healthcare, and heavy equipment and machinery.

Download or read book Nanocrystals and Nanostructures written by Claudia Maria Simonescu and published by BoD – Books on Demand. This book was released on 2018-10-17 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanocrystals and nanostructures attract a special attention in the recent years due to their various properties and a wide range of applications such as in electrical, optical, optoelectronic, catalytic, medicine, chemo- and biosensing, and environmental protection fields. Although extensive research has been done in the field of nanocrystals, it is considered one growing research field. The main goal of this book is to present the current research activities in the field of nanocrystals and nanostructures covering issues regarding new synthesis methods, self-assembly strategies, characterization techniques, properties, and applications. Interesting reports regarding biomimetic modeling of the biomineralization processes and theoretical models to describe mechanisms of deformation twinning in nanocrystalline and ultrafine-grained materials have been presented. By structuring, approaching, and content, the work may be useful for specialist in the field of nano-/materials science, PhD students, students, and all those interested in this topic of high relevance.

Download or read book Quantum Dot Lasers written by Victor Mikhailovich Ustinov and published by . This book was released on 2003 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.