Download or read book Silicon Oxidation Simulation written by Gabriel Matthew Cuka and published by . This book was released on 1990 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

Download or read book Simulation and Modeling of Kinetics of Silicon Oxidation in the Thin Oxide Regime written by Tirthankar Dutta and published by . This book was released on 1991 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Stress Effects in Silicon Oxidation simulation and Experiments written by Conor Stefan Rafferty and published by . This book was released on 1989 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simulation of Atomistic Processes During Silicon Oxidation written by Angelo Bongiorno and published by . This book was released on 2003 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Two dimensional Oxidation written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1983 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Finite element Methods for Process Simulation Application to Silicon Oxidation written by Pantas Sutardja and published by . This book was released on 1988 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Oxide Studies written by Charles Pang-Hsin Ho and published by . This book was released on 1978 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Finite elemnt Methods for Process Simulation Application to Silicon Oxidation written by Pantas Sutardja and published by . This book was released on 1989 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Modeling and Simulation of Silicon Photonic Crystals written by G. M. Haider Ali and published by . This book was released on 2005 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling of Thermal Oxidation and Diffusion in Silicon Using MATLAB written by Urvi Desai and published by . This book was released on 2008 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxidation of Tungsten written by Vincent David Barth and published by . This book was released on 1961 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents a detailed review of available information on the oxidation of W and its alloys. W is relatively inert below 700 C. As the temperature is increased above this level, however, oxidation becomes progressively more rapid, reaching catastrophic rates at temperatures around 1200 C and above. Various theories for the mechanism and rates of W oxidation at different temperatures are reviewed, and the effect of pressure and water vapor on the stability of W oxides is discussed in detail. The elevatedtemperature reactions of W with other materials, such as refractory oxides, and with gases other than oxygen also are covered. Information on the protection of W by alloying and coating is included. (Author).

Download or read book Analysis and Process Modeling of Dry Thermal Oxidation of Silicon with Application to Integrated Circuits written by Rochit Rajsuman and published by . This book was released on 1985 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.