Download or read book Silicon Front end Junction Formation Technologies written by Daniel F. Downey and published by . This book was released on 2002 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.
Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
Download or read book Ulsi Front end Technology Covering From The First Semiconductor Paper To Cmos Finfet Technology written by Wai Shing Lau and published by World Scientific. This book was released on 2017-08-23 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book.
Download or read book Simulation of Semiconductor Processes and Devices 2007 written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Download or read book Silicon Front End Junction Formation Physics and Technology Volume 810 written by Peter Pichler and published by Cambridge University Press. This book was released on 2004-07-27 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book researchers come together to highlight trends in research on the formation of ultrashallow junctions and their integration into devices. It is generally agreed that conventional RTP processes will not be able to reach the 45nm node of the ITRS. As alternatives, concepts based on solid-phase epitaxy or millisecond-flash annealing, and the use of impurities like fluorine or carbon, are discussed. An important issue for future devices is silicides and germanides. With a trend towards lower process temperatures, interest is directed towards nickel silicides. Of similar importance is the use of silicon-germanium layers in which dopant redistribution is affected by strain effects. Since process development and optimization are hardly conceivable without technology computer-aided design, the potentials and limitations of process simulation are addressed. Additional presentations focus on applications from atomistic modeling to the prediction of ultrashallow junction formation. Applications of state-of -the-art characterization methods are also demonstrated.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Front end Junction and Contact Formation in Future Silicon germanium Based Devices written by and published by . This book was released on 2008 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Predictive Simulation of Semiconductor Processing written by Jarek Dabrowski and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.
Download or read book Si Front End Processing Physics and Technology II of Dopant Defect Interactions II Volume 610 written by Aditya Agarwal and published by . This book was released on 2001-04-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by William Andrew. This book was released on 2015-09-02 with total page 827 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures Geared towards practical applications rather than theory
Download or read book Silicon Materials Science and Technology written by and published by . This book was released on 1998 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2000 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
Download or read book Si Front End Processing Volume 669 written by Erin C. Jones and published by . This book was released on 2001-12-14 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Download or read book Laser Annealing Processes in Semiconductor Technology written by Fuccio Cristiano and published by Woodhead Publishing. This book was released on 2021-04-21 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Download or read book Ion Implantation Technology written by Edmund G. Seebauer and published by American Institute of Physics. This book was released on 2008-12-11 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).
