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Book Silicon Carbide Vertical junction Field effect Transistors

Download or read book Silicon Carbide Vertical junction Field effect Transistors written by Kiyoshi Tone and published by . This book was released on 2002 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical Characterizations of Silicon Carbide SiC Static Induction Transistors SITs and Vertical Channel Junction Field Effect Transistors VJFETs

Download or read book Electrical Characterizations of Silicon Carbide SiC Static Induction Transistors SITs and Vertical Channel Junction Field Effect Transistors VJFETs written by Sharmila Devi Magan Lal and published by . This book was released on 2004 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Compact Modeling of Silicon Carbide SiC Vertical Junction Field Effect Transistor VJFET in PSpice Using Angelov Model and PSpice Simulation of Analog Circuit Building Blocks Using SiC VJFET Model

Download or read book Compact Modeling of Silicon Carbide SiC Vertical Junction Field Effect Transistor VJFET in PSpice Using Angelov Model and PSpice Simulation of Analog Circuit Building Blocks Using SiC VJFET Model written by Siddharth Purohit and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power circuit simulation. An empirical Angelov model is developed for SiC VJFET in PSpice. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting. The coefficients are extracted for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers in the future. The developed model was applied for investigating the characteristics of a few standard analog circuit blocks using SiC VJFET and Si JFET in order to demonstrate the capabilities of the model to reveal the relative advantages of one over the other. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier. Simulations of analog circuit building blocks incorporating SiC VJFET showed better circuit functionality compared to their Si counterparts.

Book COMPACT MODELING OF SILICON CARBIDE SIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR VJFET IN PSPICE USING ANGELOV MODEL AND PSPICE SIMULATION OF ANALOG CIRCUIT BUILDING BLOCKS USING SIC VJFET MODEL

Download or read book COMPACT MODELING OF SILICON CARBIDE SIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR VJFET IN PSPICE USING ANGELOV MODEL AND PSPICE SIMULATION OF ANALOG CIRCUIT BUILDING BLOCKS USING SIC VJFET MODEL written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power circuit simulation. An empirical Angelov model is developed for SiC VJFET in PSpice. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting. The coefficients are extracted for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers in the future. The developed model was applied for investigating the characteristics of a few standard analog circuit blocks using SiC VJFET and Si JFET in order to demonstrate the capabilities of the model to reveal the relative advantages of one over the other. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier. Simulations of analog circuit building blocks incorporating SiC VJFET showed better circuit functionality compared to their Si counterparts.

Book 4h Sic Schottky Barrier Diodes and Junction Field Effect Transistors

Download or read book 4h Sic Schottky Barrier Diodes and Junction Field Effect Transistors written by Denis Perrone and published by LAP Lambert Academic Publishing. This book was released on 2010-07 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.

Book SiC Materials and Devices

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices. Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

Book Fundamentals of Silicon Carbide Technology

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Book Characterization of Silicon Carbide Junction Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors

Download or read book Characterization of Silicon Carbide Junction Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors written by Alvin Ong and published by . This book was released on 2007 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: Generating the device models requires measured device characteristics like drain-source on-resistance and switching times. The objective of this research was to develop an automated bench top test system to characterize the SiC MOSFET and JFET for device modeling. A high power curve tracer and specially designed test board along with a data acquisition program developed in LabVIEW(TM) provide for a quick and accurate measurement of the device parameters, thus providing with vital information against which their models are validated.

Book Vertical GaN and SiC Power Devices

Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House. This book was released on 2018-04-30 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Book Effect of Total Ionizing Dose and Heavy Ion Radiation in a Silicon Carbide Vertical Junction Field Effect Transistor

Download or read book Effect of Total Ionizing Dose and Heavy Ion Radiation in a Silicon Carbide Vertical Junction Field Effect Transistor written by Robert Steele Shaw and published by . This book was released on 2013 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon carbide (SiC) power semiconductor devices become a more attractive alternative to silicon based technology (due to their lower on-resistance, higher voltage blocking, and higher operating temperature), SiC-based electronics will need to be qualified for high reliability applications, i.e., space exploration vehicles requiring a minimal level of radiation hardening. Unfortunately, very little data exists for SiC power devices due to their lack of commercial availability. It was only very recently that SiC power devices have been introduced into the commercial market. This work presents the radiation testing of a 1200 V SiC vertical junction field-effect transistor (VJFET) under total ionizing dose (TID) and heavy ion radiation hardness of a 1200 V SiC VJET. The TID testing revealed that the SiC VJFET is radiation hardened in excess of 300 krad, and the heavy ion testing revealed that the device is radiation hardened to 60 MeV-cm2/mg under a drain to source voltage and gate to source bias of 300 V and 0 V, respectively. While there is much more work to be done before integration into high reliability applications, a space exploration vehicle utilizing SiC power devices would see benefits in terms of gravimetric and volumetric reductions on a system-wide level, e.g., a more efficient power management unit, reduced thermal management system, and/or reduced energy storage system.

Book Physics and Technology of Silicon Carbide Devices

Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Book Sic Materials And Devices Volume 2

Download or read book Sic Materials And Devices Volume 2 written by Michael S Shur and published by World Scientific. This book was released on 2007-01-19 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

Book A Design Methodology for a Point of Load Converter for a Distributed Power Architecture Using a Normally Off Silicon Carbide Vertical Junction Field Effect Transistor as the Enabling Technology

Download or read book A Design Methodology for a Point of Load Converter for a Distributed Power Architecture Using a Normally Off Silicon Carbide Vertical Junction Field Effect Transistor as the Enabling Technology written by and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A point-of-load converter was designed for a distributed power architecture using a normally off silicon carbide (SiC) junction field effect transistor (JFET) as the enabling technology. The power supply accepts a 208-V single phase input and generates a +26 V and +10 V output for pulsed loads as well as a +5 V and -5 V auxiliary supplies for digital/control circuitry. This work focuses on the integration of the first normally off SiC JFET to allow for an efficient ([greater than or equal to] 93%), high power density ([greater than or equal to] 100 W/in3) power converter demonstrating higher switching frequency. A switching frequency of 500 kHz was achieved which more than doubles the operating frequency of a reference design with silicon MOSFETs. The power supply design described in this thesis integrates a power factor correction pre-regulator with multiple output Weinberg and flyback converters each utilizing normally off SiC JFETs. Experimental results are presented to validate the design.

Book Study of Silicon Carbide Buried Gate Junction Field Effect Transistor and Related Devices for High Temperature Applications

Download or read book Study of Silicon Carbide Buried Gate Junction Field Effect Transistor and Related Devices for High Temperature Applications written by Lisa V. Rozario and published by . This book was released on 1997 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: