Download or read book Silicium sur isolant amorphe par microfusion de zone laser written by Jean-Michel Hodé (auteur d'une thèse de sciences.) and published by . This book was released on 1984 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicium sur isolant amorphe par microfusion de zone laser written by Jean-Michel Hodé and published by . This book was released on 1984 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicium sur isolant amorphe par microfusion de zone laser written by Jean-Michel Hodé and published by . This book was released on 1984 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: DEFINITION DU MONTAGE EXPERIMENTAL, PRESENTATION DES TECHNIQUES DE CARACTERISATION PHYSIQUE EMPLOYEES, DESCRIPTION DE L'UTILISATION DE COUCHES ENCAPSULANTES ET ANTIREFLET. PROPOSITION D'UN MODELE DES MECANISMES DE CROISSANCE MIS EN JEU ET EXPLICATION DE LA FORMATION DES PRINCIPAUX DEFAUTS COMME LES SOUS-JOINTS DE GRAINS. MODELISATION THERMIQUE DE L'INTERACTION ENTRE LASER ET STRUCTURE SILICIUM SUR ISOLANT TENANT COMPTE DES PHENOMENES PHYSIQUES CARACTERISTIQUES DU PROBLEME: REFLECTIVITE VARIABLE, CHALEUR LATENTE, ASPECT DYNAMIQUE

Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

Download or read book Low power HF Microelectronics written by Gerson A. S. Machado and published by IET. This book was released on 1996 with total page 1072 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together innovative modelling, simulation and design techniques in CMOS, SOI, GaAs and BJT to achieve successful high-yield manufacture for low-power, high-speed and reliable-by-design analogue and mixed-mode integrated systems.