Download or read book Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor written by and published by . This book was released on 1992 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition (RPCVD) system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures (10 (exp -7) Torr to 1.67 mTorr), temperatures (250 C-400 C) and times (20 sec to 3 min.) without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silyl(SiH3) species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.

Download or read book A Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy written by and published by . This book was released on 1992 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: A simple controller system has been designed and added to an existing deposition system in order to implement deposition of silicon by Atomic Layer Epitaxy (ALE). A Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) system has been modified for automatic control of repetitive cycles of disilane dosing and hydrogen desorption via low energy ion bombardment. The simple configuration of the input/output modules and ease of programming allowed efficient debugging of the installation and a large degree of flexibility in in situ cleaning and in both ALE and CVD experiments.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1993 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Epitaxy of Group IV Materials Surface Processes Thin Films Devices and Their Characterization written by and published by . This book was released on 1993 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer epitaxy of monocrystalline Beta-SiC on Si(100) and alpha (6H)-SiC(0001) substrates has been accomplished at 850 deg C by alternating the supplies of Si2H6, C2H4 and atomic hydrogen and without the use of a carbonizing step. Conformal deposition of SiC has been demonstrated within trenches etched into Si(100) wafers. P-type films have also been achieved using A1 as a dopant. Devices including HBTs with Beta-SiC emitters have been designed. Hydrogen plasma cleaning of SiC surfaces has been studied. XPS has shown that this process effectively removes C-0, C-F and C-H bonding at the surface. Temperature programmed desorption has been used to look at the amount of subsurface hydrogen generated during plasma cleaning. The diamond precursors of chlorinated methylsilanes and the substrate of Si(100) were subjected to bias enhanced high- frequency CVD. No difference in diamond nucleation density between the precursors was observed. An interface structure of single crystal CeO2/Si(111) grown by laser ablation has been investigated. An interfacial reaction occurred between these phases during deposition which resulted in the formation of an oxygen deficient amorphous(a) CeOx layer and an SiO2 layer. Post annealing in 02 caused the disappearance of the a-CeOx and the regrowth of crystalline CeO2. Atomic Layer Epitaxy (ALE), Diamond, Silicon carbide, CeO2, Conformal position, XPS, Temperature programmed desorption, Chlorinated methylsilanes, Interfacial reaction.

Download or read book Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment written by and published by . This book was released on 1992 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at low temperatures and subsequently chemisorbing Si2H6 on the surface in a self-limiting fashion. Si substrates were prepared using an RCA clean followed by a dilute HF dip to provide a clean, dihydride-terminated (1 x 1) surface, and were loaded into a Remote Plasma Chemical Vapor Deposition (RPCVD) system in which the substrate is downstream from an r-f noble gas(He or Ar) glow discharge in order to minimize plasma damage. An in situ remote H plasma clean at 250 deg C for 45 min. was used to remove surface 0 and C and provide an alternating monohydride and dihydride termination, as evidenced by a (3 x 1) RHEED pattern. It was found necessary to desorb the H from the Si surface to create adsorption sites for Si bearing species such as Si2H6. Remote He plasma bombardment for 1-3 min. was investigated over a range of temperatures (250 deg C-410 deg C), pressures (50-400 mTorr) and r-f powers (6-30 W) in order to desorb the H and convert the (3 x 1) RHEED pattern to a (2 x 1) pattern which is characteristic of either a monohydride termination or a bare Si surface.

Download or read book Silicon atomic layer epitaxy based in disilane and remote helium plasma bombardment written by Avinash Prabhakar Mahajan and published by . This book was released on 1992 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Annual Index written by and published by . This book was released on 1993 with total page 1834 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Hydrogen Assisted Chemical Vapor Deposition and Etching of Silicon Thin Films written by Shuangying Yu and published by . This book was released on 1996 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Silicon Epitaxy by Remote Plasma enhanced Chemical Vapor Deposition written by Scott Dwight Habermehl and published by . This book was released on 1994 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Epitaxy written by T. Suntola and published by Springer. This book was released on 1989-10-31 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently £3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1993 with total page 1356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Download or read book Effects of hydrogen termination on the low temperature growth mode Si on Si 100 by remote plasma enhanced chemical vapor deposition written by Bruce Bennett Doris and published by . This book was released on 1997 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1989 with total page 1606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Download or read book Conference Papers Index written by and published by . This book was released on 1988 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monthly. Papers presented at recent meeting held all over the world by scientific, technical, engineering and medical groups. Sources are meeting programs and abstract publications, as well as questionnaires. Arranged under 17 subject sections, 7 of direct interest to the life scientist. Full programs of meetings listed under sections. Entry gives citation number, paper title, name, mailing address, and any ordering number assigned. Quarterly and annual indexes to subjects, authors, and programs (not available in monthly issues).