Download or read book Shallow Impurity Centers in Semiconductors written by A. Baldereschi and published by Elsevier. This book was released on 2012-12-02 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.
Download or read book Shallow Impurity Centers in Semiconductors written by and published by . This book was released on 1987 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shallow Impurity Centers in Semiconductors written by Raffaele Resta and published by . This book was released on 1987 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shallow Impurity Centers in Semiconductors written by A. Baldereschi and published by North Holland. This book was released on 1987 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shallow Impurity Centers in Semiconductors written by and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Conference on Shallow Impurity Centers written by and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shallow level Centers In Semiconductors Proceedings Of The 7th International Conference written by C A J Ammerlaan and published by World Scientific. This book was released on 1997-04-19 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Download or read book Shallow Impurity Centers in Semiconductors written by A. Baldereschi and published by . This book was released on 1987 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Impurities in Semiconductors written by Arthur George Milnes and published by Wiley-Interscience. This book was released on 1973 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Doping in III V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Download or read book Shallow Impurities in Semiconductors V written by Tsunemasa Taguchi and published by Trans Tech Publications Ltd. This book was released on 1993-01-01 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.
Download or read book Shallow Impurities in Semiconductors written by Tsunemasa Taguchi and published by . This book was released on 1993 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2010-04-07 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Download or read book Shallow Impurities in Semiconductors written by Gordon Davies and published by . This book was released on 1991 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .
Download or read book Deep Centers in Semiconductors written by Sokrates T. Pantelides and published by CRC Press. This book was released on 1992-11-30 with total page 952 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Download or read book Proceedings of the 10th International Conference on Shallow Level Centers in Semiconductors written by Marek Godlewski and published by Wiley-VCH. This book was released on 2003-05-27 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 10th SLCS conference covered a broad range of the topics concerned with the fundamental properties of shallow levels in semiconductors and with impurity related issues of importance to semiconductor technology. such as: - Single and multiple donors and acceptors - Shallow excited states of deep-level impurities - Impurity related properties of mesoscopic and/or low-dimensional systems - Impurity-bound excitions - Defects interaction on the atomic scale - New methods in shallow-level states theory - New experimental techniques - Aspects relevant to applications.
Download or read book Impurity Complexes in Pure Elemental Semiconductors written by Robert Edward McMurray and published by . This book was released on 1984 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
