Download or read book Self and Zinc Diffusion in Gallium Antimonide written by Samuel Piers Nicols and published by . This book was released on 2002 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Self and Zinc Diffusion in Gallium Antimonide written by and published by . This book was released on 2002 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

Download or read book Zinc diffusion in tellurium doped gallium antimonide written by Gavin John Conibeer and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Self diffusion in Indium Antimonide and Gallium Antimonide written by Fred Henry Eisen and published by . This book was released on 1956 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analytical Study of Zinc Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.

Download or read book Channeling Studies of the Location of Zinc in Gallium arsenide written by Kurt Karl Christenson and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered. We believe that the anomalous nature can be explained by combining the theories of R. L. Longini (1962) on the effect of the hole density on the interstitial population and of K. Weiser (1962) on the effect of the charge state of an interstitial on the diffusion activation energy. To test our hypothesis, we have located the position of the zinc in the GaAs lattice with the ALCHEMI technique (Atom Location by CHanneling Enhanced MIcroanalysis) in a Transmission Electron Microscope (TEM). This required substantial enhancements to the x-ray microanalytic abilities of the TEM along with an improved understand of the nature of the illumination in the immersion lens of a TEM, all of which are discussed. Our results indicate that, within the experimental error, all of the zinc occupies the gallium sites which is consistent with our hypothesis. Further research involving TEM, synchrotron, diffusion and device studies are also suggested.

Download or read book Bibliography on Diffusion of Impurity Elements in Compound Semiconductors written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1961 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study of the literature pertaining to solid state diffusion in compound semiconductors has been made as a preliminary step to a research project in this area. The resulting bibliography is given in the hope that it may be useful to other workers interested in this subject. While no claim is made that the listings are exhaustive, it is believed that the more important publications are included. This is a relatively new field of research with many interesting problems in need of solution. (Author).

Download or read book Zinc Diffusion in Gallium Arsenide with a Moving Dislocation Band written by He Bong Kim and published by . This book was released on 1965 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Download or read book Zinc Diffusion in Intrinsic and Heavily Doped Gallium Arsenide written by Andrew Chi-mo Wang and published by . This book was released on 1970 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Leaky Tube Zinc Diffusion in Gallium Arsenide written by Alan Wakefield Righter and published by . This book was released on 1984 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion Solubility and Distribution Coefficient of Zinc in Gallium Arsenide and Gallium Phosphide written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1963 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiotracer Zn65 was vapor diffused in GaAs and GaP single crystals in closed, evacuated quartz ampoules. The solubilities and diffusion profiles were obtained over the temperature range 700 to 1100 C. The solubility data were analyzed by assuming Zn-GaAs and Zn-GaP to be binary systems and considering the transfer of neutral Zn from the liquid to the solid where some Zn atoms become ionized acceptors. The solubilities and distribution coefficients of Zn in these two semiconductor were calculated as functions of temperature up to the melting point of the solvents. The experimentally measured diffusion profile exhibit a steep front for Zn in GaAs above 700 C and for Zn in GaP above 900 C. Application of the Boltzmann-Matano method to these profiles shows that the diffusion coefficient is strongly concentration-dependent. A precise evaluation of this dependence was obtained from isoconcentration diffusions performed at a fixed temperature: 900 C for Zn in GaAs and 1000 C for Zn in GaP. (Author).

Download or read book Diffusion Solubility and Distribution Coefficient of Zinc in Gallium Arsenide and Galium Phosphide written by Leroy Li-gong Chang and published by . This book was released on 1963 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion and Defect Data written by and published by . This book was released on 1967 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Tin and Zinc Diffusion Into Gallium Arsenide from Doped Silicon Dioxide Layers written by Waldemar von Münch and published by . This book was released on 1966 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion Data written by and published by . This book was released on 1967 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microelectronic Materials and Processes written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.