Download or read book Selective Oxidation of Al bearing III V Semiconductors written by Michael John Ries and published by . This book was released on 1996 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors with Application to Quantum Well Heterostructure Lasers written by Steven Andrew Maranowski and published by . This book was released on 1995 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors written by Eugene I-Chun Chen and published by . This book was released on 1996 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$sb{rm x}$Ga$sb{rm 1-x}$As (x $sbsp{sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($sbsp{sim}{>}400 spcirc$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches. Native oxide-based AlGaAs-GaAs metal-oxide-semiconductor field-effect transistor devices are fabricated via lateral oxidation of a thin AlAs layer. Data are presented demonstrating depletion-mode transistor operation. This shows that the native oxide is of sufficient quality to allow modulation of an underlying GaAs channel. Impurity-induced layer disordering (IILD) and water vapor oxidation are also used to define a planar minidisk cavity in a superlattice (70 A AlAs + 30 A GaAs) crystal. Data are presented showing photopumped "whispering gallery mode" laser operation of $sim$37 $mu$m minidisks lasers. Finally, the IILD and oxidation process is extended to the formation of a microdisk photonic lattice. Data are presented showing that the microdisks ($sim$9 $mu$m diameter) are sufficiently coupled to form "bands" in the photopumped recombination radiation spectra.

Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors Properties and Applications to Small volume Quantum Well Heterostructure Lasers written by Michael John Ries and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and chemically stable. In addition, it is electrically insulating and has a low refractive index making it useful for defining optical cavities and current paths. The oxidation rate is sensitive to the Al composition of the material, permitting selective oxidation of "buried" high-Al-composition layers. The selective oxidation of "buried" layers is used in this work to fabricate laser cavities that are small in volume. Small-volume cavities, called microcavities, are known to exert control over the recombination of carriers within the cavity, and may be exploited to create devices with improved laser characteristics. In this work, the embedded oxide is used to form the distributed Bragg reflecting (DBR) mirrors of a vertical-cavity surface-emitting laser (VCSEL), resulting in a very high index-contrast mirror and, consequently, a very compact VCSEL cavity that exhibits microcavity effects very strongly. Another form of microcavity, the microdisk laser, is fabricated using the oxide process. The microdisk laser (10 $mu$m in diameter) rests on the low-index, thermally conductive native oxide and exhibits laser modes characteristic of "whispering gallery" modes propagating around the perimeter of the disk. Low threshold pump intensities indicate that these microdisk lasers are high-Q cavities. By combining impurity-induced layer disordering (IILD) with the oxidation process, a planar minidisk laser is fabricated. The minidisk laser is larger in diameter (37 $mu$m) and is entirely planar. The minidisk laser operates in "whispering gallery" modes around the perimeter of the disk, indicating the feasibility of the combination of processes in fabricating disk lasers. The same IILD + oxidation process is used to fabricate a two-dimensional active photonic lattice that is comprised of $sim$9-$mu$m microdisk lasers that are arranged in a triangular (hexagonal close-packed) lattice arrangement. The disks are closely spaced (11-$mu$m center-to-center spacing) such that they are strongly coupled. As a result of the coupling of the disks, the photonic lattice exhibits laser operation in bands of energy located around the microdisk modes. In addition, the photonic lattice emits beams of energy along six symmetrical "crystal" directions. The details of photonic lattice fabrication and characterization are described.

Download or read book Selective Oxidation of Aluminum Bearing III V Semiconductors with Applications to Quantum Well Heterostructure Lasers written by Steven Andrew Maranowski and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the present work, a water vapor oxidation process is used to convert high Al-composition $rm Alsb{x}Gasb{1-x}As and Insb{0.5}(Alsb{x}Gasb{1-x})sb{0.5}P$ to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily. Selective oxidation of quantum well heterostructure crystals is used to convert only the highest aluminum composition materials to the native oxide. In the layered heterostructures commonly used in today's optoelectronic devices, selective oxidation is a unique way to "bury" an insulating and low-refractive-index oxide both above and below semiconductor layers used in a device. This makes possible, as described here, an edge-emitting laser diode that is confined both optically and electrically by "buried" oxide layers above and below the active region. Selective oxidation of $rm Alsb{x}Gasb{1-x}As$ occurs at low enough temperatures $(400spcirc$C-500$spcirc$C) to be performed on a fully metallized laser diode without adversely affecting its electrical performance. Metallized laser diodes are oxidized from their exposed facets, resulting in edge-emitting devices with current-blocking window regions at the mirrors. The buried oxide "spike," which extends from the facet into the crystal, forms selectively in a region of high aluminum composition. The buried oxide removes the current injection from the facet region, protects the facet, and results in improved maximum output powers from the lasers. Finally, the ability to form low-index $rm(nsim1.55)$ layers of oxide between high-index semiconductor crystals facilitates the formation of high-index-contrast distributed Bragg reflecting (DBR) mirrors. The properties of these mirrors and their applications to vertical cavity surface emitting lasers and edge-emitting lasers are described.

Download or read book Native Oxidation of Aluminum bearing III V Semiconductors with Applications to Edge and Surface emitting Lasers and to the Stabilization of Light Emitting Diodes written by Timothy Allen Richard and published by . This book was released on 1995 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, a water vapor oxidation process is used to convert high Al composition $rm Alsb{x}Gasb{1-x}As$ to a stable native oxide. The native oxides described are formed at temperatures in the range of 400$rmspcirc C$ to 500$rmspcirc C.$ Some of the basic properties of the native oxide are described. These properties include the insulating and diffusion masking nature of the oxide as well as the anisotropic behavior of the oxidation process. The high quality native oxide is then applied to laser devices in the $rm Alsb{x}Gasb{1-x}$As-GaAs and $rm Alsb{y}Gasb{1 -y}$As-GaAs-In$rmsb{x}Gasb{1-x}As$ material systems and to the stabilization of $rm Alsb{y}Gasb{1-y}As$-$rm Insb{0.5}(Alsb{x}Gasb{1-x})sb{0.5}P$ light emitting diodes. Data are presented on a high-performance native-oxide coupled-stripe $rm Alsb{y}Gasb{1-y}As$-GaAs-In$rmsb{x}Gasb{1-x}As$ quantum well heterostructure laser array realized by the "wet" oxidation of the upper $rm Alsb{y}Gasb{1-y}As$ confining layer for current definition. Also, data are presented on the (300 K and 77 K) continuous photopumped laser operation of oxide-embedded $rm Alsb{y}Gasb{1-y}As$-GaAs-In$rmsb{x}Gasb{1-x}As$ quantum-well heterostructures. The active region is sandwiched within native-oxide-semiconductor stacks. The native-oxide layers are formed after crystal growth by selectively oxidizing along high Al-composition heterolayers. The active region is shown to remain intact without any significant degradation in laser performance. The oxide-embedded laser structure is optimized for vertical-cavity laser operation utilizing large-index-step high-contrast distributed Bragg reflector mirrors formed by the selective lateral oxidation process. Edge- and vertical-cavity photopumped operations of devices with short period upper and lower mirrors are demonstrated. The vertical-cavity lasers also exhibit "hot"-carrier recombination. Finally, data are presented on the electrical behavior and the reliabillty of post-fabrication native-oxide-passivated visible-spectrum AlGaAs-In(AlGa)P p-n heterostructure light emitting diodes (LEDs). The LEDs are oxidized after metallization, thus sealing all of the exposed AlGaAs crystal at cracks, fissures, and edges against atmospheric hydrolysis without degrading their light-output characteristics. The current-voltage (I-V) characteristics of the oxide-passivated LEDs are shown to exhibit normal p-n diode behavior. Above all, the reliability of the oxidized devices in high-humidity conditions is greatly improved compared to those of otherwise identical unoxidized LEDs.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2000 with total page 846 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1996 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Nanophotonics written by Michael Kneissl and published by Springer Nature. This book was released on 2020-03-10 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Download or read book Native Oxides on Aluminum bearing III V Semiconductors with Applications to Single mode Behavior Bistability and Switching written by Nada Abdullatif El-Zein and published by . This book was released on 1995 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$spcirc$C to 450$spcirc$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction. Device-quality insulating oxides are demonstrated in the $rm Alsb{x}Gasb{1-x}$As-GaAs and $rm Alsb{y}Gasb{1-y}$As-GaAs-$rm Insb{x}Gasb{1-x}As$ systems and are employed for current confinement in stripe-geometry gain guided laser diodes. The insulating properties and low refractive index (n $sim$ 1.6) of AlGaAs native oxide are employed to fabricate single-longitudinal-mode planar native-oxide AlGaAs-GaAs quantum well heterostructure (QWH) laser diodes. This is done by patterning the stripes into a linear array. Data are also presented on the use of the native oxide to obtain switching and bistability with large hysteresis when fabricating laser diodes. Three-terminal bistable devices are examined. Finally, data are presented on the wavelength selectivity of the native oxide bistable devices.

Download or read book Selective Oxidation Technology and Its Applications Toward Electronic and Optoelectronic Devices written by and published by . This book was released on 1999 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selective oxidation of AlGaAs compounds has facilitated dramatic improvements in the performance of near IR VCSELS. Under the auspices of this proposal we have: (1) expanded our understanding of both the strengths and the limitations of this technology; (2) explored its applicability to other Al bearing materials; (3) utilized this technology base to demonstrate a variety of new electronic and optoelectronic devices; and (4) established the reliability and manufacturability of oxidized devices such as VCSELS. Specifically, we have investigated conditions required to maximize control of the oxidation process as well as those required to facilitate inhibit etching of the resultant oxide. Concurrently, studies were performed to extend the technology to other Al-bearing compounds such as Al(Ga)AsSb, InAl(Ga)P and Al(Ga)N. Several new devices utilizing the selective oxidation technology of AlGaAs, as well as Al(Ga)AsSb were be considered. On a separate front, we also explored the possibility of using oxidized AlGaAs and InAl(Ga)P to form GaAs/AIGaAs FETs. Finally, reliability and manufacturability issues of the high performance VCSELS fabricated using selective oxidation technology, were addressed.

Download or read book Native Oxides on Aluminum Bearing Iii V Semiconductors With Applications to High Performance Laser Diodes written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Use of Aluminum Bearing III V Semiconductor Native Oxides for Optical and Current Confinement in Waveguides and Lasers written by Stephen Joseph Caracci and published by . This book was released on 1993 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented on various laser and optical devices that utilize native oxidation of Al bearing III-V semiconductors to effect large lateral index steps. These large index steps are due to the low refractive index of the Al bearing native oxide (n $sim$ 1.5), making possible the fabrication of high-quality optical waveguides. To process epitaxial III-V crystals at higher resolution (e.g., laser devices with small output apertures and lower threshold currents), it is often desirable to shrink the thickness of the upper confining layer (UCL). The effect of thin upper confining layers on laser performance is studied by reducing the thickness to 0.2, 0.3, 0.45, and 0.6 $mu$m. Data presented show that device performance is not significantly degraded until the UCL thickness is reduced $sim$0.2 $mu$m. Planar native-oxide index-guided lasers with high-performance operation are described. These lasers use a relatively thick native oxide to form a lateral waveguide with an effective index step of $rmDelta n sim 5times10sp{-3}.$ Index-guided devices, as opposed to gain-guided devices, exhibit improved output beam quality, lower threshold current, and narrower spectra. With even larger lateral index steps it is possible to "steer" photons. To investigate very large index steps formed from native oxides, three types of devices are used: planar native-oxide defined waveguides, "teardrop"-shaped lasers and ring lasers. Data presented on native-oxide defined S-bend waveguides indicate extremely low optical losses are achieved even for "tight" bending. Further data on half- and full-ring lasers demonstrate that the radiation losses due to bending are low enough to still have high output power and low threshold current laser operation. It is even possible to select the polarization of the emitted light due to asymmetric losses for TE and TM light. This is accomplished by using a "teardrop"-shaped resonator consisting of a single output stub which is split into a y-section that is then closed with a half ring. Laser devices using this geometry exhibit TM polarized output light with low threshold currents and high output powers.

Download or read book Native Oxides on Aluminum bearing III V Semiconductors written by Alan Richard Sugg and published by . This book was released on 1993 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Native Oxides on Aluminum bearing III V Semiconductors with Applications to High Performance Laser Diodes written by Frederick Anthony Kish and published by . This book was released on 1992 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxidation of Intermetallics written by Hans Jürgen Grabke and published by John Wiley & Sons. This book was released on 2008-07-11 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last ten years vast efforts were made in the research and development of intermetallic compounds to attain improved high temperature strength and low temperature ductility. These new structural materials are used in several high-temperature applications like engines and turbines. Oxidation and corrosion resistance are as important for the current applications of these materials as mechanical properties. This book gives a sound review of the present knowledge of the oxidation kinetics and mechanisms of intermetallics. Especially Ti-, Ni- and Fe-aluminides are treated in detail by experts from Europe, USA and Japan. The information provided will be of wealth for any engineer and scientist- materials scientist, physicist or chemist - involved in the development of new intermetallic materials and their applications.