Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.

Download or read book The Physics and Applications of Resonant Tunnelling Diodes written by Hiroshi Mizuta and published by Cambridge University Press. This book was released on 1995-09-14 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive description of the physics and applications of resonant tunnelling diodes.

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Download or read book High Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Download or read book Fundamentals of Terahertz Devices and Applications written by Dimitris Pavlidis and published by John Wiley & Sons. This book was released on 2021-08-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: An authoritative and comprehensive guide to the devices and applications of Terahertz technology Terahertz (THz) technology relates to applications that span in frequency from a few hundred GHz to more than 1000 GHz. Fundamentals of Terahertz Devices and Applications offers a comprehensive review of the devices and applications of Terahertz technology. With contributions from a range of experts on the topic, this book contains in a single volume an inclusive review of THz devices for signal generation, detection and treatment. Fundamentals of Terahertz Devices and Applications offers an exploration and addresses key categories and aspects of Terahertz Technology such as: sources, detectors, transmission, electronic considerations and applications, optical (photonic) considerations and applications. Worked examplesbased on the contributors extensive experience highlight the chapter material presented. The text is designed for use by novices and professionals who want a better understanding of device operation and use, and is suitable for instructional purposes This important book: Offers the most relevant up-to-date research information and insight into the future developments in the technology Addresses a wide-range of categories and aspects of Terahertz technology Includes material to support courses on Terahertz Technology and more Contains illustrative worked examples Written for researchers, students, and professional engineers, Fundamentals of Terahertz Devices and Applications offers an in-depth exploration of the topic that is designed for both novices and professionals and can be adopted for instructional purposes.

Download or read book Resonant Tunneling Diode Photonics written by Charlie Ironside and published by . This book was released on 2019-11-05 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together two broad themes that have generated a great deal of interested and excitement in the scientific and technical community in the last 100 years or so: quantum tunnelling and nonlinear dynamical systems. It applies these themes to nanostructured solid state heterostructures operating at room temperature to gain insight into novel photonic devices, systems and applications.

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Download or read book Quantum Heterostructures written by Vladimir Vasilʹevich Mitin and published by Cambridge University Press. This book was released on 1999-07-13 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Download or read book Plasmonic Catalysis written by Pedro H.C. Camargo and published by John Wiley & Sons. This book was released on 2021-06-21 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explore this comprehensive discussion of the foundational and advanced topics in plasmonic catalysis from two leaders in the field Plasmonic Catalysis: From Fundamentals to Applications delivers a thorough treatment of plasmonic catalysis, from its theoretical foundations to myriad applications in industry and academia. In addition to the fundamentals, the book covers the theory, properties, synthesis, and various reaction types of plasmonic catalysis. It also covers its applications in reactions including oxidation, reduction, nitrogen fixation, CO2 reduction, and more. The book characterizes plasmonic catalytic systems and describes their properties, tackling the integration of conventional methods as well as new methods able to unravel the optical, electronic, and chemical properties of these systems. It also describes the fundamentals of controlled synthesis of metal nanoparticles relevant to plasmonic catalysis, as well as practical examples thereof. Plasmonic Catalysis covers a wide variety of other practical topics in the field, including hydrogenation reactions and the harvesting of LSPR-excited charge carriers. Readers will also benefit from the inclusion of: A thorough introduction to plasmonic catalysis, a theory of plasmons for catalysis and mechanisms, as well as optical properties of plasmonic-catalytic nanostructures An exploration of the synthesis of plasmonic nanoparticles for photo and electro catalysis, as well as plasmonic catalysis towards oxidation reactions and hydrogenation reactions Discussions of plasmonic catalysis for multi-electron processes and artificial photosynthesis and N2 fixation An examination of control over reaction selectivity in plasmonic catalysis Perfect for catalytic chemists, materials scientists, photochemists, and physical chemists, Plasmonic Catalysis: From Fundamentals to Applications will also earn a place in the libraries of physicists who seek a one-stop resource to enhance their understanding of applications in plasmonic catalysis.

Download or read book High Speed Heterostructure Devices written by and published by Academic Press. This book was released on 1994-07-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices

Download or read book Semiconductor Spintronics and Quantum Computation written by D.D. Awschalom and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.

Download or read book Advanced Semiconductor Heterostructures written by Mitra Dutta and published by World Scientific. This book was released on 2003 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Novel heterostructure devices. Electron-phonon interactions in intersubband laser heterostructures / M.V. Kisin, M. Dutta, and M.A. Stroscio -- Quantum dot infrared detectors and sources / P. Bhattacharya ... [et al.] -- Generation of terahertz emission based on intersubband transitions / Q. Hu -- Mid-infrared GaSb-based lasers with Type-I heterointerfaces / D.V. Donetsky, R.U. Martinelli, and G.L. Belenky -- Advances in quantum-dot research and technology: the path to applications in biology / M.A. Stroscio and M. Dutta -- Potential device applications and basic properties. High-field electron transport controlled by optical phonon emission in nitrides / S.M. Komirenko ... [et al.] -- Cooling by inverse Nottingham effect with resonant tunneling / Y. Yu, R.F. Greene, and R. Tsu -- The physics of single electron transistors / M.A. Kastner -- Carrier capture and transport within tunnel injection lasers: a quantum transport analysis / L.F. Register ... [et al.] -- The influence of environmental effects on the acoustic phonon spectra in quantum-dot heterostructures / S. Rufo, M. Dutta, and M.A. Stroscio -- Quantum devices with multipole-electrode - heterojunctions hybrid structures / R. Tsu.

Download or read book Resonant Tunneling Diode Photonics written by Charlie Ironside and published by Morgan & Claypool Publishers. This book was released on 2019-11-11 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together two broad themes that have generated a great deal of interest and excitement in the scientific and technical community in the last 100 years or so: quantum tunnelling and nonlinear dynamical systems. It applies these themes to nanostructured solid state heterostructures operating at room temperature to gain insight into novel photonic devices, systems and applications.

Download or read book Theory of Modern Electronic Semiconductor Devices written by Kevin F. Brennan and published by Wiley-Interscience. This book was released on 2002-03-07 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature. Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include: * Heterostructure field effect transistors * Bipolar and CMOS transistors * Resonant tunneling diodes * Real space transfer transistors * Quantum dot cellular automata * Single electron transistors The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.

Download or read book Resonant Tunneling in III V Semiconductor Heterostructures written by Ravindra Manohar Kapre and published by . This book was released on 1991 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Semiconductor Heterostructures Novel Devices Potential Device Applications And Basic Properties written by Michael A Stroscio and published by World Scientific. This book was released on 2003-09-12 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.