Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.

Download or read book Analog IC Reliability in Nanometer CMOS written by Elie Maricau and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.

Download or read book Reliable Software for Unreliable Hardware written by Semeen Rehman and published by Springer. This book was released on 2016-04-20 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes novel software concepts to increase reliability under user-defined constraints. The authors’ approach bridges, for the first time, the reliability gap between hardware and software. Readers will learn how to achieve increased soft error resilience on unreliable hardware, while exploiting the inherent error masking characteristics and error (stemming from soft errors, aging, and process variations) mitigations potential at different software layers.

Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2019-05-16 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: A revised guide to the theory and implementation of CMOS analog and digital IC design The fourth edition of CMOS: Circuit Design, Layout, and Simulation is an updated guide to the practical design of both analog and digital integrated circuits. The author—a noted expert on the topic—offers a contemporary review of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and switching power supplies. CMOS includes discussions that detail the trade-offs and considerations when designing at the transistor-level. The companion website contains numerous examples for many computer-aided design (CAD) tools. Using the website enables readers to recreate, modify, or simulate the design examples presented throughout the book. In addition, the author includes hundreds of end-of-chapter problems to enhance understanding of the content presented. This newly revised edition: • Provides in-depth coverage of both analog and digital transistor-level design techniques • Discusses the design of phase- and delay-locked loops, mixed-signal circuits, data converters, and circuit noise • Explores real-world process parameters, design rules, and layout examples • Contains a new chapter on Power Electronics Written for students in electrical and computer engineering and professionals in the field, the fourth edition of CMOS: Circuit Design, Layout, and Simulation is a practical guide to understanding analog and digital transistor-level design theory and techniques.

Download or read book Reliability Prediction for Microelectronics written by Joseph B. Bernstein and published by John Wiley & Sons. This book was released on 2024-02-20 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: RELIABILITY PREDICTION FOR MICROELECTRONICS Wiley Series in Quality & Reliability Engineering REVOLUTIONIZE YOUR APPROACH TO RELIABILITY ASSESSMENT WITH THIS GROUNDBREAKING BOOK Reliability evaluation is a critical aspect of engineering, without which safe performance within desired parameters over the lifespan of machines cannot be guaranteed. With microelectronics in particular, the challenges to evaluating reliability are considerable, and statistical methods for creating microelectronic reliability standards are complex. With nano-scale microelectronic devices increasingly prominent in modern life, it has never been more important to understand the tools available to evaluate reliability. Reliability Prediction for Microelectronics meets this need with a cluster of tools built around principles of reliability physics and the concept of remaining useful life (RUL). It takes as its core subject the ‘physics of failure’, combining a thorough understanding of conventional approaches to reliability evaluation with a keen knowledge of their blind spots. It equips engineers and researchers with the capacity to overcome decades of errant reliability physics and place their work on a sound engineering footing. Reliability Prediction for Microelectronics readers will also find: Focus on the tools required to perform reliability assessments in real operating conditions Detailed discussion of topics including failure foundation, reliability testing, acceleration factor calculation, and more New multi-physics of failure on DSM technologies, including TDDB, EM, HCI, and BTI Reliability Prediction for Microelectronics is ideal for reliability and quality engineers, design engineers, and advanced engineering students looking to understand this crucial area of product design and testing.

Download or read book NAND Flash Memory Technologies written by Seiichi Aritome and published by John Wiley & Sons. This book was released on 2015-12-01 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-25 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Download or read book China Semiconductor Technology International Conference 2010 CSTIC 2010 written by Han-Ming Wu and published by The Electrochemical Society. This book was released on 2010-03 with total page 1203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.

Download or read book Reliability of high k metal gate field effect transistors considering circuit operational constraints written by Steve Kupke and published by BoD – Books on Demand. This book was released on 2016-06-06 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric breakdown was studied and compared to the standard assessment methods. Different wear-out mechanisms for drain-only and alternating gate and drain stress were verified. Under drain-only stress, the dielectric breakdown was caused by hot carrier degradation. The lifetime was correlated with the device length and amount of subthreshold leakage. The gate oxide breakdown under alternating gate and o-state stress was caused by the continuous trapping and detrapping behaviour of high-k metal gate devices.

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book From Frequency to Time Average Frequency written by Liming Xiu and published by John Wiley & Sons. This book was released on 2015-05-18 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a simple, easy to understand style, this book will teach PLL users how to use new clock technology in their work in order to create innovative applications. Investigates the clock frequency concept from a different perspective--at an application level Teaches engineers to use this new clocking technology to create innovations in chip/system level, through real examples extracted from commercial products

Download or read book Understanding Delta Sigma Data Converters written by Shanthi Pavan and published by John Wiley & Sons. This book was released on 2017-01-24 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new edition introduces operation and design techniques for Sigma-Delta converters in physical and conceptual terms, and includes chapters which explore developments in the field over the last decade Includes information on MASH architectures, digital-to-analog converter (DAC) mismatch and mismatch shaping Investigates new topics including continuous-time ΔΣ analog-to-digital converters (ADCs) principles and designs, circuit design for both continuous-time and discrete-time ΔΣ ADCs, decimation and interpolation filters, and incremental ADCs Provides emphasis on practical design issues for industry professionals

Download or read book Electrical Electronics and Digital Hardware Essentials for Scientists and Engineers written by Ed Lipiansky and published by John Wiley & Sons. This book was released on 2012-11-07 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical guide for solving real-world circuit board problems Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers arms engineers with the tools they need to test, evaluate, and solve circuit board problems. It explores a wide range of circuit analysis topics, supplementing the material with detailed circuit examples and extensive illustrations. The pros and cons of various methods of analysis, fundamental applications of electronic hardware, and issues in logic design are also thoroughly examined. The author draws on more than twenty-five years of experience in Silicon Valley to present a plethora of troubleshooting techniques readers can use in real-life situations. Plus, he devotes an entire chapter to the design of a small CPU, including all critical elements—the complete machine instruction set, from its execution path to logic implementation and timing analysis, along with power decoupling, resets, and clock considerations. Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers covers: Resistors, inductors, and capacitors as well as a variety of analytical methods The elements of magnetism—an often overlooked topic in similar books Time domain and frequency analyses of circuit behavior Numerous electronics, from operational amplifiers to MOSFET transistors Both basic and advanced logic design principles and techniques This remarkable, highly practical book is a must-have resource for solid state circuit engineers, semiconductor designers and engineers, electric circuit testing engineers, and anyone dealing with everyday circuit analysis problems. A solutions manual is available to instructors. Please email [email protected] to request the solutions manual. An errata sheet is available.

Download or read book Enhanced Phase Locked Loop Structures for Power and Energy Applications written by Masoud Karimi-Ghartema and published by John Wiley & Sons. This book was released on 2014-03-21 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Filling the gap in the market dedicated to PLL structures for power systems Internationally recognized expert Dr. Masoud Karimi-Ghartemani brings over twenty years of experience working with PLL structures to Enhanced Phase-Locked Loop Structures for Power and Energy Applications, the only book on the market specifically dedicated to PLL architectures as they apply to power engineering. As technology has grown and spread to new devices, PLL has increased in significance for power systems and the devices that connect with the power grid. This book discusses the PLL structures that are directly applicable to power systems using simple language, making it easily digestible for a wide audience of engineers, technicians, and graduate students. Enhanced phase-locked loop (EPLL) has become the most widely utilized architecture over the past decade, and many books lack explanation of the structural differences between PLL and EPLL. This book discusses those differences and also provides detailed instructions on using EPLL for both single-phase applications and three-phase applications. The book’s major topics include: A basic look at PLL and its standard structure A full explanation of EPLL EPLL extensions and modifications Digital implementation of EPLL Extensions of EPLL to three-phase structures Dr. Karimi-Ghartemani provides basic analysis that helps readers understand each of the structures presented without requiring complicated mathematical proofs. His book is filled with illustrated examples and simulations that connect theory to the real world, making Enhanced Phase-Locked Loop Structures for Power and Energy Applications an ideal reference for anyone working with inverters, rectifiers, and related technologies.

Download or read book Electromigration Modeling at Circuit Layout Level written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2013-03-16 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.