Download or read book Reliability of GaN High Electron Mobility Transistors on Silicon Substrates written by Sefa Demirtas and published by . This book was released on 2009 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment of these transistors in a wide scale. In this study, we have investigated the reliability of GaN HEMTs grown on Si substrates. The large lattice and thermal mismatch between GaN and Si adds an additional reliability concern as compared to conventional substrates such as SiC and sapphire. We have performed systematic electrical stress experiments to understand the physics of degradation in these devices. Relevant device parameters are recorded continuously during these stress tests by a benign characterization suite. We conclude from these experiments that high voltage stress conditions are more effective in degrading the device than high current conditions. High voltage stress is found to impact the device in two different ways. The first is increased trapping in the large number of traps in the highly mismatched device structure even before any stress. The second is through the converse piezoelectric effect discussed by Joh et al. for GaN-on-SiC devices. We also have found evidence that these two mechanisms are connected. We have used UV illumination to enhance detrapping and shown that trapped electrons screen the electric field in the device and increase the critical voltage at which gate current degrades.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Reliability Assessment of GaN HEMTs on Si Substrate with Ultra short Gate Dedicated to Power Applications at Frequency Above 40 GHz written by Hadhemi Lakhdhar and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Ph.D. work focuses on the reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on silicon substrate dedicated to power applications at frequency above 40GHz. It was carried out within IMS Bordeaux and IEMN Lille laboratories.This work initially compares AlGaN/GaN HEMTs grown by MOCVD with those grown using MBE, through electrical characterization.In particular, the device geometry impact on the device performances has been studies by static electrical characterization.Step-stress experiments are performed to investigate reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate. A methodology based on a sequence of step stress tests has been defined for in-situ diagnosis of a permanent degradation and of a degradation which is identified by a drain current transient occurring during each step of the ageing sequence . The same stress conditions were applied on HEMTs with different geometries. It is found no evolution of the drain current during non stressful steps. The value of the critical degradation voltage beyond which the stress drain current starts to decrease significantly is also found dependent on the stress bias conditions, the gate-drain distance and the gate length. Moreover, the safe operating area of this technology has been determined.

Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-22 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Download or read book Reliability Studies of GaN High Electron Mobility Transistors written by Markus Cäsar and published by . This book was released on 2015-06-29 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book InAlN AlGaN GaN High Electron Mobility Transistors on Si Substrates written by Konstantinos Floros and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book AlGaN GaN High Electron Mobility Transistors on Silicon Substrate for RF microwave Applications written by Shuo Jia and published by . This book was released on 2005 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability and Failure Analysis of GaN on Si Power Devices written by Wen Yang and published by . This book was released on 2021 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap power semiconductor devices, especially Gallium Nitride (GaN) high electron mobility transistors (HEMTs), have gained a lot of attention for high power applications due to their low on-resistance and high switching speed compared to their silicon counterparts. However, the reliability and failure issues related to dynamic performance, gate reliability, and electrostatic discharge have limited the wide applications of GaN power devices. This dissertation presents a systematic study of reliability and failure analysis of GaN-on-Si power devices. Firstly, the correlation between the physical trap mechanisms and the dynamic on-resistance (R[subscript on]) degradation has been investigated using a multi-frequency C-V measurement during pulse-mode stress. The experimental results indicate that the deep-level traps originated from the buffer layer play a dominant role in the dynamic R[subscript on] degradation. Secondly, the Si substrate in GaN-on-Si lateral power devices can be used as an independent contact termination rather than a thermal cooling pad. Therefore, the substrate bias effect in dynamic R[subscript on] and Gate Charge (Q[subscript g]) is necessary to explore both conduction and switching loss in GaN-based converter. A reverse dual polarity (RDP) substrate pulse technique has been developed to mitigate the dynamic R[subscript on] degradation. Thirdly, the gate reliability issues, including Time-dependent dielectric breakdown (TDDB), and Bias Temperature Instability (BTI) have been explored to improve the current capability. The physical model of TDDB in GaN power devices has been established by applying the substrate biases. And three phases of threshold voltage degradation have been presented under Negative Bias Temperature Instability stress. Lastly, the ESD characteristics of GaN power devices are considered for the development of a monolithic GaN-on-Si platform. The breakdown mechanisms under ESD stress have been comprehensively studied using Transmission Line Pulse (TLP) and Very-fast Transmission Line Pulse (VFTLP) measurements.

Download or read book Electrical and Electronic Devices Circuits and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Download or read book Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN GaN High Electron Mobility Transistors written by Monta Raymond Holzworth (Jr) and published by . This book was released on 2013 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN high electron mobility transistors are unique for their combination of high temperature, high power, and high frequency applications. Compared to Si, Ge, and compound semiconductors such as GaAS and InP, AlGaN/GaN transistors outclass the current technology due to their superior combination of high breakdown voltage and high frequency performance. These characteristics arise from structural and electrical properties inherent to the AlGaN/GaN heterojunction which have enabled AlGaN/GaN transistors usage in important military and civilian applications such as microwave and millimeter technology, RADAR systems, and as high current and voltage switches in utility grid systems. As the technology continues to improve due to increased materials quality and device advancements, future applications will require AlGaN/GaN transistor usage under even higher voltages and temperatures. Therefore, the effects of these stresses need to be investigated in order improve device performance and reliability.

Download or read book Reliability and Degradation Mechanisms of GaN High Electron Mobility Transistors with Short Gate Length written by Tobias Kemmer and published by . This book was released on 2021* with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of AlGaN GaN High Electron Mobility Transistors HEMTs on Diamond Substrates written by and published by . This book was released on 2006 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high power and high frequency operation. A new generation of high speed 6 high frequency devices is required to meet current and future military needs. The Gallium Nitride High Electron Mobility Transistor (HEMT) is showing great promise as the enabling technology in the development of military radar systems, electronic surveillance systems, communications systems and high voltage power systems. Typically, sapphire or silicon carbide is utilized as the substrate material in most HEMT designs. This thesis explores the possibility of utilizing a diamond substrate to increase the power handling capability of the AlGaN/GaN HEMT. Diamond offers increased thermal property parameters that can be simulated in the commercially available Silvaco software package. A complete electrical and thermal analysis of the model was conducted and compared to actual device characteristics. The results of the software simulation and measurements on the test devices indicate diamond substrates will enable the HEMT to be operated at a higher power than traditional sapphire substrate HEMTS.

Download or read book Dielectric Reliability in GaN Metal insulator semiconductor High Electron Mobility Transistors written by Ethan S. Lee and published by . This book was released on 2018 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Metal Insulator Semiconductor High Electron Mobility Transistors (GaN MIS-HEMTs) show excellent promise as high voltage power transistors that can operate efficiently at high temperatures and frequencies. However, current GaN technology faces several obstacles, one of which is Time-Dependent Dielectric Breakdown (TDDB) of the gate dielectric. Under prolonged electrical stress, the gate dielectric suffers a catastrophic breakdown that renders the transistor useless. Understanding the physics behind gate dielectric breakdown and accurately estimating the average time to failure of the dielectric are of critical importance. TDDB is conventionally studied under DC conditions. However, as actual device operation in power circuits involves rapid switching between on and off states, it is important to determine if estimations done from DC stress results are accurate. Due to the rich dynamics of the GaN MIS-HEMT system such as electron trapping and carrier accumulation at the dielectric/AlGaN interface, unaccounted physics might be introduced under AC stress that may cause error in DC estimation. To this end, we characterize TDDB behavior of GaN MIS-HEMTs at both DC stress conditions and more accurate AC stress conditions. We find that TDDB behavior is improved for AC stress compared to DC stress conditions at high stress frequencies. At 100 kHz, the average dielectric breakdown time is twice the average dielectric breakdown time under DC stress conditions. Furthermore, the impact of tensile mechanical stress on TDDB under DC stress is investigated. This is an important concern because of the piezoelectric nature of GaN and the substantial lattice mismatch between Si, GaN and AlGaN that results in high mechanical strain in the active portion of the device. If mechanical stress significantly impacts TDDB, designers will have to work with further constraints to ensure minimal stress across the dielectric. To address this, we have carried out measurements of TDDB under [epsilon] = 0.29% tensile strain. We find that TDDB in both the On-state and Off-state stress conditions are unaffected by this mechanical stress. Through measurements done in this thesis, we gather further insight towards understanding the physics behind TDDB. Through AC stress we find that the dynamics of the GaN MIS-HEMTs prolong dielectric breakdown times. Through mechanical stress we find that modulation of the 2-Dimensional Electron Gas and dielectric bond straining have minimal impact on TDDB.