Download or read book Reactive Ion Etching of SiO2 Using CHF3 CO2 Gas Mixture written by Anthony Hyunwoo Chung and published by . This book was released on 1997 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reactive Ion Etching of Si SiO2 by CHF3 CH4 O2 Gas Mixture written by Usha Raghuram and published by . This book was released on 1993 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Download or read book Statistical Experiment Design of the Reactive Ion Etching of Silicon and Silicon Dioxide with C2F6 CHF3 Plasmas written by Michael Paul Splichal and published by . This book was released on 1990 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Interaction of Ions with Condensed Matter written by Arvaidas Galdikas and published by Nova Publishers. This book was released on 2000 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interactions of Ions with Condensed Matter, Volume 229
Download or read book Reactive Ion Etching of PECVD Silicon Dioxide SiO2 Layer for MEMS Application written by and published by . This book was released on 2004 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reactive ion etching (RIE) process has been developed to etch up to 1-micrometer (1 m) layer of low stress SiO2 (Silicon Dioxide) Plasma Enhanced Chemical Vapor Deposition (PECVD) film compatible for MEMS research applications. Etch rates from as low as 123 nm/min at 100 W to as high as 721 nm/min at 900 W powers were demonstrated using fluorocarbon (CF4) reactive gas plasma. RIE selectivity (SiO2/PR-Photoresist was 3:1 at 900W. The measured thickness variation was 0.13 m on 4-inch substrate for 1 m thick SiO2 film.
Download or read book Study of SiO2 to Si Etching Selectivity in High Density Low Pressure Fluorocarbon Plasmas written by Karen Hildegard Ralston Kirmse and published by . This book was released on 1996 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanomechanics in van der Waals Heterostructures written by Matthew Holwill and published by Springer. This book was released on 2019-05-04 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro/nano-mechanical systems are a crucial part of the modern world providing a plethora of sensing and actuation functionalities used in everything from the largest cargo ships to the smallest hand-held electronics; from the most advanced scientific and medical equipment to the simplest household items. Over the past few decades, the processes used to produce these devices have improved, supporting dramatic reductions in size, but there are fundamental limits to this trend that require a new production paradigm. The 2004 discovery of graphene ushered in a new era of condensed matter physics research, that of two-dimensional materials. Being only a few atomic layers thick, this new class of materials exhibit unprecedented mechanical strength and flexibility and can couple to electric, magnetic and optical signals. Additionally, they can be combined to form van der Waals heterostructures in an almost limitless number of ways. They are thus ideal candidates to reduce the size and extend the capabilities of traditional micro/nano-mechanical systems and are poised to redefine the technological sphere. This thesis attempts to develop the framework and protocols required to produce and characterise micro/nano-mechanical devices made from two-dimensional materials. Graphene and its insulating analogue, hexagonal boron nitride, are the most widely studied materials and their heterostructures are used as the test-bed for potential device architectures and capabilities. Interlayer friction, electro-mechanical actuation and surface reconstruction are some of the key phenomena investigated in this work.
Download or read book Diffusion and Defect Data written by and published by . This book was released on 1996 with total page 990 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride Chemical Reactions written by Raymond C. Sangster and published by Springer. This book was released on 1995-10-31 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Processing and Laser Assisted Chemistry written by E. Fogarassy and published by Elsevier. This book was released on 1990-12-01 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.
Download or read book Silicon Carbide III nitrides and Related Materials written by Gerhard Pensl and published by . This book was released on 1998 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Manufacturing Techniques for Microfabrication and Nanotechnology written by Marc J. Madou and published by CRC Press. This book was released on 2011-06-13 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt: Designed for science and engineering students, this text focuses on emerging trends in processes for fabricating MEMS and NEMS devices. The book reviews different forms of lithography, subtractive material removal processes, and additive technologies. Both top-down and bottom-up fabrication processes are exhaustively covered and the merits of the different approaches are compared. Students can use this color volume as a guide to help establish the appropriate fabrication technique for any type of micro- or nano-machine.
Download or read book Planar Processing Primer written by G. Anner and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: Planar Processing Primer is based on lecture notes for a silicon planar process ing lecture/lab course offered at the University of Illinois-UC for over fifteen years. Directed primarily to electrical engineering upperclassmen and graduate students, the material also has been used successfully by graduate students in physics and ceramic and metallurgical engineering. It is suitable for self-study by engineers trained in other disciplines who are beginning work in the semiconductor fields, and it can make circuit design engineers aware of the processing limitations under which they must work. The text describes and explains, at an introductory level, the principal processing steps used to convert raw silicon into a semiconductor device or integrated circuit. First-order models are used for theoretical treatments (e.g., of diffusion and ion implantation), with reference made to more advanced treatments, to computer programs such as SUPREM that include higher order effects, and to interactions among sequential processes. In Chapters 8, 9, and to, the application of silicon processes to compound semiconductors is discussed briefly. Over the past several years, the size of transistors has decreased markedly, allowing more transistors per chip unit area, and chip size has increased.
Download or read book Fundamentals of Microfabrication written by Marc J. Madou and published by CRC Press. This book was released on 2018-10-08 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMS technology and applications have grown at a tremendous pace, while structural dimensions have grown smaller and smaller, reaching down even to the molecular level. With this movement have come new types of applications and rapid advances in the technologies and techniques needed to fabricate the increasingly miniature devices that are literally changing our world. A bestseller in its first edition, Fundamentals of Microfabrication, Second Edition reflects the many developments in methods, materials, and applications that have emerged recently. Renowned author Marc Madou has added exercise sets to each chapter, thus answering the need for a textbook in this field. Fundamentals of Microfabrication, Second Edition offers unique, in-depth coverage of the science of miniaturization, its methods, and materials. From the fundamentals of lithography through bonding and packaging to quantum structures and molecular engineering, it provides the background, tools, and directions you need to confidently choose fabrication methods and materials for a particular miniaturization problem. New in the Second Edition Revised chapters that reflect the many recent advances in the field Updated and enhanced discussions of topics including DNA arrays, microfluidics, micromolding techniques, and nanotechnology In-depth coverage of bio-MEMs, RF-MEMs, high-temperature, and optical MEMs. Many more links to the Web Problem sets in each chapter
Download or read book Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases written by J. Sugiura and published by . This book was released on 1985 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2 has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of RF power, pressure, and O2 concentration on etch rate in CF4 + O2, SF6 + H6, and Ar gases has been investigated. RIE mechanisms were studied using in-situ monitoring of excited fluorine emission intensity and DC self bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220 A/min., 600 A/min., and 375 A/min. in CF4 + 4% O2, 8850 A/min., 500 A/min., and 560 A/min. in SF6 + 50% He, and 340 A/min., 280 A/min., and 270 A/min. in Ar, respectively, at P = 200 Watts, p = 20mTorr, and 300K. Under these conditions the DC self bias levels are -396 volts for CF4 + 4% O2, -350 volts for SF6 + 50% He, and -414 volts for Ar. In both CF4 + 4% O2 and SF6 + 50% He, the etch rates of Si, SiO2, and SiC all increase monotonously with the RF power.
Download or read book Process Induced Particulate Generation and Deposition During Reactive Ion Etching of SiO2 written by Paul James Resnick and published by . This book was released on 1991 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
